BSC009NE2LS5IATMA1

Mfr. #:: BSC009NE2LS5IATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET LV POWER MOS
Lifecycle:: New from this manufacturer.
Datasheet:: BSC009NE2LS5IATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: BSC009NE2LS5IATMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TDSON-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 25 V

Id - Continuous Drain Current:: 100 A

Rds On - Drain-Source Resistance:: 950 uOhms

Vgs th - Gate-Source Threshold Voltage:: 1.2 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 36 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 74 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 1.27 mm

Length:: 5.9 mm

Series:: OptiMOS 5

Transistor Type:: 1 N-Channel

Width:: 5.15 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 75 S

Fall Time:: 4 ns

Product Type:: MOSFET

Rise Time:: 5 ns

Factory Pack Quantity:: 5000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 27 ns

Typical Turn-On Delay Time:: 5 ns

Part # Aliases:: BSC009NE2LS5I SP001212434

Unit Weight:: 0.003527 oz

Tags: BSC009NE2LS5, BSC009, BSC00, BSC0, BSC

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

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BSC009NE2LS5IATMA1 Description

***ure Electronics: Single N-Channel 25 V 0.9 mOhm 36 nC OptiMOS Power Mosfet - TDSON-8

***ical: Trans MOSFET N-CH 25V 40A 8-Pin TDSON EP T/R

***Components: On a Reel of 5000, Infineon BSC009NE2LS5IATMA1 MOSFET

***i-Key: MOSFET N-CH 25V 40A 8TDSON IND

***ineon: With the new OptiMOS 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. | Summary of Features: Best-in-class on-state resistance; Benchmark switching performance (lowest figure of merits R on x Q g and R on x Q gd); RoHS compliant and halogen free; Optimized EMI behavior (integrated damping network) | Benefits: Highest efficiency; Highest power density with S3O8 or Power Block package; Reduction of overall system costs; Operation at high-switching frequency | Target Applications: Desktop and server; Single-phase and multiphase POL; CPU/GPU VR in notebooks; High power density voltage regulator; Or-ing; E-fuse

BSC009NE2LS5IATMA1 More Information

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
BSC009NE2LS5IATMA1 DISTI # V72:2272_06383632	Infineon Technologies AG	Trans MOSFET N-CH 25V 40A 8-Pin TDSON EP T/R RoHS: Compliant	0
BSC009NE2LS5IATMA1 DISTI # V36:1790_06383632	Infineon Technologies AG	Trans MOSFET N-CH 25V 40A 8-Pin TDSON EP T/R RoHS: Compliant	0
BSC009NE2LS5IATMA1 DISTI # BSC009NE2LS5IATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 25V 40A 8TDSON IND RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	10000:$0.9240 5000:$0.9438
BSC009NE2LS5IATMA1 DISTI # BSC009NE2LS5IATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 25V 40A 8TDSON IND RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$1.0843 500:$1.3086 100:$1.5928 10:$1.9820 1:$2.2100
BSC009NE2LS5IATMA1 DISTI # BSC009NE2LS5IATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 25V 40A 8TDSON IND RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$1.0843 500:$1.3086 100:$1.5928 10:$1.9820 1:$2.2100
BSC009NE2LS5IATMA1 DISTI # BSC009NE2LS5IATMA1	Infineon Technologies AG	Trans MOSFET N-CH 25V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC009NE2LS5IATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.8379 30000:$0.8529 20000:$0.8829 10000:$0.9159 5000:$0.9509
BSC009NE2LS5IATMA1 DISTI # SP001212434	Infineon Technologies AG	Trans MOSFET N-CH 25V 100A 8-Pin TDSON T/R (Alt: SP001212434) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	50000:€0.7179 30000:€0.7689 20000:€0.8279 10000:€0.8969 5000:€1.0769
BSC009NE2LS5IATMA1 DISTI # 13AC8323	Infineon Technologies AG	MOSFET, N-CH, 25V, 100A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):800µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power DissipationRoHS Compliant: Yes	5477	1000:$0.9670 500:$1.1600 250:$1.2500 100:$1.3300 50:$1.4400 25:$1.5600 10:$1.6700 1:$1.9600
BSC009NE2LS5IATMA1 DISTI # 726-BSC009NE2LS5IATM	Infineon Technologies AG	MOSFET LV POWER MOS RoHS: Compliant	0	1:$1.9400 10:$1.6500 100:$1.3200 500:$1.1500 1000:$0.9570 2500:$0.8920 5000:$0.8590
BSC009NE2LS5IATMA1 DISTI # 1336577	Infineon Technologies AG	MOSFET OPTIMOS5 25V 100A 0.95M SUPERSO8, RL	7970	15000:£0.6920 5000:£0.7100
BSC009NE2LS5IATMA1 DISTI # 1339881	Infineon Technologies AG	MOSFET OPTIMOS5 25V 100A 0.95M SUPERSO8, PK	1320	2500:£0.8360 1250:£0.9720 250:£1.1080 50:£1.2500 5:£1.5240
BSC009NE2LS5IATMA1 DISTI # 2725800	Infineon Technologies AG	MOSFET, N-CH, 25V, 100A, TDSON RoHS: Compliant	5477	1000:$1.6600 500:$1.9900 100:$2.5500 10:$3.1800 1:$3.5200
BSC009NE2LS5IATMA1 DISTI # 2725800	Infineon Technologies AG	MOSFET, N-CH, 25V, 100A, TDSON	8476	500:£0.9090 250:£0.9750 100:£1.0400 25:£1.3200 5:£1.4300

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Availability

Stock:: Available
On Order:: 1990
Enter Quantity:

Current price of BSC009NE2LS5IATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.94~~; ~~$1.94~~

10: ~~$1.65~~; ~~$16.50~~

100: ~~$1.32~~; ~~$132.00~~

500: ~~$1.15~~; ~~$575.00~~

1000: ~~$0.96~~; ~~$957.00~~

2500: ~~$0.89~~; ~~$2 230.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes