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| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| SI4936ADY-T1-E3 DISTI # V72:2272_09216667 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 4.4A 8-Pin SOIC N T/R RoHS: Compliant | 6 |
|
| SI4936ADY-T1-GE3 DISTI # V36:1790_09216669 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 4.4A 8-Pin SOIC N T/R | 0 |
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| SI4936ADY-T1-E3 DISTI # SI4936ADY-T1-E3CT-ND | Vishay Siliconix | MOSFET 2N-CH 30V 4.4A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 1283In Stock |
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| SI4936ADY-T1-E3 DISTI # SI4936ADY-T1-E3DKR-ND | Vishay Siliconix | MOSFET 2N-CH 30V 4.4A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 1283In Stock |
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| SI4936ADY-T1-E3 DISTI # SI4936ADY-T1-E3TR-ND | Vishay Siliconix | MOSFET 2N-CH 30V 4.4A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| SI4936ADY-T1-GE3 DISTI # SI4936ADY-T1-GE3-ND | Vishay Siliconix | MOSFET 2N-CH 30V 4.4A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| SI4936ADY-T1-E3 DISTI # SI4936ADY-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 4.4A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4936ADY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| SI4936ADY-T1-GE3 DISTI # SI4936ADY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 4.4A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4936ADY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
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| SI4936ADY-T1-E3 DISTI # 06J7983 | Vishay Intertechnologies | DUAL N CHANNEL MOSFET, 30V, SOIC, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.036ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes | 0 |
|
| SI4936ADY-T1-E3 DISTI # 85W2151 | Vishay Intertechnologies | Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.032ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power Dissipation Pd:2W,No. of Pins:8Pins RoHS Compliant: Yes | 0 |
|
| SI4936ADY-T1-E3 DISTI # 70026117 | Vishay Siliconix | MOSFET,Power,Dual N-Ch,VDSS 30V,RDS(ON) 0.032Ohm,ID 4.4A,SO-8,PD 1.1W,VGS +/-20 RoHS: Compliant | 809 |
|
| SI4936ADY DISTI # 781-SI4936ADY | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI4936ADY-T1-E3 RoHS: Not compliant | 0 | |
| SI4936ADY-T1-E3 DISTI # 781-SI4936ADY-T1-E3 | Vishay Intertechnologies | MOSFET 30V 5.9A 2W RoHS: Compliant | 8765 |
|
| SI4936ADY-T1-GE3 DISTI # 781-SI4936ADY-GE3 | Vishay Intertechnologies | MOSFET 30V 5.9A 2.0W 36mohm @ 10V RoHS: Compliant | 0 |
|
| SI4936ADY-E3 DISTI # 781-SI4936ADY-E3 | Vishay Intertechnologies | MOSFET 30V 5.9A 2W RoHS: Compliant | 0 | |
| SI4936ADY-T1 DISTI # 781-SI4936ADY-TR | Vishay Intertechnologies | MOSFET 30V 5.9A 2W RoHS: Not compliant | 0 | |
| SI4936ADY-T1-E3 | Vishay Intertechnologies | 3935 | ||
| SI4936ADYT1E3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 4.4A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant | 2395 | |
| SI4936ADY DISTI # 8156476 | Vishay Intertechnologies | RoHS: Compliant | 0 |
|
| SI4936ADY-T1-E3 | Vishay Intertechnologies | MOSFET 30V 5.9A 2W | Americas - |
| Image | Part # | Description |
|---|---|---|
|
Mfr.#: SI4965DY-T1-E3 OMO.#: OMO-SI4965DY-T1-E3 |
MOSFET RECOMMENDED ALT 781-SI9933CDY-T1-GE3 |
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Mfr.#: SI4923DY-T1-E3 OMO.#: OMO-SI4923DY-T1-E3 |
MOSFET RECOMMENDED ALT 781-SI4925DDY-GE3 |
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Mfr.#: SI4946BEY-T1-E3-CUT TAPE |
New and Original |
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Mfr.#: SI4904DY OMO.#: OMO-SI4904DY-1190 |
New and Original |
|
Mfr.#: SI4908DY-T1-E3 OMO.#: OMO-SI4908DY-T1-E3-VISHAY |
MOSFET 2N-CH 40V 5A 8-SOIC |
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Mfr.#: SI4925DY OMO.#: OMO-SI4925DY-1190 |
MOSFET 30V 6.1A 2W |
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Mfr.#: SI4946BEY-T1-E OMO.#: OMO-SI4946BEY-T1-E-1190 |
New and Original |
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Mfr.#: SI4949EY OMO.#: OMO-SI4949EY-1190 |
Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: SI4963DY OMO.#: OMO-SI4963DY-1190 |
Power Field-Effect Transistor, 6.2A I(D), 20V, 0.033ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: SI4967DY-T1 OMO.#: OMO-SI4967DY-T1-1190 |
MOSFET 12V 7.5A 2W |