IPW60R199CP

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

16 A

Rds On - Drain-Source Resistance:

180 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.5 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

43 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

139 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

CoolMOS

Packaging:

Tube

Height:

21.1 mm

Length:

16.13 mm

Series:

CoolMOS CE

Transistor Type:

1 N-Channel

Width:

5.21 mm

Brand:

Infineon Technologies

Fall Time:

5 ns

Product Type:

MOSFET

Rise Time:

5 ns

Factory Pack Quantity:

240

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

50 ns

Typical Turn-On Delay Time:

10 ns

Part # Aliases:

IPW60R199CPFKSA1 IPW6R199CPXK SP000089802

Unit Weight:

1.340411 oz

Tags

IPW60R199C, IPW60R199, IPW60R19, IPW60R1, IPW60, IPW6, IPW