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FQA34N20

FQA34N20
Mfr. #:
FQA34N20
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 200V N-Channel QFET
Lifecycle:
New from this manufacturer.
Datasheet:
FQA34N20 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-3PN-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current:
34 A
Rds On - Drain-Source Resistance:
75 mOhms
Vgs - Gate-Source Voltage:
30 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
210 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
20.1 mm
Length:
16.2 mm
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
5 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
26 S
Fall Time:
115 ns
Product Type:
MOSFET
Rise Time:
280 ns
Factory Pack Quantity:
450
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
125 ns
Typical Turn-On Delay Time:
40 ns
Unit Weight:
0.000198 oz
Tags
FQA34, FQA3, FQA
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 200V 34A TO-3P
***pNet
34A 200V 0.075ohm N-CH Si P MOS
***ser
MOSFETs 200V N-Channel QFET
***inecomponents.com
200V N-Channel QFET
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:34A; On Resistance, Rds(on):0.075ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-TO-3P ;RoHS Compliant: Yes
***nell
MOSFET, N, TO-3P; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:34A; Resistance, Rds On:0.075ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-3P; Termination Type:Through Hole; Current, Idm Pulse:136A; No. of Pins:3; Power Dissipation:210W; Power, Pd:210W; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Voltage, Vds Max:200V
Part # Mfg. Description Stock Price
FQA34N20
DISTI # FQA34N20-ND		ON SemiconductorMOSFET N-CH 200V 34A TO-3P
RoHS: Compliant
Min Qty: 450
Container: Tube		Limited Supply - Call
    FQA34N20L
    DISTI # FQA34N20L-ND    		ON SemiconductorMOSFET N-CH 200V 34A TO-3P
    RoHS: Compliant
    Min Qty: 450
    Container: Tube    		Limited Supply - Call
      FQA34N20
      DISTI # 512-FQA34N20      		ON SemiconductorMOSFET 200V N-Channel QFET
      RoHS: Compliant      		0
        FQA34N20L
        DISTI # 512-FQA34N20L        		ON SemiconductorMOSFET 200V N-Ch QFET Logic Level
        RoHS: Compliant        		0
          FQA34N20LFairchild Semiconductor CorporationPower Field-Effect Transistor, 34A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          RoHS: Compliant          		669
          • 1000:$1.2600
          • 500:$1.3300
          • 100:$1.3800
          • 25:$1.4400
          • 1:$1.5600
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          Availability
          Stock:
          Available
          On Order:
          5500
          Enter Quantity:
          Current price of FQA34N20 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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