FDMQ8203

Mfr. #:: FDMQ8203
Manufacturer:: ON Semiconductor / Fairchild
Description:: MOSFET Dual PT5 N-Ch & Dual PT1 PCH PowerTrench
Lifecycle:: New from this manufacturer.
Datasheet:: FDMQ8203 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: FDMQ8203 more Information

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: MLP-12

Number of Channels:: 2 Channel

Transistor Polarity:: N-Channel, P-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V, 80 V

Id - Continuous Drain Current:: 6 A

Rds On - Drain-Source Resistance:: 110 mOhms, 190 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3 V, 1.6 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 2.9 nC, 13 nC

Maximum Operating Temperature:: + 125 C

Pd - Power Dissipation:: 2.5 W

Configuration:: Dual

Tradename:: PowerTrench

Packaging:: Reel

Height:: 0.8 mm

Length:: 5 mm

Series:: FDMQ8203

Transistor Type:: 1 N-Channel, 1 P-Channel

Width:: 4.5 mm

Brand:: ON Semiconductor / Fairchild

Forward Transconductance - Min:: 6 S

Fall Time:: 1.9 ns, 2.7 ns

Product Type:: MOSFET

Rise Time:: 1.3 ns, 2.8 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Unit Weight:: 0.007408 oz

Tags: FDMQ82, FDMQ, FDM

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
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Packaging Boxes

FDMQ8203 Description

***rchild Semiconductor: This quad mosfet solution provides ten-fold improvement in power dissipation over diode bridge.

***Yang: Trans MOSFET N/P-CH 100V/80V 3.4A/2.6A 12-Pin MLP EP T/R - Tape and Reel

***r Electronics: Power Field-Effect Transistor, 3.4A I(D), 100V, 0.11ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***nell: MOSFET, NNPP CH, MLP 4.5X5; Transistor Polarity:Dual N and Dual P Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:22W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:12; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***Yang: Transistor MOSFET Array Dual N-CH 100V 2.7A 8-Pin SOIC T/R - Tape and Reel

***emi: Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 2.7A, 105mΩ

***ure Electronics: 2N-Channel 100 V 2.7 A 105 mOhm Shielded Power Trench Mosfet - SOIC-8

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

***nell: MOSFET, NN CH, 100V, 2.7A, 8SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.086ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***ark: MOSFET, N CH, 100V, 2.7A, SSOT-3; Transistor Polarity:N Channel; Continuous Drai

***ure Electronics: FDN8601 Series 100 V 2.7 A 109 mOhm N-Ch PowerTrench Mosfet - SuperSOT-3

***emi: N-Channel PowerTrench® MOSFET 100V, 2.7A, 109mΩ

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

***nell: MOSFET, N CH, 100V, 2.7A, SSOT-3; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0854ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SuperSOT; No. of Pins:3; MSL:MSL 1 - Unlimited

***emi: N-Channel Shielded Gate Power Trench® MOSFET, 100 V, 2.7 A, 109 mΩ

***ure Electronics: FDC8601 Series 100 V 109 mOhm N-Channel Shielded Gate PowerTrench Mosfet -SSOT-6

***r Electronics: Small Signal Field-Effect Transistor, 2.7A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

***(Formerly Allied Electronics): MOSFET; N-Ch; Vds 60V; Vgs +/- 20V; Rds(on) 82mohm; Id 3.2A; TSOP-6; Pd 2W

***ure Electronics: N-Channel 60 V 0.01 Ohm 3.3 W Surface Mount Power Mosfet - TSOP-6

*** Source Electronics: Trans MOSFET N-CH 60V 3.2A 6-Pin TSOP T/R / MOSFET N-CH 60V 4.1A 6-TSOP

***p One Stop Global: Trans MOSFET N-CH 60V 2.9A Automotive 4-Pin(3+Tab) SOT-223 T/R

***ure Electronics: Single N-Channel 60 V 120 mOhm 9.7 nC SIPMOS® Small Signal Mosfet - SOT-223

***ark: MOSFET, N-CH, 60V, 2.9A, 150DEG C, 1.8W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***ineon: All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom

***id Electronics: Transistor MOSFET N-Ch. 60V 2,7A 1,25W 0,092Ohm SOT23 IRLML0060TRPBF

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

***ure Electronics: Single N-Channel 60 V 116 mOhm 2.5 nC 1.25 W Silicon SMT Mosfet - SOT-23

***(Formerly Allied Electronics): MOSFET, 60V, 2.7A, 92 MOHM, 2.5 NC QG, SOT-23

***icontronic: Power Field-Effect Transistor, 2.7A I(D), 60V, 0.092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ineon: Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1; SOT-23 Footprint | Target Applications: DC Switches; Load Switch; Load Switch High Side

***ment14 APAC: MOSFET, N CH, 60V, 2.7A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:60V; On Resistance Rds(on):78mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:1.25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.7A; Power Dissipation Pd:1.25W; Voltage Vgs Max:16V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.7 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 116 / Gate-Source Voltage V = 16 / Fall Time ns = 4.2 / Rise Time ns = 6.3 / Turn-OFF Delay Time ns = 6.8 / Turn-ON Delay Time ns = 5.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.25

FDMQ8203 More Information

GreenBridge Quad-MOSFET Solutions: ON Semiconductor GreenBridge™ Quad-MOSFET Solutions offer higher efficiency and better thermal performance. The MOSFETs offer lower conduction losses and improve power conversion efficiency. The GreenBridge are housed in a smaller form factor for high-power PoE applications.Learn More

Fairchild PowerTrench MOSFETs

PowerTrench® MOSFETs: ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

Market price

Part #	Mfg.	Description	Stock	Price
FDMQ8203 DISTI # 33644431	ON Semiconductor	Trans MOSFET N/P-CH Si 100V/80V 3.4A/2.6A 12-Pin MLP EP T/R	3000	3000:$1.3342
FDMQ8203 DISTI # FDMQ8203CT-ND	ON Semiconductor	MOSFET 2N/2P-CH 100V/80V 12-MLP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1992In Stock	1000:$1.4420 500:$1.7098 100:$2.0085 10:$2.4510 1:$2.7300
FDMQ8203 DISTI # FDMQ8203DKR-ND	ON Semiconductor	MOSFET 2N/2P-CH 100V/80V 12-MLP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1992In Stock	1000:$1.4420 500:$1.7098 100:$2.0085 10:$2.4510 1:$2.7300
FDMQ8203 DISTI # FDMQ8203TR-ND	ON Semiconductor	MOSFET 2N/2P-CH 100V/80V 12-MLP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$1.3300
FDMQ8203 DISTI # V36:1790_06338003	ON Semiconductor	Trans MOSFET N/P-CH Si 100V/80V 3.4A/2.6A 12-Pin MLP EP T/R	0	3000000:$1.1650 1500000:$1.1660 300000:$1.2280 30000:$1.3160 3000:$1.3300
FDMQ8203 DISTI # FDMQ8203	ON Semiconductor	Trans MOSFET N/P-CH 100V/80V 3.4A/2.6A 12-Pin MLP EP T/R - Tape and Reel (Alt: FDMQ8203) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	6000:$1.1900 12000:$1.1900 18000:$1.1900 30000:$1.1900 3000:$1.2900
FDMQ8203 DISTI # FDMQ8203	ON Semiconductor	Trans MOSFET N/P-CH 100V/80V 3.4A/2.6A 12-Pin MLP EP T/R (Alt: FDMQ8203) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0	150000:$1.6393 75000:$1.6667 30000:$1.7241 15000:$1.7857 9000:$1.8518 6000:$1.9231 3000:$2.0000
FDMQ8203 DISTI # FDMQ8203	ON Semiconductor	Trans MOSFET N/P-CH 100V/80V 3.4A/2.6A 12-Pin MLP EP T/R - Bulk (Alt: FDMQ8203) Min Qty: 226 Container: Bulk	Americas - 0
FDMQ8203 DISTI # FDMQ8203	ON Semiconductor	Trans MOSFET N/P-CH 100V/80V 3.4A/2.6A 12-Pin MLP EP T/R (Alt: FDMQ8203) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€1.0900 18000:€1.1900 12000:€1.2900 6000:€1.3900 3000:€1.6900
FDMQ8203 DISTI # 94T9974	ON Semiconductor	FET 100V 110.0 MOHM MLP / REEL	0	30000:$1.2300 18000:$1.2500 12000:$1.3000 6000:$1.4000 3000:$1.5000 1:$1.5700
FDMQ8203 DISTI # 88T3301	ON Semiconductor	MOSFET, NNPP CHANNEL, MLP 4.5X5,Transistor Polarity:N and P Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	2723	1000:$1.4100 500:$1.6900 250:$1.8800 100:$1.9800 50:$2.0800 25:$2.1700 10:$2.2700 1:$2.6800
FDMQ8203 DISTI # 512-FDMQ8203	ON Semiconductor	MOSFET Dual PT5 N-Ch & Dual PT1 PCH PowerTrench RoHS: Compliant	3015	1:$2.6500 10:$2.2500 100:$1.9600 250:$1.8600 500:$1.6700 1000:$1.4000 3000:$1.3300
FDMQ8203	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 3.4A I(D), 100V, 0.11ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	3000
FDMQ8203 DISTI # 2083359	ON Semiconductor	MOSFET, NNPP CH, MLP 4.5X5	2791	500:£1.1900 250:£1.3300 100:£1.4100 10:£1.6100 1:£2.1500
FDMQ8203 DISTI # 2083359	ON Semiconductor	MOSFET, NNPP CH, MLP 4.5X5 RoHS: Compliant	2791	3000:$2.0400 1000:$2.1600 500:$2.5800 250:$2.8600 100:$3.0100 10:$3.4600 1:$4.0700

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	Mfr.#: TPS2373-3RGWT OMO.#: OMO-TPS2373-3RGWT	Power Switch ICs - POE / LAN IEEE 802.3bt PoE high-power PD interface with advanced startup 20-VQFN -40 to 125
	Mfr.#: TPS2373-3RGWT OMO.#: OMO-TPS2373-3RGWT-TEXAS-INSTRUMENTS	Power Over Ethernet PD Controller 0V 57V 90W 20-Pin VQFN EP
	Mfr.#: 10CL010YM164C6G OMO.#: OMO-10CL010YM164C6G-INTEL	IC FPGA 101 I/O 164 MBGA Cyclone 10 LP
	Mfr.#: MAL219691152E3 OMO.#: OMO-MAL219691152E3-VISHAY	Supercapacitors / Ultracapacitors 4F 2.8V 7x14x2.5 2pin Sur Mount Flat
	Mfr.#: TLV9064IPWT OMO.#: OMO-TLV9064IPWT-TEXAS-INSTRUMENTS	4 CHANNEL, 10-MHZ, LOW-NOISE, RR
	Mfr.#: MIMXRT1064DVL6A OMO.#: OMO-MIMXRT1064DVL6A-NXP-SEMICONDUCTORS	I.MXRT1064 MPU 196MAPBGA
	Mfr.#: CM41532768DZCT OMO.#: OMO-CM41532768DZCT-CITIZEN-FINEDEVICE	CRYSTAL 32.7680KHZ 9PF SMD

FDMQ8203

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes