DXT651Q-13

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

Bipolar Transistors - BJT

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-89-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

60 V

Collector- Base Voltage VCBO:

80 V

Emitter- Base Voltage VEBO:

5 V

Collector-Emitter Saturation Voltage:

0.23 V

Maximum DC Collector Current:

3 A

Gain Bandwidth Product fT:

200 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

DC Current Gain hFE Max:

300

Packaging:

Reel

Brand:

Diodes Incorporated

Continuous Collector Current:

3 A

DC Collector/Base Gain hfe Min:

100

Pd - Power Dissipation:

2 W

Product Type:

BJTs - Bipolar Transistors

Qualification:

AEC-Q101

Factory Pack Quantity:

2500

Subcategory:

Transistors

Tags

DXT65, DXT6, DXT