We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: info@omo-ic.com
| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| SIE832DF-T1-GE3 DISTI # SIE832DF-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 40V 50A 10-POLARPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 740In Stock |
|
| SIE832DF-T1-GE3 DISTI # SIE832DF-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 40V 50A 10-POLARPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call |
|
| SIE832DF-T1-GE3 DISTI # SIE832DF-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 40V 50A 10-POLARPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SIE832DF-T1-GE3 DISTI # 781-SIE832DF-GE3 | Vishay Intertechnologies | MOSFET 40V Vds 20V Vgs PolarPAK RoHS: Compliant | 0 | |
| SIE832DFT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 23.6A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 3000 |
| Image | Part # | Description |
|---|---|---|
|
Mfr.#: SIE832DF-T1-E3 OMO.#: OMO-SIE832DF-T1-E3 |
MOSFET RECOMMENDED ALT 781-SIE818DF-GE3 |
|
|
Mfr.#: SIE832DF-T1-GE3 OMO.#: OMO-SIE832DF-T1-GE3 |
MOSFET RECOMMENDED ALT 781-SIE818DF-GE3 |
|
Mfr.#: SIE832DF-T1-E3 OMO.#: OMO-SIE832DF-T1-E3-VISHAY |
RF Bipolar Transistors MOSFET 40V 50A 104W |
|
|
Mfr.#: SIE832DF-T1-GE3 OMO.#: OMO-SIE832DF-T1-GE3-VISHAY |
RF Bipolar Transistors MOSFET 40V 103A 104W 5.5mohm @ 10V |
|
Mfr.#: SIE832DF OMO.#: OMO-SIE832DF-1190 |
New and Original |
|
|
Mfr.#: SIE832DFT1GE3 OMO.#: OMO-SIE832DFT1GE3-1190 |
Power Field-Effect Transistor, 23.6A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
