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IPW60R040C7XKSA1

IPW60R040C7XKSA1
Mfr. #:
IPW60R040C7XKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET HIGH POWER_NEW
Lifecycle:
New from this manufacturer.
Datasheet:
IPW60R040C7XKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPW60R040C7XKSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
50 A
Rds On - Drain-Source Resistance:
34 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
107 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
227 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Tube
Height:
21.1 mm
Length:
16.13 mm
Series:
CoolMOS C7
Transistor Type:
1 N-Channel
Width:
5.21 mm
Brand:
Infineon Technologies
Fall Time:
3.2 ns
Product Type:
MOSFET
Rise Time:
11 ns
Factory Pack Quantity:
240
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
81 ns
Typical Turn-On Delay Time:
18.5 ns
Part # Aliases:
IPW60R040C7 SP001296190
Unit Weight:
1.340411 oz
Tags
IPW60R040, IPW60R04, IPW60R0, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 40 mOhm 107 nC CoolMOS™ Power Mosfet - TO-247-3
***ark
Mosfet, N-Ch, 600V, 50A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.034Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Part # Mfg. Description Stock Price
IPW60R040C7XKSA1
DISTI # V99:2348_06377973		Infineon Technologies AGTrans MOSFET N-CH 600V 50A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		213
  • 240:$8.0290
  • 10:$9.3820
  • 1:$10.1310
IPW60R040C7XKSA1
DISTI # V36:1790_06377973		Infineon Technologies AGTrans MOSFET N-CH 600V 50A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    IPW60R040C7XKSA1
    DISTI # IPW60R040C7XKSA1-ND    		Infineon Technologies AGMOSFET N-CH 600V 50A TO247-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		253In Stock
    • 1200:$8.3617
    • 720:$9.0294
    • 240:$10.4205
    • 10:$12.0900
    • 1:$13.2000
    IPW60R040C7XKSA1
    DISTI # 31924760    		Infineon Technologies AGTrans MOSFET N-CH 600V 50A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		213
    • 240:$8.6312
    • 10:$10.0856
    • 1:$10.8908
    IPW60R040C7XKSA1
    DISTI # IPW60R040C7    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: IPW60R040C7)
    RoHS: Compliant
    Min Qty: 240    		Asia - 240
    • 240:$8.4308
    • 480:$8.1589
    • 720:$7.9039
    • 1200:$7.6644
    • 2400:$7.5500
    • 6000:$7.4390
    • 12000:$7.3312
    IPW60R040C7XKSA1
    DISTI # IPW60R040C7XKSA1    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPW60R040C7XKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
    • 240:$7.1900
    • 480:$6.9900
    • 960:$6.6900
    • 1440:$6.4900
    • 2400:$6.3900
    IPW60R040C7XKSA1
    DISTI # SP001296190    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP001296190)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€7.5900
    • 10:€6.9900
    • 25:€6.6900
    • 50:€6.3900
    • 100:€6.1900
    • 500:€5.9900
    • 1000:€5.5900
    IPW60R040C7XKSA1
    DISTI # 13AC9095    		Infineon Technologies AGMOSFET, N-CH, 600V, 50A, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes89
    • 500:$8.5400
    • 250:$9.0500
    • 100:$9.4500
    • 50:$10.0100
    • 25:$10.5600
    • 10:$10.9800
    • 1:$11.8300
    IPW60R040C7XKSA1
    DISTI # 726-IPW60R040C7XKSA1    		Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant    		463
    • 1:$10.6100
    • 10:$9.7600
    • 25:$9.3500
    • 100:$8.2400
    • 250:$7.8400
    • 500:$7.3300
    IPW60R040C7XKSA1
    DISTI # 1702279    		Infineon Technologies AGMOSFET N-CH 600V 50A COOLMOS C7 TO-247, TU145
    • 300:£6.0470
    • 150:£6.3310
    • 30:£7.4300
    IPW60R040C7XKSA1
    DISTI # IPW60R040C7XKSA1    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,600V,50A,227W,PG-TO247-328
    • 1:$18.5200
    • 3:$15.9900
    • 10:$12.7500
    • 25:$11.1100
    IPW60R040C7XKSA1
    DISTI # IPW60R040C7    		Infineon Technologies AGN-Ch 600V 50A 227W 0,04R TO247
    RoHS: Compliant    		0
    • 1:€10.7000
    • 10:€7.7000
    • 50:€6.2000
    • 100:€5.9100
    IPW60R040C7XKSA1
    DISTI # 2726076    		Infineon Technologies AGMOSFET, N-CH, 600V, 50A, TO-247-3
    RoHS: Compliant    		0
    • 240:$14.0500
    • 10:$16.5300
    • 1:$18.1800
    IPW60R040C7XKSA1
    DISTI # 2726076    		Infineon Technologies AGMOSFET, N-CH, 600V, 50A, TO-247-3
    RoHS: Compliant    		0
    • 100:£6.4800
    • 50:£6.9200
    • 10:£7.3500
    • 5:£8.3400
    • 1:£8.9300
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    Availability
    Stock:
    Available
    On Order:
    1984
    Enter Quantity:
    Current price of IPW60R040C7XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $10.61
    $10.61
    10
    $9.76
    $97.60
    25
    $9.35
    $233.75
    100
    $8.24
    $824.00
    250
    $7.84
    $1 960.00
    500
    $7.33
    $3 665.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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