SIE832DF-T1-E3

Mfr. #:: SIE832DF-T1-E3
Manufacturer:: Vishay
Description:: RF Bipolar Transistors MOSFET 40V 50A 104W
Lifecycle:: New from this manufacturer.
Datasheet:: SIE832DF-T1-E3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Tags: SIE832, SIE83, SIE8, SIE

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIE832DF-T1-E3 Description

***ure Electronics: Single N-Channel 40 V 0.0055 Ohms Surface Mount Power Mosfet - PolarPAK

***ical: Trans MOSFET N-CH Si 40V 23.6A 10-Pin PolarPAK T/R

***et Europe: Trans MOSFET N-CH 40V 23.6A 10-Pin PolarPAK T/R

***i-Key: MOSFET N-CH 40V 50A 10-POLARPAK

***: N-CHANNEL 40-V (D-S) MOSFET

***ark: N Channel Mosfet, 40V, 50A Polarpak, Full Reel; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.0046Ohm; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.2V Rohs Compliant: Yes

***nell: MOSFET, N, POLAR PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:40V; Current, Id Cont:103A; Resistance, Rds On:0.0055ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.2V; Case Style:PolarPAK; Termination Type:SMD; Charge, Gate N-channel:25nC; Current, Idm Pulse:80A; Power Dissipation:104mW; Power, Pd:104W; Resistance, Rds on @ Vgs = 10V:0.0055ohm; Resistance, Rds on @ Vgs = 4.5V:0.007ohm; Voltage, Rds Measurement:10V; Voltage, Vds Max:40V; Voltage, Vgs th Max:3V; Voltage, Vgs th Min:1.5V

***ment14 APAC: MOSFET, N, POLAR PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:103A; Drain Source Voltage Vds:40V; On Resistance Rds(on):5.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:104W; Transistor Case Style:PolarPAK; SVHC:No SVHC (20-Jun-2011); N-channel Gate Charge:25nC; On State Resistance @ Vgs = 4.5V:7mohm; On State resistance @ Vgs = 10V:5.5mohm; Package / Case:PolarPAK; Power Dissipation Pd:104W; Power Dissipation Pd:104mW; Pulse Current Idm:80A; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1.5V

Market price

Part #	Mfg.	Description	Stock	Price
SIE832DF-T1-E3 DISTI # V72:2272_07434213	Vishay Intertechnologies	Trans MOSFET N-CH Si 40V 23.6A 10-Pin PolarPAK T/R	1400	1000:$1.3300 500:$1.3940 250:$1.4570 100:$1.6190 25:$1.7990 10:$1.8380 1:$2.0430
SIE832DF-T1-E3 DISTI # SIE832DF-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 40V 50A 10-POLARPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
SIE832DF-T1-E3 DISTI # SIE832DF-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 40V 50A 10-POLARPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SIE832DF-T1-E3 DISTI # SIE832DF-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 40V 50A 10-POLARPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SIE832DF-T1-E3 DISTI # 25778472	Vishay Intertechnologies	Trans MOSFET N-CH Si 40V 23.6A 10-Pin PolarPAK T/R	1400	1000:$1.3300 500:$1.3940 250:$1.4570 100:$1.6190 25:$1.7990 10:$1.8380 5:$2.0430
SIE832DF-T1-E3 DISTI # 69W7163	Vishay Intertechnologies	MOSFET, N CHANNEL, 40V, 50A, POLARPAK-10,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0046ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V RoHS Compliant: Yes	0	1:$3.2000 25:$2.6500 50:$2.4200 100:$2.1800 250:$2.1100 500:$1.9000
SIE832DF-T1-E3. DISTI # 30AC0113	Vishay Intertechnologies	N CHANNEL MOSFET, 40V, 50A POLARPAK, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0046ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.2V RoHS Compliant: Yes	0
SIE832DF-T1-E3 DISTI # 781-SIE832DF-T1-E3	Vishay Intertechnologies	MOSFET 40V Vds 20V Vgs PolarPAK RoHS: Compliant	2741	1:$3.2000 10:$2.6500 100:$2.1800 250:$2.1100 500:$1.9000
SIE832DF-T1-E3 DISTI # 2459395	Vishay Intertechnologies	MOSFET, N CHANNEL, 40V, 50A, POLARPAK-10 RoHS: Compliant	0	3000:£1.6700
SIE832DF-T1-E3 DISTI # 2459395	Vishay Intertechnologies	MOSFET, N CHANNEL, 40V, 50A, POLARPAK-10 RoHS: Compliant	0	1:$5.0700 10:$4.1900 100:$3.4600 250:$3.3400 500:$3.0100 3000:$3.0100
SIE832DF-T1-E3 DISTI # 1497648	Vishay Intertechnologies	MOSFET, N, POLAR PAK RoHS: Compliant	0	1:$5.0700 10:$4.1900 100:$3.4600 250:$3.3400 500:$3.0100 3000:$3.0100
SIE832DF-T1-E3 DISTI # C1S803600875210	Vishay Intertechnologies	MOSFETs RoHS: Compliant	1400	250:$1.4570 100:$1.6190 25:$1.7990 10:$1.8380 1:$2.0400
SIE832DF-T1-E3	Vishay Intertechnologies	MOSFET 40V Vds 20V Vgs PolarPAK	Americas -

Image	Part #	Description
	Mfr.#: SIE832DF-T1-E3 OMO.#: OMO-SIE832DF-T1-E3	MOSFET RECOMMENDED ALT 781-SIE818DF-GE3
	Mfr.#: SIE832DF-T1-GE3 OMO.#: OMO-SIE832DF-T1-GE3	MOSFET RECOMMENDED ALT 781-SIE818DF-GE3
	Mfr.#: SIE832DF-T1-E3 OMO.#: OMO-SIE832DF-T1-E3-VISHAY	RF Bipolar Transistors MOSFET 40V 50A 104W
	Mfr.#: SIE832DF-T1-GE3 OMO.#: OMO-SIE832DF-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 40V 103A 104W 5.5mohm @ 10V
	Mfr.#: SIE832DF OMO.#: OMO-SIE832DF-1190	New and Original
	Mfr.#: SIE832DFT1GE3 OMO.#: OMO-SIE832DFT1GE3-1190	Power Field-Effect Transistor, 23.6A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SIE832DF-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes