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| PartNumber | SI4936BDY-T1-E3 | SI4936ADY-T1-E3 | SI4936ADY-T1-GE3 |
| Description | MOSFET 30 Volt 6.9 Amp 2.8W | MOSFET 30V 5.9A 2W | MOSFET 30V 5.9A 2.0W 36mohm @ 10V |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 | SO-8 |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 6.9 A | 5.9 A | - |
| Rds On Drain Source Resistance | 35 mOhms | 36 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1 V | - |
| Vgs Gate Source Voltage | 10 V | 10 V | - |
| Qg Gate Charge | 9.1 nC | 13 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.8 W | 2 W | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SI4 | SI4 | SI4 |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 12 S | 15 S | - |
| Fall Time | 10 ns | 5 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 25 ns | 14 ns | - |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 12 ns | 30 ns | - |
| Typical Turn On Delay Time | 5 ns | 6 ns | - |
| Part # Aliases | SI4936BDY-E3 | SI4936ADY-E3 | SI4936ADY-GE3 |
| Unit Weight | 0.017870 oz | 0.017870 oz | 0.017870 oz |
| Height | - | 1.75 mm | - |
| Length | - | 4.9 mm | - |
| Width | - | 3.9 mm | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4936BDY-T1-E3 | MOSFET 30 Volt 6.9 Amp 2.8W | |
| SI4936ADY-T1-E3 | MOSFET 30V 5.9A 2W | ||
| SI4936BDY-T1-GE3 | MOSFET 30V 6.9A 2.8W 35mohm @ 10V | ||
| SI4936ADY-T1-GE3 | MOSFET 30V 5.9A 2.0W 36mohm @ 10V | ||
| SI4936CDY-T1-E3 | MOSFET 30V Vds 20V Vgs SO-8 | ||
Vishay |
SI4936ADY-T1-GE3 | RF Bipolar Transistors MOSFET 30V 5.9A 2.0W 36mohm @ 10V | |
| SI4936ADY-T1-E3 | MOSFET 2N-CH 30V 4.4A 8-SOIC | ||
| SI4936BDY-T1-E3 | MOSFET 2N-CH 30V 6.9A 8-SOIC | ||
| SI4936BDY-T1-GE3 | MOSFET 2N-CH 30V 6.9A 8-SOIC | ||
| SI4936CDY-T1-E3 | MOSFET 2N-CH 30V 5.8A 8SO | ||
| SI4936CDY-T1-GE3 | MOSFET 2N-CH 30V 5.8A 8-SOIC | ||
| SI4936BDY-T1-E3-CUT TAPE | New and Original | ||
| SI4936 | New and Original | ||
| SI4936A | Small Signal Field-Effect Transistor, 4.4A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | ||
| SI4936ADY | MOSFET RECOMMENDED ALT 781-SI4936ADY-T1-E3 | ||
| SI4936ADY-E1 | New and Original | ||
| SI4936ADY-T1 | MOSFET 30V 5.9A 2W | ||
| SI4936ADY-T1-E | New and Original | ||
| SI4936ADY-T1-E3 GE3 | New and Original | ||
| SI4936ADY-T1-E3. | New and Original | ||
| SI4936ADY-TI-E3 | New and Original | ||
| SI4936BDY | New and Original | ||
| SI4936BDY-T1-E3 GE3 | New and Original | ||
| SI4936BDY-TI-E3 | New and Original | ||
| SI4936C | New and Original | ||
| SI4936CDY | New and Original | ||
| SI4936CDY-T1 | New and Original | ||
| SI4936CDY-T1-E3 GE3 | New and Original | ||
| SI4936CDY-T1-G3 | New and Original | ||
| SI4936DT-T1 | New and Original | ||
| SI4936DY | MOSFET 30V 5.8A 2W | ||
| SI4936DY-E3 | MOSFET 30V 5.8A 2W | ||
| SI4936DY-T | New and Original | ||
| SI4936DY-T1 | MOSFET Transistor, N-Channel, SO | ||
| SI4936DY-T1 SOP-8 | New and Original | ||
| SI4936DY-T1 SOP8 | New and Original | ||
| SI4936DY-T1-E3 | MOSFET 30 Volt 5.8 Amp 2.0W | ||
| SI4936DY-T1-GE3 | New and Original | ||
| SI4936DY-TE-GE3 | New and Original | ||
| SI4936DY-TI | New and Original | ||
| SI4936DY-TI-E3 | New and Original | ||
| SI4936DY/ADY-T1-E3 | New and Original |