NGTG15N6

NGTG15N60S1EG vs NGTG15N60S1 vs NGTG15N60S1EG(G15N60S1G)

 
PartNumberNGTG15N60S1EGNGTG15N60S1NGTG15N60S1EG(G15N60S1G)
DescriptionIGBT Transistors 15A 600V IGBT
ManufacturerON SemiconductorON Semiconductor-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-220-3--
Mounting StyleThrough HoleThrough Hole-
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.95 V1.95 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C30 A30 A-
Pd Power Dissipation47 W--
SeriesNGTG15N60S1NGTG15N60S1-
PackagingTubeTube-
BrandON Semiconductor--
Gate Emitter Leakage Current100 nA100 nA-
Product TypeIGBT Transistors--
Factory Pack Quantity50--
SubcategoryIGBTs--
Unit Weight0.081130 oz0.081130 oz-
Package Case-TO-220-3-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-220-
Power Max-117W-
Reverse Recovery Time trr---
Current Collector Ic Max-30A-
Voltage Collector Emitter Breakdown Max-600V-
IGBT Type-NPT-
Current Collector Pulsed Icm-120A-
Vce on Max Vge Ic-1.7V @ 15V, 15A-
Switching Energy-550μJ (on), 350μJ (off)-
Gate Charge-88nC-
Td on off 25°C-65ns/170ns-
Test Condition-400V, 15A, 22 Ohm, 15V-
Pd Power Dissipation-47 W-
Collector Emitter Voltage VCEO Max-600 V-
Manufacturer Part # Description RFQ
NGTG15N60S1EG IGBT Transistors 15A 600V IGBT
NGTG15N60S1 New and Original
NGTG15N60S1EG(G15N60S1G) New and Original
ON Semiconductor
ON Semiconductor
NGTG15N60S1EG IGBT Transistors 15A 600V IGBT
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