FDI150N10

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-262-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

57 A

Rds On - Drain-Source Resistance:

12 mOhms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

110 W

Configuration:

Single

Tradename:

PowerTrench

Packaging:

Tube

Height:

7.88 mm

Length:

10.29 mm

Series:

FDI150N10

Transistor Type:

1 N-Channel

Type:

Power Trench MOSFET

Width:

4.83 mm

Brand:

ON Semiconductor / Fairchild

Forward Transconductance - Min:

156 S

Fall Time:

83 ns

Product Type:

MOSFET

Rise Time:

164 ns

Factory Pack Quantity:

800

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

86 ns

Typical Turn-On Delay Time:

47 ns

Unit Weight:

0.073511 oz

Tags

FDI1, FDI