NGTG15N60S1EG

Mfr. #:: NGTG15N60S1EG
Manufacturer:: ON Semiconductor
Description:: IGBT Transistors 15A 600V IGBT
Lifecycle:: New from this manufacturer.
Datasheet:: NGTG15N60S1EG Datasheet
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More Information:: NGTG15N60S1EG more Information

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-220-3

Mounting Style:: Through Hole

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 1.95 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 30 A

Pd - Power Dissipation:: 47 W

Series:: NGTG15N60S1

Packaging:: Tube

Brand:: ON Semiconductor

Gate-Emitter Leakage Current:: 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 50

Subcategory:: IGBTs

Unit Weight:: 0.081130 oz

Tags: NGTG15N6, NGTG15, NGTG1, NGTG, NGT

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NGTG15N60S1EG Ratings and Reviews

W***d

2019-01-05

D***o

Okk

2019-04-11

NGTG15N60S1EG Description

***ark: Igbt Single Transistor, 30 A, 1.75 V, 117 W, 600 V, To-220, 3 Rohs Compliant: Yes

***ical: Trans IGBT Chip N-CH 650V 30A 117000mW 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: NGTG15N60S 600 V 15 A Flange Mount Short Circuit Rated IGBT - TO-220

***r Electronics: Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, TO-220AB

*** Electronics: ON SEMICONDUCTOR - NGTG15N60S1EG - Transistor IGBT Singolo, 30 A, 1.75 V, 117 W, 600 V, TO-220, 3 Pin

***(Formerly Allied Electronics): IGBT 600V 30A Short-Circuit 1.5V TO220

***nell: IGBT, 600V, 15A, TO-220-3; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 117W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT

***ure Electronics: NGTB15N60EG 600 V 30 A 78/130 ns Short Circuit Rated IGBT Flange Mount-TO-220

***ical: Trans IGBT Chip N-CH 600V 30A 130000mW 3-Pin(3+Tab) TO-220AB Tube

***(Formerly Allied Electronics): IGBT N 600V 30A Short-Circuit 1.7V TO220

***nell: IGBT, 600V, 15A, TO-220-3; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 117W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT

***ure Electronics: IKP15N60T Series 600 V 26 A Through Hole IGBT TrenchStop Series - PG-TO-220-3

***ow.cn: Trans IGBT Chip N-CH 600V 26A 130000mW Automotive 3-Pin(3+Tab) TO-220AB Tube

*** Stop Electro: Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ment14 APAC: IGBT, N, 600V, 15A, TO-220; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:130W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:15A; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:130W; Power Dissipation Pd:130W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***ineon SCT: The 600 V, 15 A hard-switching TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

***ure Electronics: NGTB15N60S 600 V 30 A Flange Mount Short Circuit Rated IGBT - TO-220

***ical: Trans IGBT Chip N-CH 650V 30A 117000mW 3-Pin(3+Tab) TO-220AB Tube

***r Electronics: Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, TO-220AB

***(Formerly Allied Electronics): IGBT N 600V 30A Short-Circuit 1.5V TO220

***nell: IGBT, 600V, 15A, W/ DIODE, TO-220-3; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 117W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT

***p One Stop: Trans IGBT Chip N-CH 600V 30A 115000mW 3-Pin(3+Tab) TO-220 Tube

***icroelectronics: Trench gate field-stop IGBT, H series 600 V, 15 A high speed

***ure Electronics: STGP Series 600 V 30 A 24.5 ns t(on) Trench Gate Field-Stop IGBT - TO-220-3

***r Electronics: Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***p One Stop Global: Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-220F Tube

***r Electronics: Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***rchild Semiconductor: Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as : sewing machine, CNC, motor control and home appliances.

***ineon SCT: Trans IGBT Chip N-CH 600V 26A 130000mW 3-Pin(3+Tab) TO-220AB Tube, PG-TO220-3, RoHS

***ure Electronics: IGP15N60T: 600 V 15 A Through Hole IGBT TrenchStop - PG-TO-220-3

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

NGTG15N60S1EG More Information

NGTB15N60 Short-Ciruit Rated IGBTs: ON Semiconductor's NGTB15N60 Short-Circuit Rated IGBTs feature a robust and cost effective Non-Punch through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications. Incorporated into the NGTB15N60EG and NGTB15N60S1EG is a rugged co-packaged reverse recovery diode with a low forward voltage. Typical applications include appliance motor control, general purpose inverter and AC and DC motor control.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
NGTG15N60S1EG DISTI # NGTG15N60S1EGOS-ND	ON Semiconductor	IGBT 600V 30A 117W TO220-3 RoHS: Compliant Min Qty: 1 Container: Tube	2870In Stock	1000:$0.6867 500:$0.8590 100:$1.0312 50:$1.2464 1:$1.4600
NGTG15N60S1EG DISTI # NGTG15N60S1EG	ON Semiconductor	Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube (Alt: NGTG15N60S1EG) RoHS: Compliant Min Qty: 750 Container: Tube	Americas - 0	750:$0.5349 850:$0.5319 1600:$0.5249 3750:$0.5179 7500:$0.5059
NGTG15N60S1EG DISTI # 46W5235	ON Semiconductor	IGBT Single Transistor, 30 A, 1.75 V, 117 W, 600 V, TO-220, 3 RoHS Compliant: Yes	475	10:$1.3200 1:$1.5400
NGTG15N60S1EG DISTI # 70341229	ON Semiconductor	IGBT 600V 30A Short-Circuit 1.5V TO220 RoHS: Compliant	0	20:$1.3700 200:$1.3000 500:$1.2300 1000:$1.1700
NGTG15N60S1EG	ON Semiconductor	RoHS: Not Compliant	26446	1000:$0.6100 500:$0.6400 100:$0.6600 25:$0.6900 1:$0.7500
NGTG15N60S1EG DISTI # 863-NGTG15N60S1EG	ON Semiconductor	IGBT Transistors 15A 600V IGBT RoHS: Compliant	804	1:$1.3500 10:$1.1500 100:$0.8820 500:$0.7800 1000:$0.6150
NGTG15N60S1EG DISTI # 2216672	ON Semiconductor	IGBT, 600V, 15A, TO-220-3 RoHS: Compliant	475	1000:$0.9740 500:$1.2400 100:$1.4000 10:$1.8200 1:$2.1400
NGTG15N60S1EG DISTI # 2216672	ON Semiconductor	IGBT, 600V, 15A, TO-220-3 RoHS: Compliant	475	500:£0.6010 250:£0.6410 100:£0.6800 25:£0.8830 5:£0.9770

Image	Part #	Description
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	Mfr.#: FL5160MX OMO.#: OMO-FL5160MX	Switching Controllers AC Dimmer Controller
	Mfr.#: FL5150MX OMO.#: OMO-FL5150MX	Switching Controllers IGBT/MOSFET AC Phase Cut Dimmer Cntroller
	Mfr.#: 701W-X2/04 OMO.#: OMO-701W-X2-04	AC Power Entry Modules MALE SNAP-IN .25 QD
	Mfr.#: HS250 3R F OMO.#: OMO-HS250-3R-F	Wirewound Resistors - Chassis Mount 250W 3.0 OHM1%
	Mfr.#: STGF4M65DF2 OMO.#: OMO-STGF4M65DF2-STMICROELECTRONICS	TRENCH GATE FIELD-STOP IGBT, M S
	Mfr.#: MB8S OMO.#: OMO-MB8S-ON-SEMICONDUCTOR	BRIDGE RECT 1P 800V 500MA 4SOIC
	Mfr.#: FL5150MX OMO.#: OMO-FL5150MX-ON-SEMICONDUCTOR	Switching Controllers IGBT/MOSFET AC Phase Cut Dimmer Cntrolle
	Mfr.#: FL5160MX OMO.#: OMO-FL5160MX-ON-SEMICONDUCTOR	AC DIMMER CONTROLLER

NGTG15N60S1EG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

W***d

D***o

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes