PartNumber | BSC009NE2LS5IATMA1 | BSC009NE2LS5ATMA1 |
Description | MOSFET LV POWER MOS | MOSFET LV POWER MOS |
Manufacturer | Infineon | Infineon |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | TDSON-8 | TDSON-8 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 25 V | 25 V |
Id Continuous Drain Current | 100 A | 100 A |
Rds On Drain Source Resistance | 950 uOhms | 1.25 mOhms |
Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V |
Vgs Gate Source Voltage | 10 V | 16 V |
Qg Gate Charge | 36 nC | 20 nC |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 74 W | 74 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Tradename | OptiMOS | OptiMOS |
Packaging | Reel | Reel |
Height | 1.27 mm | 1.27 mm |
Length | 5.9 mm | 5.9 mm |
Series | OptiMOS 5 | OptiMOS 5 |
Transistor Type | 1 N-Channel | - |
Width | 5.15 mm | 5.15 mm |
Brand | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 75 S | 75 S |
Fall Time | 4 ns | 4 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 5 ns | 6 ns |
Factory Pack Quantity | 5000 | 5000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 27 ns | 30 ns |
Typical Turn On Delay Time | 5 ns | 4 ns |
Part # Aliases | BSC009NE2LS5I SP001212434 | BSC009NE2LS5 SP001212764 |
Unit Weight | 0.003527 oz | - |