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RGTH00TS65GC11

RGTH00TS65GC11
Mfr. #:
RGTH00TS65GC11
Manufacturer:
Rohm Semiconductor
Description:
IGBT Transistors 650V 50A IGBT Stop Trench
Lifecycle:
New from this manufacturer.
Datasheet:
RGTH00TS65GC11 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
RGTH00TS65GC11 more Information
Product Attribute
Attribute Value
Manufacturer:
ROHM Semiconductor
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-247-3
Mounting Style:
Through Hole
Collector- Emitter Voltage VCEO Max:
650 V
Collector-Emitter Saturation Voltage:
1.6 V
Maximum Gate Emitter Voltage:
30 V
Continuous Collector Current at 25 C:
85 A
Pd - Power Dissipation:
277 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 175 C
Series:
RGTH00TS65
Packaging:
Tube
Continuous Collector Current Ic Max:
85 A
Operating Temperature Range:
- 40 C to + 175 C
Brand:
ROHM Semiconductor
Continuous Collector Current:
50 A
Gate-Emitter Leakage Current:
+/- 200 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
450
Subcategory:
IGBTs
Part # Aliases:
RGTH00TS65
Unit Weight:
1.340411 oz
Tags
RGTH00TS, RGTH0, RGTH, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans IGBT Chip N-CH 650V 85A 3-Pin TO-247N Tube
***ark
Igbt, Single, 650V, 85A, To-247N-3 Rohs Compliant: Yes
***nell
IGBT, SINGLE, 650V, 85A, TO-247N-3; DC Collector Current: 85A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 277W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247N; No. of P
***i-Key
IGBT TRNCH FIELD 650V 85A TO247N
***ical
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
***r Electronics
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
***ark
Transistor, Igbt, 650V, 80A, To-247 Rohs Compliant: Yes
*** Electronic Components
IGBT Transistors 650V 40A Trench Gate Field-Stop IGBT
***(Formerly Allied Electronics)
IGBT N-Ch 650V 40A High-Speed TO247
***icroelectronics SCT
Short-circuit rugged IGBT, TO-247, Tube
*** Services
CoC and 2-years warranty / RFQ for pricing
***id Electronics
ST MICROELECTRONICS STGW40H65FB
***ure Electronics
NGTB Series 650 V 60 A Flange Mount Trench Field Stop IGBT - TO-247
***et
Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube
***emi
IGBT, 650V 30A FS2 Induction Heating
***ark
650V/30A FAST IGBT FSII TO-247 / TUBE ROHS COMPLIANT: YES
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***i-Key
IGBT TRENCH/FS 650V 60A TO247-3
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
***ical
Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 650V, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pin
***ical
Trans IGBT Chip N-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, 650V, 40A, TO220-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 255W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins;
***ineon SCT
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO220-3, RoHS
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
***ical
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
***nell
IGBT, SINGLE, 650V, 80A, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 283W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins:
***ical
Trans IGBT Chip N=-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube
*** Source Electronics
650V DuoPack IGBT and Diode High speed switching series fifth generation
***ineon SCT
650 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
***nell
IGBT, 650V, 50A, TO247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 305W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins;
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
Part # Mfg. Description Stock Price
RGTH00TS65GC11
DISTI # RGTH00TS65GC11-ND		ROHM SemiconductorIGBT 650V 85A 277W TO-247N
RoHS: Compliant
Min Qty: 1
Container: Tube		256In Stock
  • 2520:$1.9740
  • 510:$2.3406
  • 120:$2.7495
  • 30:$3.1727
  • 10:$3.3560
  • 1:$3.7400
RGTH00TS65GC11
DISTI # RGTH00TS65GC11		ROHM SemiconductorTrans IGBT Chip N-CH 650V 85A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGTH00TS65GC11)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 2700:$1.7900
  • 4500:$1.7900
  • 1800:$1.8900
  • 900:$1.9900
  • 450:$2.1900
RGTH00TS65GC11
DISTI # 755-RGTH00TS65GC11		ROHM SemiconductorIGBT Transistors 650V 50A IGBT Stop Trench
RoHS: Compliant		409
  • 1:$3.7400
  • 10:$3.1800
  • 100:$2.7500
  • 250:$2.6100
  • 500:$2.3500
  • 1000:$1.9800
  • 2500:$1.8800
RGTH00TS65GC11ROHM Semiconductor*** FREE SHIPPING ORDERS OVER $100 ***24
  • 19:$3.8800
  • 6:$4.2680
  • 1:$5.8200
RGTH00TS65GC11
DISTI # 1486976		ROHM SemiconductorIGBT N-CHANNEL 85A 650V TRENCH TO-247, PK15
  • 500:£1.9700
  • 250:£2.0860
  • 100:£2.2320
  • 25:£2.5500
  • 5:£2.8980
RGTH00TS65GC11
DISTI # 2519787		ROHM SemiconductorIGBT, SINGLE, 650V, 85A, TO-247N-3
RoHS: Compliant		4
  • 510:$3.5500
  • 270:$3.9600
  • 120:$4.1800
  • 30:$4.8200
  • 10:$5.0900
  • 1:$5.6700
RGTH00TS65GC11
DISTI # 2519787		ROHM SemiconductorIGBT, SINGLE, 650V, 85A, TO-247N-3
RoHS: Compliant		4
  • 500:£1.6500
  • 250:£1.8300
  • 100:£1.9300
  • 10:£2.2300
  • 1:£2.9400
RGTH00TS65GC11ROHM Semiconductor 450
  • 1:¥44.2642
  • 100:¥25.0978
  • 450:¥15.9120
RGTH00TS65GC11ROHM SemiconductorIGBT Transistors 650V 50A IGBT Stop Trench
RoHS: Compliant		Americas -
    RGTH00TS65GC11ROHM SemiconductorRoHS(ship within 1day)30
    • 1:$3.8200
    • 10:$2.8600
    • 50:$2.5200
    • 100:$2.1500
    • 500:$2.0000
    • 1000:$1.9400
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    OMO.#: OMO-RGTH80TS65DGC11-ROHM-SEMI

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    Availability
    Stock:
    389
    On Order:
    2372
    Enter Quantity:
    Current price of RGTH00TS65GC11 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $3.74
    $3.74
    10
    $3.18
    $31.80
    100
    $2.75
    $275.00
    250
    $2.61
    $652.50
    500
    $2.35
    $1 175.00
    1000
    $1.98
    $1 980.00
    2500
    $1.88
    $4 700.00
    5000
    $1.81
    $9 050.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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