PartNumber | IPW60R040C7XKSA1 | IPW60R041C6 | IPW60R040CFD7XKSA1 |
Description | MOSFET HIGH POWER_NEW | MOSFET N-Ch 650V 77.5A TO247-3 CoolMOS C6 | MOSFET HIGH POWER_NEW |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id Continuous Drain Current | 50 A | 77.5 A | 50 A |
Rds On Drain Source Resistance | 34 mOhms | 37 mOhms | 40 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | 2.5 V | 3.5 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 107 nC | 290 nC | 109 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 227 W | 481 W | 227 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | CoolMOS | CoolMOS | - |
Packaging | Tube | Tube | Tube |
Height | 21.1 mm | 21.1 mm | - |
Length | 16.13 mm | 16.13 mm | - |
Series | CoolMOS C7 | CoolMOS C6 | CoolMOS CFD7 |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 5.21 mm | 5.21 mm | - |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 3.2 ns | 7 ns | 6 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 11 ns | 10 ns | 19 ns |
Factory Pack Quantity | 240 | 240 | 240 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 81 ns | 130 ns | 112 ns |
Typical Turn On Delay Time | 18.5 ns | 23 ns | 36 ns |
Part # Aliases | IPW60R040C7 SP001296190 | IPW60R041C6FKSA1 IPW6R41C6XK SP000718886 | IPW60R040CFD7 SP001686068 |
Unit Weight | 1.340411 oz | 1.340411 oz | - |