RGS50TSX2DHRC11

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

IGBT Transistors

RoHS:

Y

Technology:

Si

Package / Case:

TO-247N-3

Mounting Style:

Through Hole

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

1200 V

Collector-Emitter Saturation Voltage:

1.7 V

Maximum Gate Emitter Voltage:

30 V

Continuous Collector Current at 25 C:

50 A

Pd - Power Dissipation:

395 W

Minimum Operating Temperature:

- 40 C

Maximum Operating Temperature:

+ 175 C

Packaging:

Tube

Brand:

ROHM Semiconductor

Gate-Emitter Leakage Current:

500 nA

Product Type:

IGBT Transistors

Factory Pack Quantity:

30

Subcategory:

IGBTs

Tags

RGS50, RGS5, RGS