IPW60R031CFD7XKSA1

Mfr. #:: IPW60R031CFD7XKSA1
Manufacturer:: Infineon Technologies
Description:: MOSFET HIGH POWER_NEW
Lifecycle:: New from this manufacturer.
Datasheet:: IPW60R031CFD7XKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: IPW60R031CFD7XKSA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-247-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 63 A

Rds On - Drain-Source Resistance:: 26 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3.5 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 141 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 278 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: CoolMOS

Packaging:: Tube

Series:: CoolMOS CFD7

Transistor Type:: 1 N-Channel

Brand:: Infineon Technologies

Fall Time:: 6 ns

Product Type:: MOSFET

Rise Time:: 27 ns

Factory Pack Quantity:: 240

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 175 ns

Typical Turn-On Delay Time:: 48 ns

Part # Aliases:: IPW60R031CFD7 SP001617992

Tags: IPW60R03, IPW60R0, IPW60, IPW6, IPW

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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IPW60R031CFD7XKSA1 Description

***et Europe: CoolMOS CFD7 Power Transistor High Power 31mΩ 278W 600V PG-TO 247-3

***ark: Mosfet, N-Ch, 600V, 63A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.026Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes

***ineon: Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:

IPW60R031CFD7XKSA1 More Information

CFD7 CoolMOS™ MOSFETs: Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

Part #	Mfg.	Description	Stock	Price
IPW60R031CFD7XKSA1 DISTI # 33792058	Infineon Technologies AG	HIGH POWER_NEW	240	2:$7.6931
IPW60R031CFD7XKSA1 DISTI # IPW60R031CFD7XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 600V TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	230In Stock	720:$9.3515 240:$10.5124 25:$11.9312 10:$12.4470 1:$13.5400
IPW60R031CFD7XKSA1 DISTI # V99:2348_18786388	Infineon Technologies AG	HIGH POWER_NEW	0	240000:$7.6910 120000:$7.6960 24000:$8.4100 2400:$9.8900 240:$10.1500
IPW60R031CFD7XKSA1 DISTI # V36:1790_18786388	Infineon Technologies AG	HIGH POWER_NEW	0	240000:$7.1550 120000:$7.1600 24000:$8.0130 2400:$9.8280 240:$10.1500
IPW60R031CFD7XKSA1 DISTI # IPW60R031CFD7XKSA1	Infineon Technologies AG	CoolMOS CFD7 Power Transistor High Power 31mΩ 278W 600V PG-TO 247-3 - Bulk (Alt: IPW60R031CFD7XKSA1) Min Qty: 45 Container: Bulk	Americas - 0	450:$7.0900 225:$7.1900 135:$7.4900 90:$7.7900 45:$7.9900
IPW60R031CFD7XKSA1 DISTI # IPW60R031CFD7XKSA1	Infineon Technologies AG	CoolMOS CFD7 Power Transistor High Power 31mΩ 278W 600V PG-TO 247-3 - Rail/Tube (Alt: IPW60R031CFD7XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	2400:$7.7900 1440:$7.8900 960:$8.1900 480:$8.4900 240:$8.7900
IPW60R031CFD7XKSA1 DISTI # SP001617992	Infineon Technologies AG	CoolMOS CFD7 Power Transistor High Power 31mΩ 278W 600V PG-TO 247-3 (Alt: SP001617992) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€6.7900 500:€7.2900 100:€7.4900 50:€7.7900 25:€8.0900 10:€8.4900 1:€9.1900
IPW60R031CFD7XKSA1 DISTI # 43AC9329	Infineon Technologies AG	CoolMOS CFD7 Power Transistor High Power 31mΩ 278W 600V PG-TO 247-3 - Bulk (Alt: 43AC9329) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0
IPW60R031CFD7XKSA1 DISTI # 43AC9329	Infineon Technologies AG	MOSFET, N-CH, 600V, 63A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:63A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.026ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes	20	500:$9.8900 250:$10.5800 100:$11.1200 50:$11.8700 25:$12.6200 10:$13.1700 1:$14.3200
IPW60R031CFD7XKSA1 DISTI # 726-IPW60R031CFD7XKS	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	1995	1:$12.8900 10:$11.8500 25:$11.3600 100:$10.0100 250:$9.5200 500:$8.9000
IPW60R031CFD7XKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 63A I(D), 600V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 RoHS: Compliant	1	1000:$7.4000 500:$7.7800 100:$8.1000 25:$8.4500 1:$9.1000
IPW60R031CFD7XKSA1 DISTI # 2807984	Infineon Technologies AG	MOSFET, N-CH, 600V, 63A, TO-247	1596	100:£7.7200 50:£8.2400 10:£8.7600 5:£9.9400 1:£10.4500
IPW60R031CFD7XKSA1 DISTI # 2807984	Infineon Technologies AG	MOSFET, N-CH, 600V, 63A, TO-247 RoHS: Compliant	1338	720:$14.1000 240:$15.8500 25:$17.9900 10:$18.7600 1:$20.4000

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Availability

Stock:: Available
On Order:: 1985
Enter Quantity:

Current price of IPW60R031CFD7XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$12.89~~; ~~$12.89~~

10: ~~$11.85~~; ~~$118.50~~

25: ~~$11.36~~; ~~$284.00~~

100: ~~$10.01~~; ~~$1 001.00~~

250: ~~$9.52~~; ~~$2 380.00~~

500: ~~$8.90~~; ~~$4 450.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPW60R031CFD7XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes