PartNumber | FCMT199N60 | FCMT190N60 | FCMT190N65F-E |
Description | MOSFET 199mohm 600V SuperFET2 | ||
Manufacturer | ON Semiconductor | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | Power-88-4 | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 600 V | - | - |
Id Continuous Drain Current | 20.2 A | - | - |
Rds On Drain Source Resistance | 199 mOhms | - | - |
Vgs Gate Source Voltage | 20 V, 30 V | - | - |
Qg Gate Charge | 57 nC | - | - |
Minimum Operating Temperature | - 50 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 208 W | - | - |
Tradename | SuperFET II | - | - |
Packaging | Reel | - | - |
Height | 1.1 mm | - | - |
Length | 8 mm | - | - |
Series | FCMT199N60 | - | - |
Width | 8 mm | - | - |
Brand | ON Semiconductor / Fairchild | - | - |
Forward Transconductance Min | 20 S | - | - |
Fall Time | 5 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 10 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 64 ns | - | - |
Typical Turn On Delay Time | 20 ns | - | - |
Unit Weight | 0.015839 oz | - | - |