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FQU12N20TU

FQU12N20TU
Mfr. #:
FQU12N20TU
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 200V N-Channel QFET
Lifecycle:
New from this manufacturer.
Datasheet:
FQU12N20TU Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-251-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current:
9 A
Rds On - Drain-Source Resistance:
280 mOhms
Vgs - Gate-Source Voltage:
30 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.5 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
6.3 mm
Length:
6.8 mm
Series:
FQU12N20
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
2.5 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
7.3 S
Fall Time:
55 ns
Product Type:
MOSFET
Rise Time:
120 ns
Factory Pack Quantity:
5040
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
30 ns
Typical Turn-On Delay Time:
13 ns
Part # Aliases:
FQU12N20TU_NL
Unit Weight:
0.012102 oz
Tags
FQU12N2, FQU12, FQU1, FQU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel QFET® MOSFET 200V, 9.0A, 280mΩ
***ark
Transistor,mosfet,n-Channel,200V V(Br)Dss,9A I(D),to-251Aa Rohs Compliant: Yes |Onsemi FQU12N20TU
***r Electronics
Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..
***i-Key
MOSFET N-CH 200V 7.6A IPAK
***ser
MOSFETs 200V N-Channel QFET
***el Nordic
Contact for details
***i-Key
MOSFET N-CH 200V 7.6A IPAK
***ser
MOSFETs 200V N-Ch QFET Logic Level
***-Wing Technology
N-CHANNEL POWER MOSFET
***ure Electronics
Single N-Channel 200 V 0.235 Ohm 38 nC HEXFET® Power Mosfet - IPAK
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):235mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***emi
Power MOSFET, N-Channel, QFET®, 250 V, 7.4 A, 420 mΩ, IPAK
***r Electronics
Power Field-Effect Transistor, 7.4A I(D), 250V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 200 V, 7.8 A, 360 mΩ, IPAK
***et
Trans MOSFET N-CH 200V 7.8A 3-Pin(3+Tab) IPAK Rail
***r Electronics
Power Field-Effect Transistor, 7.8A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
N-Ch/200V/10A/Qfet Rohs Compliant: Yes |Onsemi FQU10N20CTU
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, P-Channel, QFET®, -200 V, -3.7 A, 1.4 Ω, IPAK
*** Stop Electro
Power Field-Effect Transistor, 3.7A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***rchild Semiconductor
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Part # Mfg. Description Stock Price
FQU12N20TU
DISTI # FQU12N20TU-ND		ON SemiconductorMOSFET N-CH 200V 9A IPAK
RoHS: Compliant
Min Qty: 5040
Container: Tube		Temporarily Out of Stock
  • 5040:$0.5709
FQU12N20TU
DISTI # FQU12N20TU		ON SemiconductorTrans MOSFET N-CH 200V 9A 3-Pin(3+Tab) IPAK Rail (Alt: FQU12N20TU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€0.8019
  • 10:€0.7129
  • 25:€0.6409
  • 50:€0.5829
  • 100:€0.5339
  • 500:€0.4929
  • 1000:€0.4579
FQU12N20TU
DISTI # FQU12N20TU		ON SemiconductorTrans MOSFET N-CH 200V 9A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FQU12N20TU)
RoHS: Compliant
Min Qty: 5040
Container: Tube		Americas - 0
  • 5040:$0.4429
  • 10080:$0.4399
  • 20160:$0.4349
  • 30240:$0.4289
  • 50400:$0.4179
FQU12N20TU
DISTI # 82C4388		ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,9A I(D),TO-251AA ROHS COMPLIANT: YES0
  • 10000:$0.5080
  • 2500:$0.5230
  • 1000:$0.6480
  • 500:$0.7420
  • 100:$0.8390
  • 10:$1.1000
  • 1:$1.2800
FQU12N20TU
DISTI # 512-FQU12N20TU		ON SemiconductorMOSFET 200V N-Channel QFET
RoHS: Compliant		3569
  • 1:$1.4000
  • 10:$1.1900
  • 100:$0.9130
  • 500:$0.8070
  • 1000:$0.6370
  • 2500:$0.5650
  • 10000:$0.5440
FQU12N20TUFairchild Semiconductor Corporation 
RoHS: Not Compliant		15120
  • 1000:$0.8200
  • 500:$0.8600
  • 100:$0.8900
  • 25:$0.9300
  • 1:$1.0000
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Availability
Stock:
Available
On Order:
1986
Enter Quantity:
Current price of FQU12N20TU is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.10
$1.10
10
$0.94
$9.44
100
$0.72
$72.50
500
$0.64
$320.50
1000
$0.51
$506.00
2500
$0.45
$1 120.00
10000
$0.43
$4 320.00
25000
$0.42
$10 450.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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