PartNumber | IPW60R018CFD7XKSA1 | IPW60R024CFD7XKSA1 | IPW60R017C7XKSA1 |
Description | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_NEW | MOSFET |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | - | Si |
Mounting Style | Through Hole | - | Through Hole |
Package / Case | TO-247-3 | - | TO-247-3 |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | - | 600 V |
Id Continuous Drain Current | 101 A | - | 109 A |
Rds On Drain Source Resistance | 18 mOhms | - | 17 mOhms |
Vgs th Gate Source Threshold Voltage | 3.5 V | - | 3 V |
Vgs Gate Source Voltage | 20 V | - | 20 V |
Qg Gate Charge | 251 nC | - | 240 nC |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 416 W | - | 446 W |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | Enhancement |
Packaging | Tube | Tube | Tube |
Transistor Type | 1 N-Channel | - | - |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 8 ns | - | 4 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 35 ns | - | 25 ns |
Factory Pack Quantity | 240 | 240 | 240 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 220 ns | - | 106 ns |
Typical Turn On Delay Time | 80 ns | - | 30 ns |
Part # Aliases | IPW60R018CFD7 SP001715618 | IPW60R024CFD7 SP002621050 | IPW60R017C7 SP001313542 |
Series | - | IPW60R024CFD7 | CoolMOS C7 |
Tradename | - | - | CoolMOS |
Height | - | - | 21.1 mm |
Length | - | - | 16.13 mm |
Width | - | - | 5.21 mm |
Unit Weight | - | - | 0.211644 oz |