IRG4PF50WDPBF

Mfr. #:: IRG4PF50WDPBF
Manufacturer:: Infineon Technologies
Description:: IGBT Transistors 900V Warp 20-100kHz
Lifecycle:: New from this manufacturer.
Datasheet:: IRG4PF50WDPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: IRG4PF50WDPBF more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 900 V

Collector-Emitter Saturation Voltage:: 2.25 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 51 A

Pd - Power Dissipation:: 200 W

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Packaging:: Tube

Continuous Collector Current Ic Max:: 51 A

Height:: 20.7 mm

Length:: 15.87 mm

Width:: 5.31 mm

Brand:: Infineon Technologies

Gate-Emitter Leakage Current:: 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 400

Subcategory:: IGBTs

Part # Aliases:: SP001547862

Unit Weight:: 1.340411 oz

Tags: IRG4PF50WDP, IRG4PF50WD, IRG4PF, IRG4P, IRG4, IRG

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRG4PF50WDPBF Description

***p One Stop Global: Trans IGBT Chip N-CH 900V 51A 200000mW 3-Pin(3+Tab) TO-247AC Tube

***ure Electronics: IRG4PF50WDPBF Series 900 V 28 A N-Channel UltraFast IGBT - TO-247AC

***ineon SCT: Copacked 900V IGBT in a TO-247AC package with ultrafast 20-100 kHz ultrafast, ultrasoft recovery anti-parallel diode, TO247COPAK-3, RoHS

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 900 V Collector-emitter saturation voltage: 2.7 V Current release time: 190 ns Power dissipation: 200 W

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:51A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:200W; Package/Case:TO-247AC ;RoHS Compliant: Yes

***ment14 APAC: IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; DC Collector Current:51A; Collector Emitter Voltage Vces:2.25V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:900V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:51A; Current Temperature:25°C; Device Marking:IRG4PF50WDPbF; Fall Time Max:190ns; Fall Time tf:220ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:204A; Rise Time:52ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:900V

IRG4PF50WDPBF More Information

300-1200V IGBTs: Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IRG4PF50WDPBF DISTI # V99:2348_13892012	Infineon Technologies AG	Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC Tube	298	100:$5.8130 25:$6.5750 10:$6.8490 1:$7.4360
IRG4PF50WDPBF DISTI # IRG4PF50WDPBF-ND	Infineon Technologies AG	IGBT 900V 51A 200W TO247AC RoHS: Compliant Min Qty: 1 Container: Tube	358In Stock	500:$5.7841 100:$6.6424 25:$7.6500 1:$8.8800
IRG4PF50WDPBF DISTI # 8433775	Infineon Technologies AG	Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC Tube	450	100:$6.0768 25:$6.9984 10:$7.3440 3:$8.1216
IRG4PF50WDPBF DISTI # 27555618	Infineon Technologies AG	Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC Tube	298	100:$5.8130 25:$6.5750 10:$6.8490 2:$7.4360
IRG4PF50WDPBF DISTI # 30606848	Infineon Technologies AG	Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC Tube	20	10:$9.6263 3:$11.0798
IRG4PF50WDPBF DISTI # IRG4PF50WDPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRG4PF50WDPBF) RoHS: Compliant Min Qty: 150 Container: Tube	Americas - 0	150:$4.8900 200:$4.6900 350:$4.4900 750:$4.3900 1500:$4.2900
IRG4PF50WDPBF DISTI # IRG4PF50WDPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC (Alt: IRG4PF50WDPBF) RoHS: Compliant Min Qty: 400	Asia - 0
IRG4PF50WDPBF DISTI # SP001547862	Infineon Technologies AG	Trans IGBT Chip N-CH 900V 51A 3-Pin(3+Tab) TO-247AC (Alt: SP001547862) RoHS: Compliant Min Qty: 1	Europe - 0	1:€8.7200 5:€8.0300 10:€6.9200 50:€6.4700 100:€6.0100 250:€4.5600
IRG4PF50WDPBF DISTI # 63J7537	Infineon Technologies AG	SINGLE IGBT, 900V, 51A,DC Collector Current:51A,Collector Emitter Saturation Voltage Vce(on):2.74V,Power Dissipation Pd:200W,Collector Emitter Voltage V(br)ceo:900V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes	37	1:$8.4600 10:$7.6500 25:$7.2900 50:$6.8100 100:$6.3300 250:$6.0500 500:$5.5100
IRG4PF50WDPBF DISTI # 70017503	Infineon Technologies AG	900V WARP 20-100 KHZ COPACK IGBT IN A TO-247AC PACKAGE RoHS: Compliant	0	1:$6.9970 10:$6.1730 100:$5.3830 500:$4.6660 1000:$4.1150
IRG4PF50WDPBF DISTI # 942-IRG4PF50WDPBF	Infineon Technologies AG	IGBT Transistors 900V Warp 20-100kHz RoHS: Compliant	413	1:$8.4600 10:$7.6500 25:$7.2900 100:$6.3300 250:$6.0500 500:$5.5100
IRG4PF50WDPBF	International Rectifier		33
IRG4PF50WDPBF DISTI # 5412076	Infineon Technologies AG	TRANSISTOR IGBT N-CH 900V 51A TO247AC, EA	388	1:£7.3000 13:£6.1500
IRG4PF50WDPBF	International Rectifier	RoHS: Compliant	Europe - 75
IRG4PF50WDPBF DISTI # IRG4PF50WDPBF	Infineon Technologies AG	900W 51A 200W TO247AC RoHS: Compliant	30	5:€5.3500 25:€4.7500 100:€4.4500 200:€4.0500
IRG4PF50WDPBF DISTI # IGBT1766	Infineon Technologies AG	IGBT TO-247 RoHS: Compliant	Stock DE - 0Stock US - 0	25:$5.5800 50:$5.2400 100:$5.1500 200:$5.0700 375:$4.7600
IRG4PF50WDPBF DISTI # C1S322000498806	Infineon Technologies AG	IGBT Chip	20	10:$7.5500 1:$8.7600
IRG4PF50WDPBF DISTI # C1S322000571464	Infineon Technologies AG	IGBT Chip	423	100:$5.8130 25:$6.5750 10:$6.8490 1:$7.4360
IRG4PF50WDPBF DISTI # 8650640	Infineon Technologies AG	IGBT, 900V, 51A, TO-247AC RoHS: Compliant	153	1:$13.3900 10:$12.1100 25:$11.5400 100:$10.0200 250:$9.5800 500:$8.7200
IRG4PF50WDPBF DISTI # 8650640	Infineon Technologies AG	IGBT, 900V, 51A, TO-247AC RoHS: Compliant	179	1:£7.0900 5:£6.5300 10:£5.6300 50:£5.2600 100:£4.8900

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Availability

Stock:: 263
On Order:: 2246
Enter Quantity:

Current price of IRG4PF50WDPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$8.45~~; ~~$8.45~~

10: ~~$7.64~~; ~~$76.40~~

25: ~~$7.28~~; ~~$182.00~~

100: ~~$6.32~~; ~~$632.00~~

250: ~~$6.04~~; ~~$1 510.00~~

500: ~~$5.50~~; ~~$2 750.00~~

1000: ~~$4.79~~; ~~$4 790.00~~

2500: ~~$4.62~~; ~~$11 550.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IRG4PF50WDPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes