NGTB25N120LWG

Mfr. #:: NGTB25N120LWG
Manufacturer:: ON Semiconductor
Description:: IGBT Transistors 1200/25A IGBT LPT TO-247
Lifecycle:: New from this manufacturer.
Datasheet:: NGTB25N120LWG Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: NGTB25N120LWG Datasheet NGTB25N120LWG Datasheet (P4-P6)NGTB25N120LWG Datasheet (P7-P9)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247

Mounting Style:: Through Hole

Collector- Emitter Voltage VCEO Max:: 1200 V

Collector-Emitter Saturation Voltage:: 2.3 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 50 A

Pd - Power Dissipation:: 77 W

Series:: NGTB25N120L

Packaging:: Tube

Brand:: ON Semiconductor

Gate-Emitter Leakage Current:: 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 30

Subcategory:: IGBTs

Unit Weight:: 0.229281 oz

Tags: NGTB25, NGTB2, NGTB, NGT

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NGTB25N120LWG Description

***ical: Trans IGBT Chip N-CH 1200V 50A 192000mW 3-Pin(3+Tab) TO-247 Tube

***r Electronics: Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247

***(Formerly Allied Electronics): NGTB25N120LWG, 50 A 1200 V, 4-Pin TO-247

*** Services: CoC and 2-years warranty / RFQ for pricing

***S: French Electronic Distributor since 1988

***nell: IGBT, 1200V, 25A, FS1, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 192W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT

***p One Stop: Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube

***ineon SCT: High speed 1200 V, 25 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses, PG-TO247-3, RoHS

***ment14 APAC: IGBT,1200V,25A,TO247; Transistor Type:IGBT; DC Collector Current:25A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:326W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:326W

***ineon: Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding inverters; Solar inverters; UPS; All hard switching applications

***ernational Rectifier: 1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode

***et: Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247AC

***S.I.T. Europe - USA - Asia: Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AC

***(Formerly Allied Electronics): 1200V TRENCH IGBT FOR INDUCTION COOKING50A COPAK-247

*** Electronic Components: IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A

***Yang: , IGBT, N, , 1200V, 50A, TO-247AC

***nell: IGBT,N CH,DIODE,1200V,50A,TO-247AC; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:179W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:179W

***ical: Trans IGBT Chip N-CH 1200V 50A 428000mW 3-Pin(3+Tab) TO-247 Tube

***r Electronics: Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AB

***emi: IGBT, 1200V, 25A Field Stop Trench

***ark: RAIL/1200V 25A FS2 Trench IGBT

***rchild Semiconductor: Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.

***ernational Rectifier: 1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode

***ical: Trans IGBT Chip N-CH 1200V 50A 179000mW 3-Pin(3+Tab) TO-247AD Tube

*** Source Electronics: INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS | IGBT 1200V 50A 179W TO247

***ical: Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube

***r Electronics: Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247

***ark: 1200V/25 Fast Igbt Only Fsii To-247 / Tube

***ical: Trans IGBT Chip N-CH 1200V 60A 384000mW 3-Pin(3+Tab) TO-247 Tube

***emi: IGBT, 1200V 30A FS2-RC Induction Heating

***r Electronics: Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel

***ment14 APAC: TRANSISTOR, IGBT, 2.2V, 60A, TO-247-3

***nell: TRANSISTOR, IGBT, 2.2V, 60A, TO-247-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 384W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -40°C

Market price

Part #	Mfg.	Description	Stock	Price
NGTB25N120LWG DISTI # V99:2348_07285973	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	60	2500:$1.5240 1000:$1.5840 500:$1.7020 250:$1.8070 100:$1.9200 25:$2.0410 10:$2.1530 1:$2.2800
NGTB25N120LWG DISTI # NGTB25N120LWGOS-ND	ON Semiconductor	IGBT 1200V 50A 192W TO247-3 RoHS: Compliant Min Qty: 120 Container: Tube	Limited Supply - Call
NGTB25N120LWG DISTI # 25862782	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	60	2500:$1.6383 1000:$1.7028 500:$1.8296 250:$1.9425 100:$2.0640 25:$2.1941 10:$2.3145 4:$2.4510
NGTB25N120LWG DISTI # 07W7307	ON Semiconductor	IGBT, 1.85V, 50A, TO-247-3,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:192W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes	0
NGTB25N120LWG DISTI # 70341219	ON Semiconductor	IGBT N-Ch 1200V 50A FS 1.85V TO247 RoHS: Compliant	0	10:$3.9890 100:$3.7850 250:$3.5910 500:$3.4210
NGTB25N120LWG DISTI # 863-NGTB25N120LWG	ON Semiconductor	IGBT Transistors 1200/25A IGBT LPT TO-247 RoHS: Compliant	0
NGTB25N120LWG	ON Semiconductor	Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	6749	1000:$1.9300 500:$2.0400 100:$2.1200 25:$2.2100 1:$2.3800

Image	Part #	Description
	Mfr.#: NGTB25N120FL3WG OMO.#: OMO-NGTB25N120FL3WG	IGBT Transistors IGBT 1200V 25A FS3 SOLAR/
	Mfr.#: NGTB25N120LWG OMO.#: OMO-NGTB25N120LWG	IGBT Transistors 1200/25A IGBT LPT TO-247
	Mfr.#: NGTB25N120FLWG OMO.#: OMO-NGTB25N120FLWG	IGBT Transistors 1200V/25A IGBT SOLAR/UPS
	Mfr.#: NGTB25N120FLWG OMO.#: OMO-NGTB25N120FLWG-ON-SEMICONDUCTOR	IGBT Transistors 1200V/25A IGBT SOLAR/UPS
	Mfr.#: NGTB25N120IHLWG OMO.#: OMO-NGTB25N120IHLWG-ON-SEMICONDUCTOR	IGBT Transistors 1200/25A IGBT LPT TO-247
	Mfr.#: NGTB25N120FL2WAG OMO.#: OMO-NGTB25N120FL2WAG-ON-SEMICONDUCTOR	Trans IGBT Chip N-CH 1.2KV 100A
	Mfr.#: NGTB25N120 OMO.#: OMO-NGTB25N120-1190	New and Original
	Mfr.#: NGTB25N120FL OMO.#: OMO-NGTB25N120FL-1190	New and Original
	Mfr.#: NGTB25N120FLWG/SL25T120F OMO.#: OMO-NGTB25N120FLWG-SL25T120F-1190	New and Original
	Mfr.#: NGTB25N120IHLWG,25N120IH OMO.#: OMO-NGTB25N120IHLWG-25N120IH-1190	New and Original

NGTB25N120LWG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes