PartNumber | IPW60R190E6FKSA1 | IPW60R190E6 | IPW60R190C6FKSA1 |
Description | MOSFET N-Ch 650V 20.2A TO247-3 CoolMOS E6 | MOSFET N-Ch 650V 20.2A TO247-3 CoolMOS E6 | MOSFET HIGH POWER_LEGACY |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
Id Continuous Drain Current | 20.2 A | 20.2 A | - |
Rds On Drain Source Resistance | 170 mOhms | 170 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 63 nC | 63 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 151 W | 151 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | CoolMOS | CoolMOS | CoolMOS |
Packaging | Tube | Tube | Tube |
Height | 21.1 mm | 21.1 mm | 21.1 mm |
Length | 16.13 mm | 16.13 mm | 16.13 mm |
Series | CoolMOS E6 | CoolMOS E6 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 5.21 mm | 5.21 mm | 5.21 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 8 ns | 8 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 10 ns | 10 ns | - |
Factory Pack Quantity | 240 | 240 | - |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 90 ns | 90 ns | - |
Typical Turn On Delay Time | 12 ns | 12 ns | - |
Part # Aliases | IPW60R190E6 IPW6R19E6XK SP000797384 | IPW60R190E6FKSA1 IPW6R19E6XK SP000797384 | IPW60R190C6 IPW6R19C6XK SP000621160 |
Unit Weight | 1.340411 oz | 1.340411 oz | 1.340411 oz |