FCMT19

FCMT199N60 vs FCMT190N60 vs FCMT190N65F-E

 
PartNumberFCMT199N60FCMT190N60FCMT190N65F-E
DescriptionMOSFET 199mohm 600V SuperFET2
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePower-88-4--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current20.2 A--
Rds On Drain Source Resistance199 mOhms--
Vgs Gate Source Voltage20 V, 30 V--
Qg Gate Charge57 nC--
Minimum Operating Temperature- 50 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation208 W--
TradenameSuperFET II--
PackagingReel--
Height1.1 mm--
Length8 mm--
SeriesFCMT199N60--
Width8 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min20 S--
Fall Time5 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time64 ns--
Typical Turn On Delay Time20 ns--
Unit Weight0.015839 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FCMT199N60 MOSFET 199mohm 600V SuperFET2
FCMT190N60 New and Original
FCMT190N65F-E New and Original
ON Semiconductor
ON Semiconductor
FCMT199N60 MOSFET N-CH 600V 20.2A POWER88
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