DXT65

DXT651-13 vs DXT651 vs DXT651-

 
PartNumberDXT651-13DXT651DXT651-
DescriptionBipolar Transistors - BJT BIPOLAR NPN
ManufacturerDiodes IncorporatedDDiodes Incorporated
Product CategoryBipolar Transistors - BJTTransistors (BJT) - SingleTransistors (BJT) - Single
RoHSY--
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-89-3--
Transistor PolarityNPN-NPN
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO80 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current3 A-3 A
Gain Bandwidth Product fT200 MHz-200 MHz
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesDXT651-DXT651
Height1.5 mm--
Length4.5 mm--
PackagingReel-Digi-ReelR Alternate Packaging
Width2.5 mm--
BrandDiodes Incorporated--
Pd Power Dissipation1000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.001834 oz-0.001834 oz
Package Case--TO-243AA
Mounting Type--Surface Mount
Supplier Device Package--SOT-89-3
Power Max--1W
Transistor Type--NPN
Current Collector Ic Max--3A
Voltage Collector Emitter Breakdown Max--60V
DC Current Gain hFE Min Ic Vce--100 @ 500mA, 2V
Vce Saturation Max Ib Ic--600mV @ 300mA, 3A
Current Collector Cutoff Max--100nA (ICBO)
Frequency Transition--200MHz
Pd Power Dissipation--1000 mW
Collector Emitter Voltage VCEO Max--60 V
Collector Base Voltage VCBO--80 V
Emitter Base Voltage VEBO--5 V
DC Collector Base Gain hfe Min--70 at 50 mA at 2 V 100 at 500 mA at 2 V 80 at 1 A at 2 V 40 at 2 A at 2 V
DC Current Gain hFE Max--70 at 50 mA at 2 V
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DXT651-13 Bipolar Transistors - BJT BIPOLAR NPN
DXT651Q-13 Bipolar Transistors - BJT Pwr Mid Perf Transistor
DXT651 New and Original
DXT651- New and Original
DXT651-13-73 New and Original
DXT651-13-90 New and Original
DXT651-13-F New and Original
DXT651-13R New and Original
DXT651Q-13 PWR MID PERF TRANSISTOR SOT89
DXT651-13 Bipolar Transistors - BJT BIPOLAR NPN
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