IRFHM8342TRPBF

Mfr. #:: IRFHM8342TRPBF
Manufacturer:: Infineon Technologies
Description:: MOSFET 30V 3.8nC SGL N-CH HEXFET Pwr MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: IRFHM8342TRPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: IRFHM8342TRPBF more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PQFN-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 10 A

Rds On - Drain-Source Resistance:: 20 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.8 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 10 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 2.6 W

Configuration:: Single

Tradename:: SmallPowIR

Packaging:: Reel

Height:: 1.05 mm

Length:: 3.3 mm

Series:: IRFHM8342

Transistor Type:: 1 N-Channel

Width:: 3.3 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 19 S

Fall Time:: 5.6 ns

Product Type:: MOSFET

Rise Time:: 30 ns

Factory Pack Quantity:: 4000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 7.6 ns

Typical Turn-On Delay Time:: 8.1 ns

Part # Aliases:: SP001551976

Tags: IRFHM83, IRFHM8, IRFHM, IRFH, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
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Step3:
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IRFHM8342TRPBF Description

***ure Electronics: Single N-Channel 30 V 16 mOhm 5 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS

***ical: Trans MOSFET N-CH 30V 10A 8-Pin PQFN EP T/R

***ineon: Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 6.2C/W); Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET

***(Formerly Allied Electronics): IRF8707TRPBF N-channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC

*** Electronics: In a Pack of 10, IRF8707PBF N-Channel MOSFET, 11 A, 30 V HEXFET, 8-Pin SOIC Infineon

***ure Electronics: Single N-Channel 30 V 17.5 mOhm 9.3 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R / MOSFET N-CH 30V 11A 8-SOIC

***ark: N Channel Mosfet, 30V, 11A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0119Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***ure Electronics: Single N-Channel 30 V 12.4 mOhm 5.4 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS

***ark: TAPE AND REEL / MOSFET, 30V,A, 12mOhm, 5nC, PQFN3.3x3.3 single

***p One Stop: Trans MOSFET N-CH 30V 12A 8-Pin PQFN EP T/R

***ineon: Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 5.0C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET

***ark: N CH POWER MOSFET, HEXFET, 30V, 11A, SO-8; Transistor Polarity:N Channel; Contin

***(Formerly Allied Electronics): MOSFET, 30V, 11A, 11.9 MOHM, 6.2 NC QG, SO-8, HALOGEN-FREE

***et: Trans MOSFET N-CH 30V 11A 8-Pin SOIC T/R

***nell: MOSFET, N-CH, 30V, 11A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0093ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Pow

***emi: N-Channel Fast Switching PowerTrench® MOSFET, 30V, 13A, 11.3mΩ

***et Europe: Trans MOSFET N-CH 30V 13A 8-Pin SOIC N T/R

***ment14 APAC: MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:13A; Package / Case:SOIC-8; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

***ure Electronics: Dual N-Channel 30 V 15.5 mOhm 5.7 nC HEXFET® Power Mosfet - SOIC-8

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 8A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ment14 APAC: MOSFET, DUAL N-CH 30V 8A/11A SO8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):15.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8mA; Package / Case:SOIC; Power Dissipation Pd:2.4W; Power Dissipation Pd:2.4W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V

***ark: MOSFET, N-CH, 30V, 6MLP; Transistor Polarity:N Channel; Continuous Drain Current

***emi: N-Channel Power Trench® MOSFET 30V, 9.0A, 16mΩ

***ure Electronics: N-Channel 30 V 9 A 16 mOhm 2.4 W SMT Power Trench® MOSFET - MicroFET-6 (2x2)

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been optimized for rDS(on), switching performance.

***nell: MOSFET, N-CH, 30V, 6MLP; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.4W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:MicroFET; No. of Pins:6; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

IRFHM8342TRPBF More Information

Small PowIR MOSFETs: Infineon Small PowIR MOSFETs combine high performance silicon technology with small and innovative packaging to offer designers more flexibility when it comes to making a MOSFET selection. The IRLML6244TRPBF provides 21 mO max @ 4.5Vgs RDS(on). The new 2x2 PQFN package offers some of the smallest dual configurations possible (dual N or dual P) while providing 19°C/W optimal thermal performance. Infineon Small PowIR MOSFETs are available in SO-8, TSOP-6 and PQFN 3x3 packages allowing designers to maximize board space, save on part count and improve system efficiency.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IRFHM8342TRPBF DISTI # V72:2272_13890761	Infineon Technologies AG	Trans MOSFET N-CH 30V 10A 8-Pin PQFN EP T/R	2488	1000:$0.2064 500:$0.2544 250:$0.2572 100:$0.2601 25:$0.3730 10:$0.3776 1:$0.4321
IRFHM8342TRPBF DISTI # IRFHM8342TRPBFCT-ND	Infineon Technologies AG	MOSFET N-CH 30V 10A 8PQFN RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRFHM8342TRPBF DISTI # IRFHM8342TRPBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 10A 8PQFN RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRFHM8342TRPBF DISTI # IRFHM8342TRPBFTR-ND	Infineon Technologies AG	MOSFET N-CH 30V 10A 8PQFN RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Temporarily Out of Stock	4000:$0.2725
IRFHM8342TRPBF DISTI # 24576937	Infineon Technologies AG	Trans MOSFET N-CH 30V 10A 8-Pin PQFN EP T/R	4000	4000:$0.1495
IRFHM8342TRPBF DISTI # 31035522	Infineon Technologies AG	Trans MOSFET N-CH 30V 10A 8-Pin PQFN EP T/R	2488	1000:$0.2064 500:$0.2544 250:$0.2572 100:$0.2601 44:$0.3730
IRFHM8342TRPBF DISTI # IRFHM8342TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 10A 8-Pin PQFN T/R (Alt: IRFHM8342TRPBF) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0
IRFHM8342TRPBF DISTI # IRFHM8342TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 10A 8-Pin PQFN T/R - Tape and Reel (Alt: IRFHM8342TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.1649 8000:$0.1589 16000:$0.1529 24000:$0.1479 40000:$0.1459
IRFHM8342TRPBF DISTI # SP001551976	Infineon Technologies AG	Trans MOSFET N-CH 30V 10A 8-Pin PQFN T/R (Alt: SP001551976) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 0	4000:€0.2769 8000:€0.2149 16000:€0.1759 24000:€0.1489 40000:€0.1379
IRFHM8342TRPBF DISTI # 942-IRFHM8342TRPBF	Infineon Technologies AG	MOSFET 30V 3.8nC SGL N-CH HEXFET Pwr MOSFET RoHS: Compliant	0	1:$0.6300 10:$0.5200 100:$0.3170 1000:$0.2450 4000:$0.2090
IRFHM8342TRPBF DISTI # C1S322000490983	Infineon Technologies AG	Trans MOSFET N-CH 30V 10A 8-Pin PQFN EP T/R RoHS: Compliant	2488	250:$0.2572 100:$0.2601 25:$0.3730 10:$0.3776
IRFHM8342TRPBF DISTI # C1S322000490992	Infineon Technologies AG	Trans MOSFET N-CH 30V 10A 8-Pin PQFN EP T/R RoHS: Compliant	4000	4000:$0.2380

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Availability

Stock:: Available
On Order:: 1987
Enter Quantity:

Current price of IRFHM8342TRPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.62~~; ~~$0.62~~

10: ~~$0.52~~; ~~$5.20~~

100: ~~$0.32~~; ~~$31.70~~

1000: ~~$0.24~~; ~~$245.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IRFHM8342TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes