IPB034N03L G

Mfr. #:: IPB034N03L G
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS 3
Lifecycle:: New from this manufacturer.
Datasheet:: IPB034N03L G Datasheet
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More Information:: IPB034N03L G more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 80 A

Rds On - Drain-Source Resistance:: 3.4 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 94 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 4.4 mm

Length:: 10 mm

Series:: OptiMOS 3

Transistor Type:: 1 N-Channel

Width:: 9.25 mm

Brand:: Infineon Technologies

Fall Time:: 5.4 ns

Product Type:: MOSFET

Rise Time:: 6.4 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 35 ns

Typical Turn-On Delay Time:: 9.2 ns

Part # Aliases:: IPB034N03LGATMA1 IPB34N3LGXT SP000304126

Unit Weight:: 0.056438 oz

Tags: IPB034N03LG, IPB034N03, IPB034, IPB03, IPB0, IPB

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
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Step2:
Anti-Static Bag

Step3:
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IPB034N03L G More Information

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IPB034N03LGATMA1 DISTI # V72:2272_06384520	Infineon Technologies AG	Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$0.8271 500:$0.8359 250:$1.0310 100:$1.1498 25:$1.4036 10:$1.4191 1:$1.5649
IPB034N03LGATMA1 DISTI # V36:1790_06384520	Infineon Technologies AG	Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0
IPB034N03LGATMA1 DISTI # IPB034N03LGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 80A TO-263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	157In Stock	500:$0.9973 100:$1.2823 10:$1.5960 1:$1.7700
IPB034N03LGATMA1 DISTI # IPB034N03LGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 80A TO-263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	157In Stock	500:$0.9973 100:$1.2823 10:$1.5960 1:$1.7700
IPB034N03LGATMA1 DISTI # IPB034N03LGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 80A TO-263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	10000:$0.7042 5000:$0.7193 2000:$0.7470 1000:$0.8023
IPB034N03LGATMA1 DISTI # 31056862	Infineon Technologies AG	Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$0.8891 500:$0.8986 250:$1.1083 100:$1.2360 25:$1.5089 10:$1.5255
IPB034N03LGATMA1 DISTI # 31053479	Infineon Technologies AG	Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$0.8035
IPB034N03LGXT DISTI # IPB034N03LGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB034N03LGATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 1000	1000:$0.7239 2000:$0.6979 4000:$0.6729 6000:$0.6499 10000:$0.6389
IPB034N03LG DISTI # SP000304126	Infineon Technologies AG	Trans MOSFET N-CH 30V 80A 3-Pin TO-263 T/R (Alt: SP000304126) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€1.0619 2000:€0.8909 4000:€0.7439 6000:€0.6479 10000:€0.6069
IPB034N03LGATMA1 DISTI # SP000304126	Infineon Technologies AG	Trans MOSFET N-CH 30V 80A 3-Pin TO-263 T/R (Alt: SP000304126) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€0.8899 2000:€0.7279 4000:€0.6679 6000:€0.6159 10000:€0.5719
IPB034N03LGATMA1 DISTI # 60R2650	Infineon Technologies AG	MOSFET, N CHANNEL, 30V, 80A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes	0	500:$0.8450 100:$1.0200 10:$1.3100 1:$1.4600
IPB034N03L G DISTI # 726-IPB034N03LG	Infineon Technologies AG	MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS 3 RoHS: Compliant	1790	1:$1.4000 10:$1.2000 100:$0.9170 500:$0.8100 1000:$0.6400
IPB034N03LGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 80A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	3000	1000:$0.5800 500:$0.6100 100:$0.6300 25:$0.6600 1:$0.7100
IPB034N03LGATMA1 DISTI # 7545424P	Infineon Technologies AG	MOSFET N-CH 30V 80A OPTIMOS3 LOGIC TO263, RL	1910	500:£0.5800 250:£0.6580 50:£0.7580 10:£0.8600
IPB034N03LGATMA1 DISTI # 7545424	Infineon Technologies AG	MOSFET N-CH 30V 80A OPTIMOS3 LOGIC TO263, PK	110	500:£0.5800 250:£0.6580 50:£0.7580 10:£0.8600 5:£1.0820
IPB034N03LGATMA1 DISTI # IPB034N03LGATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,80A,94W,PG-TO263-3	954	1:$0.9190 3:$0.8270 10:$0.7305 100:$0.6351 1000:$0.5913
IPB034N03LGATMA1 DISTI # 1775527	Infineon Technologies AG	MOSFET, N CH, 80A, 30V, PG-TO263-3 RoHS: Compliant	1771	1000:$0.9640 500:$1.2200 100:$1.3800 10:$1.8100 1:$2.1100
IPB034N03LGATMA1 DISTI # 1775527	Infineon Technologies AG	MOSFET, N CH, 80A, 30V, PG-TO263-3 RoHS: Compliant	1871	500:£0.5870 250:£0.6260 100:£0.6650 25:£0.8710 5:£1.0100

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Availability

Stock:: Available
On Order:: 1984
Enter Quantity:

Current price of IPB034N03L G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.40~~; ~~$1.40~~

10: ~~$1.20~~; ~~$12.00~~

100: ~~$0.92~~; ~~$91.70~~

500: ~~$0.81~~; ~~$405.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPB034N03L G

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Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
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