IPW60R190E6FKSA1

IPW60R190E6FKSA1
Mfr. #:
IPW60R190E6FKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 650V 20.2A TO247-3 CoolMOS E6
Lifecycle:
New from this manufacturer.
Datasheet:
IPW60R190E6FKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
20.2 A
Rds On - Drain-Source Resistance:
170 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
63 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
151 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Tube
Height:
21.1 mm
Length:
16.13 mm
Series:
CoolMOS E6
Transistor Type:
1 N-Channel
Width:
5.21 mm
Brand:
Infineon Technologies
Fall Time:
8 ns
Product Type:
MOSFET
Rise Time:
10 ns
Factory Pack Quantity:
240
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
90 ns
Typical Turn-On Delay Time:
12 ns
Part # Aliases:
IPW60R190E6 IPW6R19E6XK SP000797384
Unit Weight:
1.340411 oz
Tags
IPW60R190E, IPW60R190, IPW60R19, IPW60R1, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-247 Tube
***ark
Mosfet, N-Ch, 600V, 20.2A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.17Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
CoolMOS E6 combines 's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
Part # Mfg. Description Stock Price
IPW60R190E6FKSA1
DISTI # V99:2348_06377241
Infineon Technologies AGTrans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
227
  • 2640:$1.7740
  • 720:$2.0950
  • 240:$2.4610
  • 25:$2.5520
  • 10:$2.8360
  • 1:$3.6608
IPW60R190E6FKSA1
DISTI # V36:1790_06377241
Infineon Technologies AGTrans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
0
  • 240000:$1.4780
  • 120000:$1.4810
  • 24000:$1.9280
  • 2400:$2.7910
  • 240:$2.9400
IPW60R190E6FKSA1
DISTI # IPW60R190E6FKSA1-ND
Infineon Technologies AGMOSFET N-CH 600V 20.2A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
511In Stock
  • 5040:$1.7047
  • 2640:$1.7713
  • 720:$2.2108
  • 240:$2.5970
  • 25:$2.9964
  • 10:$3.1700
  • 1:$3.5300
IPW60R190E6FKSA1
DISTI # 21100603
Infineon Technologies AGTrans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
2086
  • 7:$1.5888
IPW60R190E6FKSA1
DISTI # 30332229
Infineon Technologies AGTrans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
227
  • 4:$3.6608
IPW60R190E6FKSA1
DISTI # SP000797384
Infineon Technologies AGTrans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-247 (Alt: SP000797384)
RoHS: Compliant
Min Qty: 1
Europe - 720
  • 1000:€1.3900
  • 100:€1.4900
  • 500:€1.4900
  • 25:€1.5900
  • 50:€1.5900
  • 10:€1.6900
  • 1:€1.8900
IPW60R190E6FKSA1
DISTI # IPW60R190E6FKSA1
Infineon Technologies AGTrans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IPW60R190E6FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 960:$1.5900
  • 1440:$1.5900
  • 2400:$1.5900
  • 480:$1.6900
  • 240:$1.7900
IPW60R190E6FKSA1
DISTI # 13AC9097
Infineon Technologies AGMOSFET, N-CH, 600V, 20.2A, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:20.2A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.17ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes240
  • 100:$3.1100
  • 50:$3.2600
  • 25:$3.4000
  • 10:$3.5400
  • 1:$4.1100
IPW60R190E6FKSA1
DISTI # 726-IPW60R190E6FKSA1
Infineon Technologies AGMOSFET N-Ch 650V 20.2A TO247-3 CoolMOS E6
RoHS: Compliant
54
  • 1:$3.3500
  • 10:$2.8500
  • 100:$2.4700
  • 250:$2.3400
  • 500:$2.1000
IPW60R190E6
DISTI # 726-IPW60R190E6
Infineon Technologies AGMOSFET N-Ch 650V 20.2A TO247-3 CoolMOS E6
RoHS: Compliant
1
  • 1:$3.3500
  • 10:$2.8500
  • 100:$2.4700
  • 250:$2.3400
  • 500:$2.1000
IPW60R190E6FKSA1
DISTI # 1107443P
Infineon Technologies AGMOSFET N-CHANNEL COOLMOS 600V 20A TO247, TU6570
  • 400:£1.5900
  • 200:£1.6230
  • 80:£1.7530
  • 20:£1.9000
IPW60R190E6FKSA1
DISTI # IPW60R190E6FKSA1
Infineon Technologies AGTransistor: N-MOSFET,unipolar,600V,20.2A,151W,PG-TO247-3230
  • 30:$2.1300
  • 10:$2.4400
  • 5:$3.0500
  • 1:$3.5400
IPW60R190E6FKSA1
DISTI # 2726078
Infineon Technologies AGMOSFET, N-CH, 600V, 20.2A, TO-247-3
RoHS: Compliant
240
  • 2640:$2.6800
  • 720:$3.3400
  • 240:$3.9200
  • 25:$4.5200
  • 10:$4.7800
  • 1:$5.3200
IPW60R190E6FKSA1
DISTI # 2726078
Infineon Technologies AGMOSFET, N-CH, 600V, 20.2A, TO-247-3240
  • 500:£1.5200
  • 250:£1.6900
  • 100:£1.8000
  • 10:£2.0700
  • 1:£2.7400
IPW60R190E6FKSA1
DISTI # IPW60R190E6
Infineon Technologies AGN-Ch 600V 20,2A 151W 0,19R TO247
RoHS: Compliant
92
  • 1:€5.9500
  • 10:€2.9500
  • 50:€1.4500
  • 100:€1.3800
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B43504A5107M000

Mfr.#: B43504A5107M000

OMO.#: OMO-B43504A5107M000

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Mfr.#: CC1206KKX7RZBB102

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Mfr.#: 1317G13

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Mfr.#: ECW-F2W104JAQ

OMO.#: OMO-ECW-F2W104JAQ-PANASONIC

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Mfr.#: 1327G5

OMO.#: OMO-1327G5-673

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Mfr.#: 1327G7

OMO.#: OMO-1327G7-673

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Mfr.#: CC1206KRX7R9BB102

OMO.#: OMO-CC1206KRX7R9BB102-YAGEO

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Availability
Stock:
54
On Order:
2037
Enter Quantity:
Current price of IPW60R190E6FKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$3.35
$3.35
10
$2.85
$28.50
100
$2.47
$247.00
250
$2.34
$585.00
500
$2.10
$1 050.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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