IPW60R017C7XKSA1

Mfr. #:: IPW60R017C7XKSA1
Manufacturer:: Infineon Technologies
Description:: HIGH POWER_NEW
Lifecycle:: New from this manufacturer.
Datasheet:: IPW60R017C7XKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: IPW60R017C7XKSA1 more Information

Product Attribute
Attribute Value

Tags: IPW60R017, IPW60R01, IPW60R0, IPW60, IPW6, IPW

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

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Vacuum Packaging with PL

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IPW60R017C7XKSA1 Description

***ure Electronics: Single N-Channel 600 V 17 mOhm 240 nC CoolMOS Power Mosfet - TO-247-3

***ark: Mosfet, N-Ch, 600V, 109A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:109A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.015Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ineon: The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

IPW60R017C7XKSA1 More Information

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ C7 Power MOSFETs: Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.

Market price

Part #	Mfg.	Description	Stock	Price
IPW60R017C7XKSA1 DISTI # V99:2348_16141112	Infineon Technologies AG	Trans MOSFET N-CH 600V 109A Tube RoHS: Compliant	0
IPW60R017C7XKSA1 DISTI # V36:1790_16141112	Infineon Technologies AG	Trans MOSFET N-CH 600V 109A Tube RoHS: Compliant	0
IPW60R017C7XKSA1 DISTI # IPW60R017C7XKSA1-ND	Infineon Technologies AG	HIGH POWER_NEW RoHS: Compliant Min Qty: 240 Container: Tube	Temporarily Out of Stock	240:$17.5997
IPW60R017C7XKSA1 DISTI # SP001313542	Infineon Technologies AG	Trans MOSFET N-CH 650V 109A 3-Pin TO-247 Tube (Alt: SP001313542) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 270	1:€15.2900 10:€13.9900 25:€13.3900 50:€12.8900 100:€12.3900 500:€11.9900 1000:€11.1900
IPW60R017C7XKSA1 DISTI # IPW60R017C7XKSA1	Infineon Technologies AG	Trans MOSFET N-CH 650V 109A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW60R017C7XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	240:$14.4900 480:$13.9900 960:$13.4900 1440:$13.0900 2400:$12.7900
IPW60R017C7XKSA1 DISTI # 49AC0306	Infineon Technologies AG	MOSFET, N-CH, 600V, 109A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:109A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	442	250:$14.6800 100:$15.3900 50:$16.3000 25:$17.2100 10:$18.0200 1:$19.5400
IPW60R017C7XKSA1 DISTI # 726-IPW60R017C7XKSA1	Infineon Technologies AG	MOSFET RoHS: Compliant	0	1:$19.5400 5:$19.3400 10:$18.0200 25:$17.2100 100:$15.3900 250:$14.6800
IPW60R017C7XKSA1 DISTI # XSKDRABS0034513	Infineon Technologies AG	RoHS: Compliant	180 in Stock0 on Order	180:$18.8400 30:$20.1840
IPW60R017C7XKSA1 DISTI # 2839474	Infineon Technologies AG	MOSFET, N-CH, 600V, 109A, TO-247 RoHS: Compliant	875	250:$21.5900 100:$21.9500 50:$22.7000 10:$23.5100 5:$24.8500 1:$25.3200
IPW60R017C7XKSA1 DISTI # 2839474	Infineon Technologies AG	MOSFET, N-CH, 600V, 109A, TO-247 RoHS: Compliant	442	10:£14.1000 5:£15.8500 1:£16.0200

Related products

Image	Part #	Description
	Mfr.#: IPW60R018CFD7XKSA1 OMO.#: OMO-IPW60R018CFD7XKSA1	MOSFET HIGH POWER_NEW
	Mfr.#: IPW60R017C7XKSA1 OMO.#: OMO-IPW60R017C7XKSA1	MOSFET
	Mfr.#: IPW60R017C7XKSA1 OMO.#: OMO-IPW60R017C7XKSA1-INFINEON-TECHNOLOGIES	HIGH POWER_NEW
	Mfr.#: IPW60R018CFD7XKSA1 OMO.#: OMO-IPW60R018CFD7XKSA1-INFINEON-TECHNOLOGIES	HIGH POWER_NEW
	Mfr.#: IPW60R017C7 OMO.#: OMO-IPW60R017C7-1190	HIGH POWER_NEW_RO_TUBE (Alt: IPW60R017C7)
	Mfr.#: IPW60R017C7 60C7017 OMO.#: OMO-IPW60R017C7-60C7017-1190	New and Original

Availability

Stock:: Available
On Order:: 5000
Enter Quantity:

Current price of IPW60R017C7XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$18.00~~; ~~$18.00~~

10: ~~$17.10~~; ~~$171.00~~

100: ~~$16.20~~; ~~$1 620.00~~

500: ~~$15.30~~; ~~$7 650.00~~

1000: ~~$14.40~~; ~~$14 400.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes