MRF6V12500HR5

Mfr. #:: MRF6V12500HR5
Manufacturer:: NXP / Freescale
Description:: RF MOSFET Transistors VHV6 500W 50V NI780H
Lifecycle:: New from this manufacturer.
Datasheet:: MRF6V12500HR5 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: MRF6V12500HR5 more Information

Product Attribute
Attribute Value

Manufacturer:: NXP

Product Category:: RF MOSFET Transistors

RoHS:: Y

Transistor Polarity:: N-Channel

Technology:: Si

Vds - Drain-Source Breakdown Voltage:: 110 V

Gain:: 18.5 dB

Output Power:: 50 W

Maximum Operating Temperature:: + 150 C

Mounting Style:: SMD/SMT

Package / Case:: NI-780

Packaging:: Reel

Configuration:: Single

Operating Frequency:: 0.96 GHz to 1.215 GHz

Series:: MRF6V12500H

Brand:: NXP / Freescale

Product Type:: RF MOSFET Transistors

Factory Pack Quantity:: 50

Subcategory:: MOSFETs

Vgs - Gate-Source Voltage:: 10 V

Vgs th - Gate-Source Threshold Voltage:: 2.4 V

Part # Aliases:: 935310167178

Unit Weight:: 0.226635 oz

Tags: MRF6V12500HR, MRF6V12500H, MRF6V125, MRF6V12, MRF6V1, MRF6V, MRF6, MRF

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MRF6V12500HR5 Ratings and Reviews

R***U

all is ok

2019-01-24

K***n

good

2019-04-28

A***V

Works

2019-04-19

G***s

Thank you.

2019-07-10

MRF6V12500HR5 Description

***W: RF Power Transistor,960 to 1215 MHz, 500 W, Typ Gain in dB is 19.7 @ 1030 MHz, 50 V, LDMOS, SOT1792

*** Semiconductors SCT: Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V, CFM2F, RoHS

***p One Stop Global: Trans RF MOSFET N-CH 110V 3-Pin NI-780 T/R

***el Electronic: RF MOSFET Transistors VHV6 500W 50V NI780H

***ponent Stockers USA: L BAND Si N-CHANNEL RF POWER MOSFET

***escale Semiconductor: Lateral N-Channel Broadband RF Power MOSFET, 860 MHz, 450 W, 50 V

***W: RF Power Transistor,470 to 860 MHz, 450 W, Typ Gain in dB is 22.5 @ 860 MHz, 50 V, LDMOS, SOT1787

***nsix Microsemi: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***ark: RF MOSFET, N CHANNEL, 110V, 375D-05; Transistor Type:RF FET; Drain Source Voltage, Vds:110V; RF Transistor Case:375D; Gain:20.5dB; Gate-Source Voltage:10V; Operating Frequency Max:860MHz; Output Power, Pout:90W

***nell: RF FET, 110V, 860MHZ-470MHZ, CASE 375D; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 860MHz; Operating Frequency Max: 470MHz; RF Transistor Case: NI-1230; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: MRF6VP3450H Series; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

***ark: Lateral N-Channel Broadband Rf Power Mosfet, 1.8-150 Mhz, 1000 W, 50 V Rohs Compliant: Yes

***W: RF Power Transistor,1.8 to 150 MHz, 1000 W, Typ Gain in dB is 26 @ 130 MHz, 50 V, LDMOS, SOT1787

***nell: RF FET, N-CH, 110V, 1.8-150MHZ, NI-1230; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 150MHz; RF Transistor Case: NI-1230; No. of Pins: 4Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

***W: RF Power Transistor,10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1732

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F

***nell: TRANSISTOR, RF, 110V, TO-270-2; Drain Source Voltage Vds: 110VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

***(Formerly Allied Electronics): IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223

***eco: Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3

*** Source Electronics: Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223

***nsix Microsemi: Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***hard Electronics: Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***SIT Distribution GmbH: Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No

***ment14 APAC: MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***nsix Microsemi: Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: No

MRF6V12500HR5 More Information

MRF6V12500 Pulse Lateral N-Ch RF Power MOSFET: NXP's MRF6V12500 Pulse Lateral N-Channel RF Power MOSFET is designed for applications operating at frequencies between 960 and 1215 MHz. Features include devices that are internally matched for ease of use, qualified up to a maximum of 50 VDD operation, integrated ESD protection, and they have greater negative gate-source voltage range for improved Class C operation. This device is suitable for use in pulse applications.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
MRF6V12500HR5 DISTI # 26099271	NXP Semiconductors	Trans RF MOSFET N-CH 110V 3-Pin NI-780 T/R	919	1:$541.9000
MRF6V12500HR5 DISTI # 568-15012-2-ND	NXP Semiconductors	FET RF 110V 1.03GHZ NI-780H RoHS: Compliant Min Qty: 50 Container: Tape & Reel (TR)	50In Stock	50:$367.0056
MRF6V12500HR5 DISTI # 568-15012-1-ND	NXP Semiconductors	FET RF 110V 1.03GHZ NI-780H RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	50In Stock	1:$378.0200
MRF6V12500HR5 DISTI # 568-15012-6-ND	NXP Semiconductors	FET RF 110V 1.03GHZ NI-780H RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	50In Stock	1:$378.0200
MRF6V12500HR5 DISTI # MRF6V12500HR5	Avnet, Inc.	Trans MOSFET N-CH 110V 2-Pin NI-780H T/R - Tape and Reel (Alt: MRF6V12500HR5) RoHS: Compliant Min Qty: 50 Container: Reel	Americas - 0	50:$402.1900 100:$386.3900 200:$371.2900 300:$357.8900 500:$350.9900
MRF6V12500HR5 DISTI # 841-MRF6V12500HR5	NXP Semiconductors	RF MOSFET Transistors VHV6 500W 50V NI780H RoHS: Compliant	0	1:$378.0100 5:$372.2000 10:$366.6600 25:$358.7500 50:$353.2400
MRF6V12500HR5 DISTI # MRF6V12500HR5	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	922	1:$370.3400 10:$360.8500 25:$351.8300
MRF6V12500HR5 DISTI # C1S233100302211	NXP Semiconductors	Trans RF MOSFET N-CH 110V 3-Pin NI-780 T/R RoHS: Compliant	919	10:$518.0000 5:$530.0000 1:$615.0000

Related products

Image	Part #	Description
	Mfr.#: MRF6V14300HSR5 OMO.#: OMO-MRF6V14300HSR5	RF MOSFET Transistors VHV6 1400MHZ 50V
	Mfr.#: MRF6V13250HSR5 OMO.#: OMO-MRF6V13250HSR5	RF MOSFET Transistors VHV6 250W 50V NI780HS
	Mfr.#: MRF6V12250HSR5 OMO.#: OMO-MRF6V12250HSR5	RF MOSFET Transistors VHV6 250W 50V NI780HS
	Mfr.#: MRF6V12500GSR5 OMO.#: OMO-MRF6V12500GSR5	RF MOSFET Transistors Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
	Mfr.#: MRF6V14300HR3 OMO.#: OMO-MRF6V14300HR3	RF MOSFET Transistors VHV6 1400MHZ 50V
	Mfr.#: MRF6V12250HSR3 OMO.#: OMO-MRF6V12250HSR3-NXP-SEMICONDUCTORS	FET RF 100V 1.03GHZ NI-780S
	Mfr.#: MRF6V13250H OMO.#: OMO-MRF6V13250H-1190	New and Original
	Mfr.#: MRF6V14300MSR5 OMO.#: OMO-MRF6V14300MSR5-1190	New and Original
	Mfr.#: MRF6V12250HR5 OMO.#: OMO-MRF6V12250HR5-NXP-SEMICONDUCTORS	FET RF 100V 1.03GHZ NI-780
	Mfr.#: MRF6V13250HSR5 OMO.#: OMO-MRF6V13250HSR5-NXP-SEMICONDUCTORS	FET RF 120V 1.3GHZ NI780S

Availability

Stock:: Available
On Order:: 3500
Enter Quantity:

Current price of MRF6V12500HR5 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$378.01~~; ~~$378.01~~

5: ~~$372.20~~; ~~$1 861.00~~

10: ~~$366.66~~; ~~$3 666.60~~

25: ~~$358.75~~; ~~$8 968.75~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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