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FDB2614

FDB2614
Mfr. #:
FDB2614
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 200V N-Channel PowerTrench MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
FDB2614 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
FDB2614 more Information
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current:
62 A
Rds On - Drain-Source Resistance:
22.9 mOhms
Vgs - Gate-Source Voltage:
30 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
260 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
PowerTrench
Packaging:
Reel
Height:
4.83 mm
Length:
10.67 mm
Series:
FDB2614
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
9.65 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
72 S
Fall Time:
162 ns
Product Type:
MOSFET
Rise Time:
284 ns
Factory Pack Quantity:
800
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
103 ns
Typical Turn-On Delay Time:
77 ns
Unit Weight:
0.046296 oz
Tags
FDB26, FDB2, FDB
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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 200 V 27 mOhm Surface Mount PowerTrench Mosfet - D2PAK-3
***Semiconductor
N-Channel PowerTrench® MOSFET 200V, 62A, 27mΩ
***et Europe
Trans MOSFET N-CH 200V 62A 3-Pin(2+Tab) D2PAK T/R
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***ment14 APAC
MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:200V; On Resistance Rds(on):22.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:260W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Id Max:62A; Package / Case:D2-PAK; Power Dissipation Pd:260W; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Part # Mfg. Description Stock Price
FDB2614
DISTI # V72:2272_06300946		ON Semiconductor200V , 62A, NCH POWER TRENCH M80
  • 25:$3.3170
  • 10:$3.6860
  • 1:$4.7553
FDB2614
DISTI # V36:1790_06300946		ON Semiconductor200V , 62A, NCH POWER TRENCH M0
  • 800000:$1.8380
  • 400000:$1.8400
  • 80000:$2.0340
  • 8000:$2.3650
  • 800:$2.4200
FDB2614
DISTI # FDB2614CT-ND		ON SemiconductorMOSFET N-CH 200V 62A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2674In Stock
  • 100:$2.9618
  • 10:$3.6150
  • 1:$4.0200
FDB2614
DISTI # FDB2614DKR-ND		ON SemiconductorMOSFET N-CH 200V 62A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2674In Stock
  • 100:$2.9618
  • 10:$3.6150
  • 1:$4.0200
FDB2614
DISTI # FDB2614TR-ND		ON SemiconductorMOSFET N-CH 200V 62A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		1600In Stock
  • 2400:$1.9612
  • 1600:$2.0645
  • 800:$2.4479
FDB2614
DISTI # 33954801		ON Semiconductor200V , 62A, NCH POWER TRENCH M80000
  • 800:$1.2388
FDB2614
DISTI # 33614106		ON Semiconductor200V , 62A, NCH POWER TRENCH M1600
  • 800:$1.5747
FDB2614
DISTI # 26604896		ON Semiconductor200V , 62A, NCH POWER TRENCH M80
  • 4:$4.7553
FDB2614
DISTI # FDB2614		ON SemiconductorTrans MOSFET N-CH 200V 62A 3-Pin(2+Tab) D2PAK T/R (Alt: FDB2614)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Asia - 0
  • 40000:$2.0020
  • 20000:$2.0353
  • 8000:$2.1055
  • 4000:$2.1807
  • 2400:$2.2615
  • 1600:$2.3485
  • 800:$2.4424
FDB2614
DISTI # FDB2614		ON SemiconductorTrans MOSFET N-CH 200V 62A 3-Pin(2+Tab) D2PAK T/R (Alt: FDB2614)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Europe - 0
  • 8000:€1.3900
  • 4800:€1.4900
  • 1600:€1.5900
  • 3200:€1.5900
  • 800:€1.6900
FDB2614
DISTI # FDB2614		ON SemiconductorTrans MOSFET N-CH 200V 62A 3-Pin(2+Tab) D2PAK T/R - Bulk (Alt: FDB2614)
RoHS: Compliant
Min Qty: 146
Container: Bulk		Americas - 0
  • 730:$2.0900
  • 1460:$2.0900
  • 146:$2.1900
  • 292:$2.1900
  • 438:$2.1900
FDB2614
DISTI # FDB2614		ON SemiconductorTrans MOSFET N-CH 200V 62A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB2614)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 3200:$1.7900
  • 4800:$1.7900
  • 8000:$1.7900
  • 800:$1.8900
  • 1600:$1.8900
FDB2614
DISTI # 61M6192		ON SemiconductorMOSFET Transistor, N Channel, 62 A, 200 V, 22.9 mohm, 10 V, 4 V RoHS Compliant: Yes1121
  • 500:$3.1700
  • 250:$3.4900
  • 100:$3.6500
  • 50:$3.8100
  • 25:$3.9800
  • 10:$4.1400
  • 1:$4.8100
FDB2614
DISTI # 30M0734		ON SemiconductorN CHANNEL MOSFET, 200V, 62A, D2-PAK, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:62A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0229ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V RoHS Compliant: Yes0
  • 4800:$2.2300
  • 3200:$2.3100
  • 1600:$2.3500
  • 800:$2.3800
  • 1:$2.4200
FDB2614
DISTI # 512-FDB2614		ON SemiconductorMOSFET 200V N-Channel PowerTrench MOSFET
RoHS: Compliant		1382
  • 1:$4.3600
  • 10:$3.7100
  • 100:$3.2100
  • 250:$3.0500
  • 500:$2.7300
FDB2614Fairchild Semiconductor CorporationPower Field-Effect Transistor, 62A I(D), 200V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		15135
  • 1000:$2.2600
  • 500:$2.3800
  • 100:$2.4800
  • 25:$2.5900
  • 1:$2.7900
FDB2614DKRFairchild Semiconductor Corporation 51
    FDB2614
    DISTI # 7598967P    		ON SemiconductorMOSFET N-CHANNEL 200V 62A D2PAK, RL939
    • 10:£2.1100
    FDB2614
    DISTI # FDB2614    		ON SemiconductorTransistor: N-MOSFET,unipolar,200V,62A,260W,D2PAK1483
    • 500:$2.2400
    • 100:$2.4000
    • 25:$2.6700
    • 5:$3.0200
    • 1:$3.3600
    FDB2614DKRFairchild Semiconductor Corporation 
    RoHS: Compliant    		52
      FDB2614
      DISTI # 1495274RL      		ON SemiconductorMOSFET, N, SMD, TO-263
      RoHS: Compliant      		0
      • 800:$4.1200
      • 500:$4.2000
      • 250:$4.7000
      • 100:$4.9400
      • 10:$5.7100
      • 1:$6.7100
      FDB2614
      DISTI # 1495274      		ON SemiconductorMOSFET, N, SMD, TO-263
      RoHS: Compliant      		1048
      • 800:$4.1200
      • 500:$4.2000
      • 250:$4.7000
      • 100:$4.9400
      • 10:$5.7100
      • 1:$6.7100
      FDB2614
      DISTI # 1495274      		ON SemiconductorMOSFET, N, SMD, TO-2633154
      • 500:£2.1200
      • 250:£2.3700
      • 100:£2.5000
      • 10:£2.8900
      • 1:£3.7900
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      RB238NS150FHTL

      Mfr.#: RB238NS150FHTL

      OMO.#: OMO-RB238NS150FHTL

      		 Schottky Diodes & Rectifiers 150V Vr 40A Io SBD TO-263S(D2PAK) 20A
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      OMO.#: OMO-LM4040DIM3-10-0-NOPB-TEXAS-INSTRUMENTS

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      BZT52C13-7-F

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      OMO.#: OMO-BZT52C13-7-F-DIODES

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      Availability
      Stock:
      Available
      On Order:
      1984
      Enter Quantity:
      Current price of FDB2614 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $4.36
      $4.36
      10
      $3.71
      $37.10
      100
      $3.21
      $321.00
      250
      $3.05
      $762.50
      500
      $2.73
      $1 365.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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