www.vishay.com
6
Document Number: 74414
S09-1338-Rev. C, 13-Jul-09
Vishay Siliconix
SiE832DF
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74414
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 60010
-1
10
-4
100
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
t n e i s n a r T e v i t c e
E d e z i l a m r o N
e c n a d e p m I l a m r e h T
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 55 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top)
10
-3
10
-2
110
-1
10
-4
2
1
0.1
0.01
0.2
0.1
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
t n e i s n a r T e v i t c e
E
d e z i l a m r o N
e c n a d e p m I l a m r
e
h T
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Source
10
-3
10
-2
110
-1
10
-4
1
0.1
0.01
0.2
0.1
0.05
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
t n
e
i s n
a
r T
e v i t c e
E d
e z i
l a m r o
N
e c n a d e
p
m I l a m r e
h
T
0.02
