OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IRG4PC30UPBF

IRG4PC30UPBF
Mfr. #:
IRG4PC30UPBF
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 600V ULTRAFAST 8-60KHZ DSCRETE IGBT
Lifecycle:
New from this manufacturer.
Datasheet:
IRG4PC30UPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRG4PC30UPBF DatasheetIRG4PC30UPBF Datasheet (P4-P6)IRG4PC30UPBF Datasheet (P7-P9)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-247-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
600 V
Collector-Emitter Saturation Voltage:
2.1 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
23 A
Pd - Power Dissipation:
100 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Packaging:
Tube
Continuous Collector Current Ic Max:
23 A
Height:
20.3 mm
Length:
15.9 mm
Width:
5.3 mm
Brand:
Infineon Technologies
Product Type:
IGBT Transistors
Factory Pack Quantity:
400
Subcategory:
IGBTs
Part # Aliases:
SP001536064
Unit Weight:
1.340411 oz
Tags
IRG4PC30U, IRG4PC3, IRG4PC, IRG4P, IRG4, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronics
INFINEON IRG4PC30U IGBT Single Transistor, 23 A, 2.5 V, 100 W, 600 V, TO-247, 3 Pins
***ineon SCT
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:23A; Collector Emitter Saturation Voltage, Vce(sat):2.1V; Power Dissipation, Pd:100W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***nell
IGBT, TO-247; DC Collector Current: 23A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 100W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 23A; Current Temperature: 25°C; Fall Time Max: 97ns; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 100W; Pulsed Current Icm: 92A; Rise Time: 9.6ns; Transistor Polarity: N Channel; Transistor Type: IGBT
***el Electronic
Inductor RF Chip Thin Film 16nH 3% 500MHz 12Q-Factor 200mA 950mOhm DCR 0201 T/R
***ure Electronics
IRG4PC30KDPBF Series 600 V 16 A N-Channel UltraFast IGBT - TO-247AC
*** Source Electronics
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) | IGBT 600V 28A 100W TO247AC
***ark
IGBT; Transistor Type:IGBT; Continuous Collector Current, Ic:28A; Power Dissipation, Pd:100W; Collector Emitter Voltage, V(br)ceo:600V; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Leaded Process Compatible:No RoHS Compliant: No
***ment14 APAC
IGBT, W/DIODE, 1200V, 60A, TO247AC; Transistor Type:IGBT; DC Collector Current:28A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:28A; Fall Time Max:120ns; Package / Case:TO-247AC; Power Dissipation Max:100W; Power Dissipation Pd:100W; Pulsed Current Icm:58A; Rise Time:42ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***Yang
TO-247, COMP, N-CH 600V SMPS II SERIES IGBT W/STEALTH DIODE - Bulk
***i-Key
IGBT N-CH SMPS 600V 28A TO247
***ser
IGBTs Comp, N-Ch 600V
***i-Key Marketplace
N-CHANNEL IGBT
***el Nordic
Contact for details
***et
TO-247, SINGLE, N-CHANNEL 600V SMPS II SERIES IGBT
***i-Key
IGBT 600V 28A 125W TO247
***ser
IGBTs Sgl, N-Ch 600V
***i-Key Marketplace
N-CHANNEL IGBT
***el Nordic
Contact for details
***ure Electronics
IRG4PC30 Series 600 V 17 A N-Channel Fast CoPack IGBT - TO-247AC
***ineon SCT
600V Fast 1-8 kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.59 V Current release time: 83 ns Power dissipation: 100 W
***nell
IGBT, SINGLE, N-CH, 600V, 31A, TO-247AC; DC Collector Current: 31A; Collector Emitter Saturation Voltage Vce(on): 1.99V; Power Dissipation Pd: 100W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AC; N
***ineon SCT
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***ow.cn
Trans IGBT Chip N-CH 600V 31A 100000mW 3-Pin(3+Tab) TO-247AC Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC
***ineon
Target Applications: Air Conditioner; Fan; Pump; Refridgeration
***ure Electronics
1-5 kHz Higher Efficiency Through Hole IGBT - TO-247-3
*** Electronic Components
IGBT Transistors 600V Fast 1-8kHz
***i-Key Marketplace
IRG4PC30 - DISCRETE IGBT WITHOUT
***nell
IGBT, 600V, 31A, TO-247AC; Transistor Type:IGBT; Transistor Polarity:N; Current Ic Continuous a Max:31A; Voltage, Vce Sat Max:1.9V; Power Dissipation:100W; Case Style:TO-247AC; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:120A; No. of Pins:3; Power, Pd:100W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:180ns; Time, Rise:15ns; Transistors, No. of:1
***ical
Trans IGBT Chip N-CH 600V 34A 3-Pin(3+Tab) TO-247 Rail
***nell
IGBT, N, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:34A; Voltage, Vce Sat Max:2.7V; Power Dissipation:125W; Case Style:TO-247; Termination Type:Through Hole; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:56A; No. of Pins:3; Power, Pd:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:45ns; Time, Fall Typ:45ns; Time, Rise:11ns; Transistors, No. of:1
***rchild Semiconductor
The HGTP7N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
Part # Mfg. Description Stock Price
IRG4PC30UPBF
DISTI # 30560295		Infineon Technologies AGTrans IGBT Chip N-CH 600V 23A 100000mW 3-Pin(3+Tab) TO-247AC Tube17265
  • 2500:$1.7136
  • 1000:$1.8043
  • 500:$2.1370
  • 250:$2.3789
  • 100:$2.5099
  • 10:$2.8930
IRG4PC30UPBF
DISTI # IRG4PC30UPBF-ND		Infineon Technologies AGIGBT 600V 23A 100W TO247AC
RoHS: Compliant
Min Qty: 4000
Container: Bag		Limited Supply - Call
  • 4000:$1.7821
IRG4PC30UPBF
DISTI # SP001536064		Infineon Technologies AGTrans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-247AC (Alt: SP001536064)
RoHS: Compliant
Min Qty: 1		Europe - 3300
  • 1:€1.8900
  • 10:€1.6900
  • 25:€1.5900
  • 50:€1.4900
  • 100:€1.4900
  • 500:€1.3900
  • 1000:€1.2900
IRG4PC30UPBF
DISTI # IRG4PC30UPBF		Infineon Technologies AGTrans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRG4PC30UPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tube		Americas - 0
  • 4000:$1.6900
  • 4800:$1.6900
  • 8800:$1.5900
  • 20000:$1.4900
  • 40000:$1.4900
IRG4PC30UPBF
DISTI # 63J7513		Infineon Technologies AGSINGLE IGBT, 600V, 23A,DC Collector Current:23A,Collector Emitter Saturation Voltage Vce(on):2.52V,Power Dissipation Pd:100W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- , RoHS Compliant: Yes878
  • 1:$3.3700
  • 10:$2.8700
  • 25:$2.7400
  • 50:$2.6200
  • 100:$2.4900
  • 250:$2.3600
  • 500:$2.1200
IRG4PC30UPBF
DISTI # 70017607		Infineon Technologies AG600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE
RoHS: Compliant		0
  • 4000:$2.5810
IRG4PC30UPBFInternational Rectifier 
RoHS: Not Compliant		4460
  • 1000:$1.6200
  • 500:$1.7000
  • 100:$1.7700
  • 25:$1.8500
  • 1:$1.9900
IRG4PC30UPBF
DISTI # 942-IRG4PC30UPBF		Infineon Technologies AGIGBT Transistors 600V ULTRAFAST 8-60KHZ DSCRETE IGBT
RoHS: Compliant		3704
  • 1:$3.3700
  • 10:$2.8700
  • 100:$2.4900
  • 250:$2.3600
  • 500:$2.1200
  • 1000:$1.7900
  • 2500:$1.7000
IRG4PC30UPBF
DISTI # 5410890		Infineon Technologies AGTRANSISTOR IGBT N-CH 600V 23A TO247AC, EA426
  • 1:£2.2300
  • 10:£2.1500
  • 20:£2.0600
IRG4PC30UPBF
DISTI # IRG4PC30UPBF		Infineon Technologies AGTransistor: IGBT,600V,23A,100W,TO247-355
  • 1:$3.0600
  • 3:$2.7100
  • 10:$2.2300
  • 50:$1.9400
IRG4PC30UPBFInternational Rectifier 
RoHS: Compliant		Europe - 2875
    IRG4PC30UPBF
    DISTI # 8650500    		Infineon Technologies AGIGBT, 600V, 23A, TO-247AC
    RoHS: Compliant    		203
    • 1:£2.2700
    • 10:£2.1000
    • 100:£1.9300
    • 250:£1.8300
    • 500:£1.6300
    IRG4PC30UPBF
    DISTI # C1S322000604416    		Infineon Technologies AGIGBT Chip
    RoHS: Compliant    		17265
    • 1000:$1.8200
    • 500:$1.9600
    • 100:$2.5700
    • 50:$2.8000
    • 10:$3.4000
    • 1:$5.2500
    IRG4PC30UPBF
    DISTI # 8650500    		Infineon Technologies AGIGBT, 600V, 23A, TO-247AC
    RoHS: Compliant    		273
    • 1:$5.3400
    • 10:$4.5500
    • 100:$3.9400
    • 250:$3.7400
    • 500:$3.3500
    • 1000:$2.8400
    • 2500:$2.7900
    Image Part # Description
    MC34072DR2G

    Mfr.#: MC34072DR2G

    OMO.#: OMO-MC34072DR2G

    		 Operational Amplifiers - Op Amps 3-44V Dual 5mV VIO Commercial Temp
    BC846BLT1G

    Mfr.#: BC846BLT1G

    OMO.#: OMO-BC846BLT1G

    		 Bipolar Transistors - BJT 100mA 80V NPN
    1N5919BG

    Mfr.#: 1N5919BG

    OMO.#: OMO-1N5919BG

    		 Zener Diodes 5.6V 3W
    STGF3NC120HD

    Mfr.#: STGF3NC120HD

    OMO.#: OMO-STGF3NC120HD

    		 IGBT Transistors N-Ch 1200 Volt 3 Amp
    2N7000

    Mfr.#: 2N7000

    OMO.#: OMO-2N7000

    		 MOSFET N-CHANNEL 60V 200mA
    FQP30N06L

    Mfr.#: FQP30N06L

    OMO.#: OMO-FQP30N06L

    		 MOSFET 60V N-Channel QFET Logic Level
    IRFP450PBF

    Mfr.#: IRFP450PBF

    OMO.#: OMO-IRFP450PBF

    		 MOSFET N-CH 500V HEXFET MOSFET
    74HC423D,653

    Mfr.#: 74HC423D,653

    OMO.#: OMO-74HC423D-653

    		 Monostable Multivibrator DUAL RETRIG MONO MULTIVIBRATOR
    1N5919BG

    Mfr.#: 1N5919BG

    OMO.#: OMO-1N5919BG-ON-SEMICONDUCTOR

    		 Zener Diodes 5.6V 3W
    MC34072DR2G

    Mfr.#: MC34072DR2G

    OMO.#: OMO-MC34072DR2G-ON-SEMICONDUCTOR

    		 Operational Amplifiers - Op Amps 3-44V Dual 5mV VIO Commercial Temp
    Availability
    Stock:
    Available
    On Order:
    1986
    Enter Quantity:
    Current price of IRG4PC30UPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $3.37
    $3.37
    10
    $2.87
    $28.70
    100
    $2.49
    $249.00
    250
    $2.36
    $590.00
    500
    $2.12
    $1 060.00
    1000
    $1.79
    $1 790.00
    2500
    $1.70
    $4 250.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
    Start with
    Newest Products
    More Newest Products
    Top