NGTB25N120IHLWG

Mfr. #:: NGTB25N120IHLWG
Manufacturer:: ON Semiconductor
Description:: IGBT Transistors 1200/25A IGBT LPT TO-247
Lifecycle:: New from this manufacturer.
Datasheet:: NGTB25N120IHLWG Datasheet
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HTML Datasheet:: NGTB25N120IHLWG Datasheet NGTB25N120IHLWG Datasheet (P4-P6)NGTB25N120IHLWG Datasheet (P7-P9)
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Tags: NGTB25, NGTB2, NGTB, NGT

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NGTB25N120IHLWG Description

***ark: Igbt Single Transistor, 50 A, 1.85 V, 192 W, 1.2 Kv, To-247, 3 Rohs Compliant: Yes

***ical: Trans IGBT Chip N-CH 1200V 50A 192000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, 1200V, 25A, TO247; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 192W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT

***ical: Trans IGBT Chip N=-CH 1200V 40A 192000mW 3-Pin(3+Tab) TO-247 Tube

***emi: IGBT 1200V 20A FS1 Induction Heating

***r Electronics: Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247

***el Electronic: ON SEMICONDUCTOR NGTB20N120IHLWG IGBT Single Transistor, 40 A, 1.8 V, 192 W, 1.2 kV, TO-247, 3 Pins

***ark: IGBT, 1.8V, 40A, 192W, TO-247-3

***nell: IGBT, 1200V, 20A, TO247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 192W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT

***ernational Rectifier: 1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode

***et: Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247AC

***S.I.T. Europe - USA - Asia: Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AC

***(Formerly Allied Electronics): 1200V TRENCH IGBT FOR INDUCTION COOKING50A COPAK-247

*** Electronic Components: IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A

***Yang: , IGBT, N, , 1200V, 50A, TO-247AC

***nell: IGBT,N CH,DIODE,1200V,50A,TO-247AC; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:179W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:179W

***ical: Trans IGBT Chip N-CH 1200V 50A 428000mW 3-Pin(3+Tab) TO-247 Tube

***r Electronics: Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AB

***emi: IGBT, 1200V, 25A Field Stop Trench

***ark: RAIL/1200V 25A FS2 Trench IGBT

***rchild Semiconductor: Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.

***p One Stop: Trans IGBT Chip N-CH 1200V 57A 200000mW Automotive 3-Pin(3+Tab) TO-247AC Tube

***ineon SCT: 1200V DC-1 kHz (Standard) Discrete Automotive IGBT in a TO-247AC package, TO247-3, RoHS

***ineon: Benefits: Low Vce(on); Optimized for <1KHz switching applications; 150C operating temperature; AEC-Q101 qualified; Lead-free, RoHS compliant | Target Applications: PTC Heater

***nell: IGBT,N CH,1200V,57A,TO247AC; Transistor Type:IGBT; DC Collector Current:57A; Collector Emitter Voltage Vces:1.75V; Power Dissipation Pd:200mW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:200W

***ark: IGBT Single Transistor, 60 A, 2 V, 192 W, 1.2 kV, TO-247, 3

***ical: Trans IGBT Chip N-CH 1200V 60A 192000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, 1200V, 30A, TO-247-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 192W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Transistor Type: IGBT

***ical: Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail

***r Electronics: Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247

***Yang: PWR IGBT 35A 1200V NPT N-CHANNEL TO-247 - Bulk

***rchild Semiconductor: The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Market price

Part #	Mfg.	Description	Stock	Price
NGTB25N120IHLWG DISTI # NGTB25N120IHLWGOS-ND	ON Semiconductor	IGBT 1200V 50A 192W TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	1020:$1.6170 510:$1.9173 120:$2.2523 30:$2.5987 1:$3.0600
NGTB25N120IHLWG DISTI # 05W5644	ON Semiconductor	IGBT Single Transistor, 50 A, 1.85 V, 192 W, 1.2 kV, TO-247, 3 RoHS Compliant: Yes	0	500:$1.9700 250:$2.1800 100:$2.2900 50:$2.4100 25:$2.5200 10:$2.6300 1:$3.0800
NGTB25N120IHLWG DISTI # 70341218	ON Semiconductor	IGBT,1200V,25A,induction heating,TO247 RoHS: Compliant	0	10:$3.1100 50:$2.9500 100:$2.8000 250:$2.6600
NGTB25N120IHLWG DISTI # 863-NGTB25N120IHLWG	ON Semiconductor	IGBT Transistors 1200/25A IGBT LPT TO-247 RoHS: Compliant	0
NGTB25N120IHLWG DISTI # 7737383P	ON Semiconductor	IGBT 1200V 25A INDUCTION HEATING TO247, TU	81	250:£1.2700 100:£1.3100 50:£1.3700 10:£1.4600
NGTB25N120IHLWG DISTI # 7737383	ON Semiconductor	IGBT 1200V 25A INDUCTION HEATING TO247, EA	48	250:£1.2700 100:£1.3100 50:£1.3700 10:£1.4600 1:£2.2600
NGTB25N120IHLWG DISTI # 2114673	ON Semiconductor	IGBT, 1200V, 25A, TO247 RoHS: Compliant	0	500:$2.8000 250:$3.1300 100:$3.2900 10:$3.8000 1:$4.4800
NGTB25N120IHLWG DISTI # 2114673	ON Semiconductor	IGBT, 1200V, 25A, TO247 RoHS: Compliant	2	500:£1.4300 250:£1.6000 100:£1.6800 10:£1.9500 1:£2.5800

Image	Part #	Description
	Mfr.#: NGTB25N120FL2WAG OMO.#: OMO-NGTB25N120FL2WAG	IGBT Transistors 1200V/25 FAST IGBT FSII T
	Mfr.#: NGTB25N120LWG OMO.#: OMO-NGTB25N120LWG	IGBT Transistors 1200/25A IGBT LPT TO-247
	Mfr.#: NGTB25N120FLWG OMO.#: OMO-NGTB25N120FLWG	IGBT Transistors 1200V/25A IGBT SOLAR/UPS
	Mfr.#: NGTB25N120FLWG OMO.#: OMO-NGTB25N120FLWG-ON-SEMICONDUCTOR	IGBT Transistors 1200V/25A IGBT SOLAR/UPS
	Mfr.#: NGTB25N120LWG OMO.#: OMO-NGTB25N120LWG-ON-SEMICONDUCTOR	IGBT Transistors 1200/25A IGBT LPT TO-247
	Mfr.#: NGTB25N120IHLWG OMO.#: OMO-NGTB25N120IHLWG-ON-SEMICONDUCTOR	IGBT Transistors 1200/25A IGBT LPT TO-247
	Mfr.#: NGTB25N120FL2WAG OMO.#: OMO-NGTB25N120FL2WAG-ON-SEMICONDUCTOR	Trans IGBT Chip N-CH 1.2KV 100A
	Mfr.#: NGTB25N120FL3WG OMO.#: OMO-NGTB25N120FL3WG-ON-SEMICONDUCTOR	IGBT 1200V 100A TO247
	Mfr.#: NGTB25N120FLWG/SL25T120F OMO.#: OMO-NGTB25N120FLWG-SL25T120F-1190	New and Original
	Mfr.#: NGTB25N120IHLWG,25N120IH OMO.#: OMO-NGTB25N120IHLWG-25N120IH-1190	New and Original

NGTB25N120IHLWG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes