FDL100N50F

FDL100N50F
Mfr. #:
FDL100N50F
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET UniFET 500V
Lifecycle:
New from this manufacturer.
Datasheet:
FDL100N50F Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-264-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
500 V
Id - Continuous Drain Current:
100 A
Rds On - Drain-Source Resistance:
43 mOhms
Vgs - Gate-Source Voltage:
30 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.5 kW
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
UniFET
Packaging:
Tube
Height:
26.4 mm
Length:
20.2 mm
Series:
FDL100N50F
Transistor Type:
1 N-Channel
Type:
RFET
Width:
5.2 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
95 S
Fall Time:
105 ns
Product Type:
MOSFET
Rise Time:
186 ns
Factory Pack Quantity:
375
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
202 ns
Typical Turn-On Delay Time:
63 ns
Unit Weight:
0.238311 oz
Tags
FDL10, FDL1, FDL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, UniFETTM, FRFET®, 500 V, 100 A, 55 mΩ, TO-264
*** Source Electronics
Trans MOSFET N-CH 500V 100A 3-Pin(3+Tab) TO-264AA Tube / MOSFET N-CH 500V 100A TO-264
***nell
MOSFET, N-CH, 500V, 100A, TO-264AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V
***roFlash
Power Field-Effect Transistor, 100A I(D), 500V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***el Electronic
DC DC Converters 1 (Unlimited) 1 8-SMD Module, 5 Leads Surface Mount Isolated Module ITE (Commercial) ECONOLINE R1SE (E-Series) (1W) -40°C~85°C 0.50Lx0.42W x 0.26 H 12.8mmx10.7mmx6.7mm Module DC-DC 5VIN 1-OUT 5V 0.2A 1W 5-Pin SMD
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, QFET®, 500 V, 40 A, 110 mΩ, TO-264
***r Electronics
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, QFET®, FRFET®, 500 V, 40 A, 110 mΩ, TO-264
***r Electronics
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
*** Electronics
Trans MOSFET N-CH 400V 50A 3-Pin(3+Tab) TO-264 Rail
***ser
MOSFETs 400V N-Channel QFET
Part # Mfg. Description Stock Price
FDL100N50F
DISTI # C1S541901537904
ON SemiconductorMOSFETs
RoHS: Compliant
413
  • 375:$8.2200
FDL100N50F
DISTI # FDL100N50F-ND
ON SemiconductorMOSFET N-CH 500V 100A TO-264
RoHS: Compliant
Min Qty: 1
Container: Tube
881In Stock
  • 375:$12.6847
  • 10:$16.3670
  • 1:$18.0000
FDL100N50F
DISTI # FDL100N50F
ON SemiconductorTrans MOSFET N-CH 500V 100A 3-Pin(3+Tab) TO-264AA - Rail/Tube (Alt: FDL100N50F)
RoHS: Compliant
Min Qty: 1
Container: Tube
Americas - 112
  • 1:$8.6900
  • 10:$8.6900
  • 25:$8.6900
  • 50:$8.6900
  • 100:$8.6900
  • 500:$7.9900
  • 1000:$7.8900
FDL100N50F
DISTI # 31Y1379
ON SemiconductorMOSFET, N-CH, 500V, 100A, TO-264AA-3,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.043ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,MSL:- RoHS Compliant: Yes310
  • 1:$15.6200
  • 10:$14.3600
  • 25:$13.7700
  • 50:$12.9500
  • 100:$12.1300
  • 250:$11.5400
  • 500:$10.7900
FDL100N50F
DISTI # 512-FDL100N50F
ON SemiconductorMOSFET UniFET 500V
RoHS: Compliant
836
  • 1:$15.6200
  • 10:$14.3600
  • 25:$13.7700
  • 100:$12.1300
  • 250:$11.5400
  • 500:$10.7900
FDL100N50FFairchild Semiconductor CorporationPower Field-Effect Transistor, 100A I(D), 500V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
RoHS: Compliant
2570
  • 1000:$9.7400
  • 500:$10.2500
  • 100:$10.6700
  • 25:$11.1300
  • 1:$11.9800
FDL100N50F
DISTI # 7599128
ON SemiconductorMOSFET N-CH 500V 100A UNIFET TO264AA, EA64
  • 1:£13.1900
  • 13:£12.1300
FDL100N50F
DISTI # 7599128P
ON SemiconductorMOSFET N-CH 500V 100A UNIFET TO264AA, TU446
  • 13:£12.1300
FDL100N50F
DISTI # 2453857
ON SemiconductorMOSFET, N-CH, 500V, 100A, TO-264AA-3
RoHS: Compliant
602
  • 1:£12.2300
  • 5:£11.8300
  • 10:£10.4200
  • 50:£9.8100
  • 100:£9.1900
FDL100N50F
DISTI # 2453857
ON SemiconductorMOSFET, N-CH, 500V, 100A, TO-264AA-3
RoHS: Compliant
310
  • 1:$24.7200
  • 10:$22.7300
  • 25:$21.7900
  • 100:$19.2000
  • 250:$18.2600
  • 500:$17.0800
  • 1000:$15.6700
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Availability
Stock:
Available
On Order:
1984
Enter Quantity:
Current price of FDL100N50F is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$11.63
$11.63
10
$10.69
$106.90
25
$10.25
$256.25
100
$9.03
$903.00
250
$8.58
$2 145.00
500
$8.03
$4 015.00
1000
$7.92
$7 920.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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