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IXFN100N50P

IXFN100N50P
Mfr. #:
IXFN100N50P
Manufacturer:
Littelfuse
Description:
MOSFET 500V 100A
Lifecycle:
New from this manufacturer.
Datasheet:
IXFN100N50P Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN100N50P DatasheetIXFN100N50P Datasheet (P4-P5)
ECAD Model:
More Information:
IXFN100N50P more Information
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Chassis Mount
Package / Case:
SOT-227-4
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
500 V
Id - Continuous Drain Current:
90 A
Rds On - Drain-Source Resistance:
49 mOhms
Vgs - Gate-Source Voltage:
30 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
1040 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
HiPerFET
Packaging:
Tube
Height:
9.6 mm
Length:
38.23 mm
Series:
IXFN100N50
Transistor Type:
1 N-Channel
Width:
25.42 mm
Brand:
IXYS
Forward Transconductance - Min:
80 S
Fall Time:
26 ns
Product Type:
MOSFET
Rise Time:
29 ns
Factory Pack Quantity:
10
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
110 ns
Typical Turn-On Delay Time:
36 ns
Unit Weight:
1.058219 oz
Tags
IXFN100N5, IXFN100N, IXFN100, IXFN10, IXFN1, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Part # Mfg. Description Stock Price
IXFN100N50P
DISTI # 33960007		IXYS CorporationTrans MOSFET N-CH 500V 90A 4-Pin SOT-227B
RoHS: Compliant		20
  • 1:$19.3717
IXFN100N50P
DISTI # IXFN100N50P-ND		IXYS CorporationMOSFET N-CH 500V 90A SOT-227B
RoHS: Compliant
Min Qty: 1
Container: Tube		100In Stock
  • 100:$22.9416
  • 30:$24.6840
  • 10:$26.8620
  • 1:$29.0400
IXFN100N50P
DISTI # V36:1790_15877008		IXYS CorporationTrans MOSFET N-CH 500V 90A 4-Pin SOT-227B
RoHS: Compliant		0
  • 10000:$16.9100
  • 5000:$16.9200
  • 1000:$18.8400
  • 100:$23.4200
  • 10:$24.2600
IXFN100N50P
DISTI # V99:2348_15877008		IXYS CorporationTrans MOSFET N-CH 500V 90A 4-Pin SOT-227B
RoHS: Compliant		0
    IXFN100N50P
    DISTI # 58M7617    		IXYS CorporationMOSFET, N CHANNEL, 500V, 0.049OHM, 90A, SOT-227B-4,Transistor Polarity:N Channel,Continuous Drain Current Id:90A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.049ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5VRoHS Compliant: Yes40
    • 250:$21.2600
    • 100:$23.1700
    • 50:$23.8700
    • 25:$24.9300
    • 10:$27.1300
    • 5:$27.8700
    • 1:$29.3300
    IXFN100N50P
    DISTI # 747-IXFN100N50P    		IXYS CorporationMOSFET 500V 100A
    RoHS: Compliant    		68
    • 1:$29.0400
    • 5:$27.5900
    • 10:$26.8600
    • 25:$24.6800
    • 50:$23.6300
    • 100:$22.9400
    • 200:$21.0500
    IXFN100N50P
    DISTI # IXFN100N50P    		IXYS CorporationModule,single transistor,500V,75A,SOT227B,Ugs: ±30V,screw8
    • 10:$24.4400
    • 3:$27.7000
    • 1:$30.7400
    IXFN100N50P
    DISTI # 1427318    		IXYS CorporationMOSFET, N, SOT-227B
    RoHS: Compliant    		0
    • 100:$34.5800
    • 30:$37.2000
    • 10:$40.4900
    • 1:$43.7600
    IXFN100N50P
    DISTI # 1427318    		IXYS CorporationMOSFET, N, SOT-227B0
    • 100:£16.7000
    • 50:£18.7500
    • 10:£19.5800
    • 5:£21.8900
    • 1:£23.0500
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    Availability
    Stock:
    18
    On Order:
    2001
    Enter Quantity:
    Current price of IXFN100N50P is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $29.04
    $29.04
    5
    $27.59
    $137.95
    10
    $26.86
    $268.60
    25
    $24.68
    $617.00
    50
    $23.63
    $1 181.50
    100
    $22.94
    $2 294.00
    200
    $21.05
    $4 210.00
    500
    $20.04
    $10 020.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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