PartNumber | IXFN100N50P | IXFN100N50Q3 | IXFN100N20 |
Description | MOSFET 500V 100A | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/82A | MOSFET 100 Amps 200V 0.023 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
Package / Case | SOT-227-4 | SOT-227-4 | SOT-227-4 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 500 V | 500 V | 200 V |
Id Continuous Drain Current | 90 A | 82 A | 100 A |
Rds On Drain Source Resistance | 49 mOhms | 49 mOhms | 23 mOhms |
Vgs Gate Source Voltage | 30 V | 30 V | 20 V |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 1040 W | 960 W | 520 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | HiPerFET | HiPerFET | HyperFET |
Packaging | Tube | Tube | Tube |
Height | 9.6 mm | - | 9.6 mm |
Length | 38.23 mm | - | 38.23 mm |
Series | IXFN100N50 | IXFN100N50 | IXFN100N20 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 25.42 mm | - | 25.42 mm |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 80 S | - | - |
Fall Time | 26 ns | - | 30 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 29 ns | 250 ns | 80 ns |
Factory Pack Quantity | 10 | 10 | 10 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 110 ns | - | 75 ns |
Typical Turn On Delay Time | 36 ns | - | 30 ns |
Unit Weight | 1.058219 oz | 1.058219 oz | 1.058219 oz |
Qg Gate Charge | - | 255 nC | - |