FDMC0310AS

Mfr. #:: FDMC0310AS
Manufacturer:: ON Semiconductor / Fairchild
Description:: MOSFET PT8 NCH 30V/20V S ML
Lifecycle:: New from this manufacturer.
Datasheet:: FDMC0310AS Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: Power-33-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Configuration:: Single

Tradename:: PowerTrench SyncFET

Packaging:: Reel

Height:: 0.8 mm

Length:: 3.3 mm

Series:: FDMC0310AS

Transistor Type:: 1 N-Channel

Width:: 3.3 mm

Brand:: ON Semiconductor / Fairchild

Product Type:: MOSFET

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Unit Weight:: 0.005832 oz

Tags: FDMC03, FDMC0, FDMC, FDM

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDMC0310AS Description

***emi: N-Channel PowerTrench® SyncFET™ 30V, 21A, 4.4mΩ

***r Electronics: Power Field-Effect Transistor, 19A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: The FDMC0310AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic schottky body diode.

*** Source Electronics: Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R / MOSFET N-CH 30V 19A PT8

*** Stop Electro: Power Field-Effect Transistor, 19A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: The FDMS0310AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.

***emi: N-Channel PowerTrench® MOSFET 30V, 18.8A, 4.2mΩ

***nell: MOSFET, N CH, 30V, 24A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

***ark: Mosfet Transistor, N Channel, 21 A, 30 V, 3.7 Mohm, 10 V, 5.4 V Rohs Compliant: Yes

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.7Milliohms;ID 21A;SO-8;PD 2.5W;VGS +/-20V

***ure Electronics: Single N-Channel 30 V 4.5 mOhm 45 nC HEXFET® Power Mosfet - SOIC-8

***nell: MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0037ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.4V; Power Dissipation P

*** Stop Electro: Power Field-Effect Transistor, 21A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ure Electronics: Single N-Channel 30 V 3.5 mOhm 20 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R / MOSFET N-CH 30V 21A 8-SOIC

***nell: MOSFET, N-CH 30V 21A SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0029ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 21A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.8V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 2.35V

***ure Electronics: Single N-Channel 30 V 3.9 mOhm 6.5 W Surface Mount Power Mosfet - SOIC-8

*** Source Electronics: MOSFET N-CH 30V 30.5A 8-SOIC / Trans MOSFET N-CH 30V 30.5A 8-Pin SOIC N T/R

***nell: MOSFET, N CH, 30V, 30.5A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:30.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:6.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-

***ure Electronics: N-Channel 30 V 3.6 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***ark: TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,21A I(D),SO

***et: Trans MOSFET N-CH 30V 21A 8-Pin SOIC N T/R

***ment14 APAC: MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Source Voltage Vds:30V; On Resistance Rds(on):0.0036ohm;

***rchild Semiconductor: The FDS6699S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6699S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.

***nell: MOSFET, N, SMD, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0036ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 2.5mW; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 21A; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 106A; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

Market price

Part #	Mfg.	Description	Stock	Price
FDMC0310AS-F127 DISTI # 31283679	ON Semiconductor	SINGLE PT8 NCH 30V/20V S IN ML	30000	18000:$0.3288 12000:$0.3429 6000:$0.3582 3000:$0.4000
FDMC0310AS DISTI # FDMC0310ASTR-ND	ON Semiconductor	MOSFET N-CH 30V 19A 8QFN RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.3118
FDMC0310AS-F127 DISTI # FDMC0310AS-F127CT-ND	ON Semiconductor	MOSFET N-CH 30V 20V 8QFN RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDMC0310AS-F127 DISTI # FDMC0310AS-F127DKR-ND	ON Semiconductor	MOSFET N-CH 30V 20V 8QFN RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDMC0310AS DISTI # FDMC0310ASCT-ND	ON Semiconductor	MOSFET N-CH 30V 19A 8QFN RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.3544 500:$0.4430 100:$0.5981 10:$0.7750 1:$0.8900
FDMC0310AS DISTI # FDMC0310ASDKR-ND	ON Semiconductor	MOSFET N-CH 30V 19A 8QFN RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.3544 500:$0.4430 100:$0.5981 10:$0.7750 1:$0.8900
FDMC0310AS DISTI # FDMC0310AS	ON Semiconductor	Trans MOSFET N-CH 30V 21A 8-Pin MLP T/R (Alt: FDMC0310AS) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0	3000:$0.3400 6000:$0.3269 9000:$0.3148 15000:$0.3036 30000:$0.2931 75000:$0.2833 150000:$0.2787
FDMC0310AS DISTI # FDMC0310AS	ON Semiconductor	Trans MOSFET N-CH 30V 21A 8-Pin MLP T/R (Alt: FDMC0310AS) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.3349 6000:€0.2739 12000:€0.2509 18000:€0.2319 30000:€0.2149
FDMC0310AS DISTI # FDMC0310AS	ON Semiconductor	Trans MOSFET N-CH 30V 21A 8-Pin MLP T/R - Tape and Reel (Alt: FDMC0310AS) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.3919 6000:$0.3889 12000:$0.3839 18000:$0.3789 30000:$0.3699
FDMC0310AS DISTI # FDMC0310AS	ON Semiconductor	Trans MOSFET N-CH 30V 21A 8-Pin MLP T/R - Bulk (Alt: FDMC0310AS) Min Qty: 893 Container: Bulk	Americas - 0
FDMC0310AS_F127 DISTI # FDMC0310AS-F127	ON Semiconductor	Trans MOSFET N-CH 30V 19A 8-Pin MLP T/R - Tape and Reel (Alt: FDMC0310AS-F127) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.3129 6000:$0.3109 12000:$0.3069 18000:$0.3029 30000:$0.2959
FDMC0310AS_F127 DISTI # FDMC0310AS-F127	ON Semiconductor	Trans MOSFET N-CH 30V 19A 8-Pin MLP T/R (Alt: FDMC0310AS-F127) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.4209 6000:€0.3279 12000:€0.2719 18000:€0.2289 30000:€0.2119
FDMC0310AS DISTI # 68X0362	ON Semiconductor	PT8 NCH 30V/20V S ML / REEL	0	24000:$0.2650 9000:$0.2750 1:$0.2840
FDMC0310AS-F127 DISTI # 48AC0980	ON Semiconductor	PT8 NCH 30V/20V S ML / REEL	0	1:$0.3680
FDMC0310AS	ON Semiconductor	Power Field-Effect Transistor, 19A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA RoHS: Compliant	9000	1000:$0.3700 500:$0.3900 100:$0.4000 25:$0.4200 1:$0.4500
FDMC0310AS	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 19A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA RoHS: Compliant	19150	1000:$0.3700 500:$0.3900 100:$0.4000 25:$0.4200 1:$0.4500
FDMC0310AS DISTI # 512-FDMC0310AS	ON Semiconductor	MOSFET PT8 NCH 30V/20V S ML RoHS: Compliant	6509	1:$0.7300 10:$0.6070 100:$0.3910 1000:$0.3130 3000:$0.2640 9000:$0.2550 24000:$0.2450
FDMC0310AS-F127 DISTI # 512-FDMC0310AS_F127	ON Semiconductor	MOSFET Computing MOSFET RoHS: Compliant	0	3000:$0.2490 9000:$0.2400 24000:$0.2300

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FDMC0310AS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes