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FCMT199N60

FCMT199N60
Mfr. #:
FCMT199N60
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 199mohm 600V SuperFET2
Lifecycle:
New from this manufacturer.
Datasheet:
FCMT199N60 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
Power-88-4
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
20.2 A
Rds On - Drain-Source Resistance:
199 mOhms
Vgs - Gate-Source Voltage:
20 V, 30 V
Qg - Gate Charge:
57 nC
Minimum Operating Temperature:
- 50 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
208 W
Tradename:
SuperFET II
Packaging:
Reel
Height:
1.1 mm
Length:
8 mm
Series:
FCMT199N60
Width:
8 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
20 S
Fall Time:
5 ns
Product Type:
MOSFET
Rise Time:
10 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
64 ns
Typical Turn-On Delay Time:
20 ns
Unit Weight:
0.015839 oz
Tags
FCMT19, FCMT1, FCMT, FCM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 20.2 A, 199 mΩ, Power88
***ark
PQFN88 PKG, 199mohm, 600V, SuperFET2 - 4LD, PQFN, NON-JEDEC, HV, 8.0X8.0 MM
***nell
MOSFET, N-CH, 20.2A, 600V, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; P
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailoredto minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently,SuperFET II MOSFET is very suitable for the switching power applications such as server/telecom power, adaptor and solarinverter applications.The Power88 package is an ultra-slim surface-mount package (1 mm high) with a low profile and small footprint (8x8 mm2).SuperFET II MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductanceand separated power and drive sources. Power88 offers Moisture Sensitivity Level 1 (MSL 1).
Part # Mfg. Description Stock Price
FCMT199N60
DISTI # V36:1790_06337772		ON SemiconductorPQFN88 PKG, 199MOHM, 600V, SUP0
  • 3000000:$1.0830
  • 1500000:$1.0850
  • 300000:$1.1700
  • 30000:$1.2980
  • 3000:$1.3180
FCMT199N60
DISTI # FCMT199N60TR-ND		ON SemiconductorMOSFET N-CH 600V 20.2A POWER88
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 6000:$1.2694
  • 3000:$1.3183
FCMT199N60
DISTI # FCMT199N60CT-ND		ON SemiconductorMOSFET N-CH 600V 20.2A POWER88
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.4584
  • 500:$1.7601
  • 100:$2.1423
  • 10:$2.6650
  • 1:$2.9700
FCMT199N60
DISTI # FCMT199N60DKR-ND		ON SemiconductorMOSFET N-CH 600V 20.2A POWER88
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.4584
  • 500:$1.7601
  • 100:$2.1423
  • 10:$2.6650
  • 1:$2.9700
FCMT199N60
DISTI # FCMT199N60		ON SemiconductorTrans MOSFET N-CH 600V 20.2A 4-Pin Power 88 T/R - Tape and Reel (Alt: FCMT199N60)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 12000:$1.0900
  • 18000:$1.0900
  • 30000:$1.0900
  • 3000:$1.1900
  • 6000:$1.1900
FCMT199N60
DISTI # FCMT199N60		ON SemiconductorTrans MOSFET N-CH 600V 20.2A 4-Pin Power 88 T/R (Alt: FCMT199N60)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€1.0779
  • 18000:€1.1549
  • 12000:€1.2439
  • 6000:€1.3469
  • 3000:€1.6169
FCMT199N60
DISTI # 38X5342		ON SemiconductorSF2 600V 199MOHM F PQFN88 / REEL0
  • 30000:$1.5900
  • 18000:$1.6100
  • 12000:$1.6800
  • 6000:$1.8000
  • 3000:$1.9300
  • 1:$2.0200
FCMT199N60
DISTI # 07AH3882		ON SemiconductorMOSFET, N-CH, 20.2A, 600V, PQFN,Transistor Polarity:N Channel,Continuous Drain Current Id:20.2A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.17ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes0
  • 1000:$1.3500
  • 500:$1.6400
  • 250:$1.7600
  • 100:$1.8800
  • 50:$2.0300
  • 25:$2.1900
  • 10:$2.3400
  • 1:$2.7600
FCMT199N60
DISTI # 512-FCMT199N60		ON SemiconductorMOSFET 199mohm 600V SuperFET2
RoHS: Compliant		68
  • 1:$2.7300
  • 10:$2.3200
  • 100:$1.8600
  • 500:$1.6200
  • 1000:$1.3400
  • 3000:$1.2500
  • 6000:$1.2000
FCMT199N60
DISTI # 3004008		ON SemiconductorMOSFET, N-CH, 20.2A, 600V, PQFN
RoHS: Compliant		0
  • 1000:$2.6600
  • 500:$2.9000
  • 250:$3.1900
  • 100:$3.5500
  • 10:$3.9800
  • 1:$4.5600
FCMT199N60
DISTI # 3004008		ON SemiconductorMOSFET, N-CH, 20.2A, 600V, PQFN0
  • 500:£1.1800
  • 250:£1.3000
  • 100:£1.4000
  • 10:£1.7000
  • 1:£2.1800
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Availability
Stock:
Available
On Order:
1000
Enter Quantity:
Current price of FCMT199N60 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$2.73
$2.73
10
$2.32
$23.20
100
$1.86
$186.00
500
$1.62
$810.00
1000
$1.34
$1 340.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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