PartNumber | IPI65R190C6 | IPI65R110CFDXKSA1 | IPI65R150CFDXKSA1 |
Description | MOSFET N-Ch 700V 20.2A I2PAK-3 CoolMOS C6 | MOSFET N-CH 650V 31.2A TO262 | RF Bipolar Transistors MOSFET N-Ch 700V 72A I2PAK-3 |
Manufacturer | Infineon | - | Infineon Technologies |
Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | Through Hole | - | - |
Package / Case | TO-262-3 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 700 V | - | - |
Id Continuous Drain Current | 20.2 A | - | - |
Rds On Drain Source Resistance | 190 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 73 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 151 W | - | - |
Configuration | Single | - | - |
Tradename | CoolMOS | - | CoolMOS |
Packaging | Tube | - | Tube |
Height | 9.45 mm | - | - |
Length | 10.2 mm | - | - |
Series | CoolMOS C6 | - | IPI65R150 |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Width | 4.5 mm | - | - |
Brand | Infineon Technologies | - | - |
Fall Time | 10 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 12 ns | - | - |
Factory Pack Quantity | 500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 133 nS | - | - |
Part # Aliases | IPI65R190C6XKSA1 IPI65R19C6XK SP000863900 | - | - |
Unit Weight | 0.084199 oz | - | 0.073511 oz |
Part Aliases | - | - | IPI65R150CFD IPI65R150CFDXK SP000907028 |
Package Case | - | - | TO-262-3 |
Id Continuous Drain Current | - | - | 72 A |
Vds Drain Source Breakdown Voltage | - | - | 700 V |
Rds On Drain Source Resistance | - | - | 150 mOhms |