PartNumber | IPW60R031CFD7XKSA1 | IPW60R037P7XKSA1 | IPW60R037CSFDXKSA1 |
Description | MOSFET HIGH POWER_NEW | MOSFET | MOSFET HIGH POWER_NEW |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 650 V |
Id Continuous Drain Current | 63 A | 76 A | 54 A |
Rds On Drain Source Resistance | 26 mOhms | 30 mOhms | 37 mOhms |
Vgs th Gate Source Threshold Voltage | 3.5 V | 3 V | 3.5 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 141 nC | 121 nC | 136 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 278 W | 255 W | 245 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | CoolMOS | CoolMOS | - |
Packaging | Tube | Tube | Tube |
Series | CoolMOS CFD7 | CoolMOS P7 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 6 ns | 4 ns | 6 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 27 ns | 21 ns | 30 ns |
Factory Pack Quantity | 240 | 240 | 240 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 175 ns | 90 ns | 196 ns |
Typical Turn On Delay Time | 48 ns | 22 ns | 53 ns |
Part # Aliases | IPW60R031CFD7 SP001617992 | IPW60R037P7 SP001606060 | IPW60R037CSFD SP001927820 |
Unit Weight | - | 0.211644 oz | - |