IPI60R099CPA

Mfr. #:: IPI60R099CPA
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 600V 31A I2PAK-3 CoolMOS CPA
Lifecycle:: New from this manufacturer.
Datasheet:: IPI60R099CPA Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: IPI60R099CPA more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-262-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 31 A

Rds On - Drain-Source Resistance:: 199 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 255 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: CoolMOS

Packaging:: Tube

Height:: 9.45 mm

Length:: 10.2 mm

Product:: MOSFET Power

Series:: CoolMOS CPA

Transistor Type:: 1 N-Channel

Width:: 4.5 mm

Brand:: Infineon Technologies

Fall Time:: 5 ns

Product Type:: MOSFET

Rise Time:: 5 ns

Factory Pack Quantity:: 500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 60 ns

Typical Turn-On Delay Time:: 10 ns

Part # Aliases:: IPI60R099CPAAKSA1 IPI6R99CPAXK SP000315454

Unit Weight:: 0.084199 oz

Tags: IPI60R099CPA, IPI60R0, IPI60R, IPI60, IPI6, IPI

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPI60R099CPA Description

*** Source Electronics: Trans MOSFET N-CH 600V 31A Automotive 3-Pin(3+Tab) TO-262 Tube / CoolMOS Power Transistor

***ineon SCT: Infineon's CoolMOS™ CPA Superjunction MOSFET is specifically designed for DC-DC converters for automotive application, PG-TO262-3-3, RoHS

***hard Electronics: Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

***ark: MOSFET, N, TO-262; Transistor Type:Power MOSFET; Voltage, Vds Typ:600V; Current, Id Cont:31A; Resistance, Rds On:0.099ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-262; Temperature, Operating RoHS Compliant: Yes

***ineon: Summary of Features: Worldwide best R ds,on in TO220; Ultra low gate charge; Extreme dv/dt rated; High peak current capability; Automotive AEC Q101 qualified; Green package (RoHS compliant); CoolMOS CPA is specially designed for:; DC/DC converters for Automotive Application

***et Europe: Trans MOSFET N-CH 650V 38A 3-Pin TO-262 Tube

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO262-3-3, RoHS

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***icroelectronics: N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in I2PAKFP package

***et: Trans MOSFET N-CH 600V 34A 3-Pin I2PAK FP Tube

***o-Tech: MOSFET N-Ch 600V 34A MDmesh II PlusTO247

***ical: Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-262 Tube

***ineon: CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power

***ark: MOSFET, N, TO-262; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:650V; Current, Id Cont:25A; On State Resistance:0.125ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:650V; On Resistance Rds(on):125mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:25A; Package / Case:TO-262; Power Dissipation Pd:208W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in I2PAK package

***r Electronics: Power Field-Effect Transistor, 32A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***et: Trans MOSFET N-CH 650V 32A 3-Pin I2PAK Tube

***el Electronic: LDO Voltage Regulators 200mA,Low IQ,Low- Noise,LDO Reg

***icroelectronics: N-channel 650 V, 0.070 Ohm, 33 A MDmesh(TM) V Power MOSFET in I2PAK

***ure Electronics: STI42N65M5 Series 650 V 79 mOhm N-Channel MDmesh V Power MOSFET - I2PAK-3

***r Electronics: Power Field-Effect Transistor, 33A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

***ment14 APAC: MOSFET, N CH, 650V, 33A, I2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.079ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:190W; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)

***emi: N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 25 A, 125 mΩ, I2PAK

***r Electronics: Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

***nell: MOSFET, N CH, 600V, 25A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.107ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:216W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-262; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***el Electronic: Aluminum Electrolytic Capacitors 470μF Radial, Can ±20% Tape & Box (TB) FC 0.532 13.50mm Through Hole Automotive 755mA Cap Aluminum Lytic 470uF 16V 20% (10 X 12.5mm) Radial 5mm 755mA 3000h 105C Ammo Pack

***rchild Semiconductor: The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

IPI60R099CPA More Information

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

Part #	Mfg.	Description	Stock	Price
IPI60R099CPAAKSA1 DISTI # V36:1790_06377195	Infineon Technologies AG	Trans MOSFET N-CH 600V 31A Automotive 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant	0
IPI60R099CPXKSA1 DISTI # IPI60R099CPXKSA1-ND	Infineon Technologies AG	MOSFET N-CH 60V 31A TO-262 RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call	500:$5.0354
IPI60R099CPAAKSA1 DISTI # IPI60R099CPAAKSA1-ND	Infineon Technologies AG	MOSFET N-CH 60V 31A TO-262 RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call	500:$5.0488
IPI60R099CPA DISTI # SP000315454	Infineon Technologies AG	Trans MOSFET N-CH 600V 31A 3-Pin TO-262 Tube (Alt: SP000315454) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€3.3900 100:€3.4900 500:€3.4900 50:€3.5900 10:€3.7900 25:€3.7900 1:€3.8900
IPI60R099CPAXK DISTI # IPI60R099CPAAKSA1	Infineon Technologies AG	Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI60R099CPAAKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	5000:$3.6900 3000:$3.7900 2000:$3.8900 1000:$4.0900 500:$4.1900
IPI60R099CPA DISTI # 726-IPI60R099CPA	Infineon Technologies AG	MOSFET N-Ch 600V 31A I2PAK-3 CoolMOS CPA RoHS: Compliant	490	1:$7.0400 10:$6.3600 25:$6.0700 100:$5.2700 250:$5.0300 500:$4.5900 1000:$3.9900

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	Mfr.#: 53261-0471 OMO.#: OMO-53261-0471-410	Headers & Wire Housings 1.25MM HDR 4 CKT Right-Angle

IPI60R099CPA

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes