BFP 405F H6327

Mfr. #:: BFP 405F H6327
Manufacturer:: Infineon Technologies
Description:: RF Bipolar Transistors RF BIP TRANSISTOR
Lifecycle:: New from this manufacturer.
Datasheet:: BFP 405F H6327 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: BFP 405F H6327 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: RF Bipolar Transistors

RoHS:: Y

Series:: BFP405

Transistor Type:: Bipolar

Technology:: Si

Transistor Polarity:: NPN

Collector- Emitter Voltage VCEO Max:: 4.5 V

Emitter- Base Voltage VEBO:: 1.5 V

Continuous Collector Current:: 12 mA

Minimum Operating Temperature:: - 65 C

Maximum Operating Temperature:: + 150 C

Configuration:: Single

Mounting Style:: SMD/SMT

Package / Case:: TSFP-4

Packaging:: Reel

DC Current Gain hFE Max:: 130

Type:: RF Bipolar Small Signal

Brand:: Infineon Technologies

Gain Bandwidth Product fT:: 25 GHz

Pd - Power Dissipation:: 55 mW

Product Type:: RF Bipolar Transistors

Factory Pack Quantity:: 3000

Subcategory:: Transistors

Part # Aliases:: BFP405FH6327XTSA1 BFP45FH6327XT SP000745258

Tags: BFP405FH, BFP405F, BFP40, BFP4, BFP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BFP 405F H6327 Description

***ical: Trans RF BJT NPN 4.5V 0.025A 75mW Automotive 4-Pin TSFP T/R

*** Electronic Components: RF Bipolar Transistors RF BIP TRANSISTOR

***i-Key: RF TRANSISTOR, L BAND, NPN

***el Nordic: Contact for details

***ical: Trans RF BJT NPN 4.5V 0.012A 54mW 4-Pin(3+Tab) CMPAK T/R

***ure Electronics: BFG410W Series 4.5 V 54 mW 22 GHz SMT NPN Wideband Transistor - SOT343R

***nell: TRANSISTOR, RF, NPN, 4.5V, 22GHZ, SOT343; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 4.5V; Transition Frequency ft: 22GHz; Power Dissipation Pd: 54mW; DC Collector Current: 12mA; DC Current Gain hFE: 80hFE; RF Transistor Case: SOT-343R; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: BFG410W Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***er Electronics: SC,SMALL SIGNAL TRANSISTOR / NPN SINGLE, HIGH FREQUENCY, VCEO:20V, IC:15MA

***S.I.T. Europe - USA - Asia: RF Small Signal Bipolar Transistor, 0.015A I(C), 1-Element, Very High Frequency Band, Silicon, NPN

***(Formerly Allied Electronics): Transistor NPN 20V 15mA 650MYz SMini3-F2

***el Electronic: Bipolar Transistors - BJT SM SIG TRANS FLT LD 2.0x2.1mm

*** Electronics: Bipolar Transistors - BJT Composite Transistor SC-113DB/SOT-363

***er Electronics: SC,COMPOSITE TRANSISTORS (NPN X 2 SERIES / NPN DUAL, FOR DIGITAL CIRCUITS, VCEO:20V, IC:15MA

***i-Key: RF TRANS 2 NPN 20V 650MHZ SOT363

***et Europe: Trans GP BJT NPN 6V 0.01A 4-Pin(3+Tab) CMPAK T/R

***ponent Stockers USA: L BAND Si NPN RF SMALL SIGNAL TRANSISTOR

***i-Key: TRANS NPN 6V 10MA 14GHZ SOT343R

***el Electronic: IC REG CONV CAR AUD 6OUT 15HZIPJ

***ical: Trans RF BJT NPN 2.8V 0.01A 136mW 4-Pin(3+Tab) DFP T/R

***ure Electronics: BFU710 Series NPN 5.5 V 10 mA Silicon Germanium RF Transistor - SOT-343F-4

*** Semiconductors SCT: NPN Wideband Silicon Germanium RF Transistor, DFP4, RoHS

***ment14 APAC: RF Transistor, NPN, 2.8V, 43GHZ, SOT343F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.8V; Transition Frequency ft:43GHz; Power

***nell: RF TRANSISTOR, NPN, 2.8V, 43GHZ, SOT343F; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 2.8V; Transition Frequency ft: 43GHz; Power Dissipation Pd: 136mW; DC Collector Current: 2mA; DC Current Gain hFE: 200hFE; RF Transistor Case: SOT-343F; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***(Formerly Allied Electronics): ROHM IMZ1AT108 Dual NPN+PNP Bipolar Transistor; 0.15 A; 50 V; 6-Pin SC-74

***S.I.T. Europe - USA - Asia: Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

***ure Electronics: IMZ1A Series 50 V 150 mA Surface Mount Dual NPN/PNP Digital Transistor - SC-74

***ical: Trans GP BJT NPN/PNP 50V 0.15A 300mW 6-Pin SMT T/R

***Parts: Transistor NPN, PNP, SMT6 150mA 50VSurface Mount

***ment14 APAC: MOSFET, NPNPNP, 50V, SOT457; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:300mW; DC

***ark: Transistor, Npn/pnp, Dual, 50V, Sc-74; Transistor Polarity:npn, Pnp; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current Npn:150Ma; Continuous Collector Current Pnp:150Ma Rohs Compliant: Yes

***nell: MOSFET, NPNPNP, 50V, SOT457; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 50V; Power Dissipation Pd: 300mW; DC Collector Current: 150mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-457; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 400mV; Current Ic Continuous a Max: 50mA; Gain Bandwidth ft Typ: 180MHz; Hfe Min: 120; Module Configuration: Dual; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: General Purpose; Transition Frequency ft: 180MHz

BFP 405F H6327 More Information

RF Transistors: Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14 GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29 dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.

Market price

Part #	Mfg.	Description	Stock	Price
BFP405FH6327XTSA1 DISTI # V72:2272_06391089	Infineon Technologies AG	Trans RF BJT NPN 4.5V 0.025A Automotive 4-Pin TSFP T/R RoHS: Compliant	2770	1000:$0.1384 500:$0.1805 250:$0.1824 100:$0.1843 25:$0.3053 10:$0.3085 1:$0.3800
BFP405FH6327XTSA1 DISTI # BFP405FH6327XTSA1-ND	Infineon Technologies AG	TRANS RF NPN 4.5V 25MA TSFP-4 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.1407
BFP405FH6327XTSA1 DISTI # 26195755	Infineon Technologies AG	Trans RF BJT NPN 4.5V 0.025A Automotive 4-Pin TSFP T/R RoHS: Compliant	2770	1000:$0.1384 500:$0.1805 250:$0.1824 100:$0.1843 56:$0.3053
BFP 405F H6327 DISTI # BFP 405F H6327	Infineon Technologies AG	Trans GP BJT NPN 4.5V 0.012A 4-Pin TSFP T/R (Alt: BFP 405F H6327) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 15000	3000:$0.1320 6000:$0.1266 9000:$0.1249 15000:$0.1200 30000:$0.1185 75000:$0.1155 150000:$0.1127
BFP405FH6327XTSA1 DISTI # BFP405FH6327XTSA1	Infineon Technologies AG	Trans GP BJT NPN 4.5V 0.012A 4-Pin TSFP T/R - Tape and Reel (Alt: BFP405FH6327XTSA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1299 6000:$0.1259 12000:$0.1209 18000:$0.1169 30000:$0.1149
BFP405FH6327XTSA1 DISTI # SP000745258	Infineon Technologies AG	Trans GP BJT NPN 4.5V 0.012A 4-Pin TSFP T/R (Alt: SP000745258) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.2209 6000:€0.1869 12000:€0.1669 18000:€0.1499 30000:€0.1389
BFP405FH6327	Infineon Technologies AG	RoHS: Not Compliant	148915	1000:$0.1200 100:$0.1300 500:$0.1300 25:$0.1400 1:$0.1500
BFP405FH6327XTSA1	Infineon Technologies AG	RF Small Signal Bipolar Transistor, 0.012A I(C), 1-Element, L Band, Silicon, NPN RoHS: Compliant	136076	1000:$0.1200 100:$0.1300 500:$0.1300 25:$0.1400 1:$0.1500
BFP 405F H6327 DISTI # 726-BFP405FH6327	Infineon Technologies AG	RF Bipolar Transistors RF BIP TRANSISTOR RoHS: Compliant	3209	1:$0.4000 10:$0.3280 100:$0.2000 1000:$0.1550 3000:$0.1320 9000:$0.1230 24000:$0.1170 45000:$0.1140
BFP405FH6327XTSA1 DISTI # 726-BFP405FH6327XTSA	Infineon Technologies AG	RF Bipolar Transistors RF BIP TRANSISTOR RoHS: Compliant	2277	1:$0.4000 10:$0.3280 100:$0.2000 1000:$0.1550 3000:$0.1320 9000:$0.1230 24000:$0.1170 45000:$0.1140
BFP405FH6327XTSA1 DISTI # 8268967P	Infineon Technologies AG	LOW NOISE RF TRANSISTOR NPN 4.5V TSFP4, RL	2600	250:£0.0920
BFP405FH6327XTSA1 DISTI # C1S322000610727	Infineon Technologies AG	Trans RF BJT NPN 4.5V 0.025A 75mW Automotive 4-Pin TSFP T/R RoHS: Compliant	2770	250:$0.1824 100:$0.1843 25:$0.3053 10:$0.3085
BFP 405F H6327 DISTI # C1S322000201848	Infineon Technologies AG	Trans GP BJT NPN 4.5V 0.012A 4-Pin TSFP T/R RoHS: Compliant	10	10:$0.4220

BFP 405F H6327

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes