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NGTG15N60S1EG

P1-P3P4-P6P7-P9
© Semiconductor Components Industries, LLC, 2015
December, 2015 − Rev. 5
1 Publication Order Number:
NGTG15N60S1E/D
NGTG15N60S1EG
IGBT - Short-Circuit Rated
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Non−Punch Through (NPT) Trench construction, and
provides superior performance in demanding switching applications.
Offering both low on state voltage and minimal switching loss, the
IGBT is well suited for motor drive control and other hard switching
applications.
Features
• Low Saturation Voltage Resulting in Low Conduction Loss
• Low Switching Loss in Higher Frequency Applications
• 5 ms Short Circuit Capability
• Excellent Current versus Package Size Performance Density
• This is a Pb−Free Device
Typical Applications
• White Goods Appliance Motor Control
• General Purpose Inverter
• AC and DC Motor Control
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−emitter voltage V
CES
650 V
Collector current
@ T
C = 25°C
@ TC = 100°C
I
C
30
15
A
Pulsed collector current, T
pulse
limited by
T
Jmax
I
CM
120 A
Gate−emitter voltage V
GE
$20 V
Power dissipation
@ TC = 25°C
@ T
C = 100°C
P
D
117
47
W
Short circuit withstand time
V
GE
= 15 V, V
CE
= 400 V, T
J
v +150°C
t
SC
5
ms
Operating junction temperature range T
J
−55 to
+150
°C
Storage temperature range T
stg
−55 to
+150
°C
Lead temperature for soldering, 1/8” from
case for 5 seconds
T
SLD
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
TO−220
CASE 221A
STYLE 9
15 A, 650 V
V
CEsat
= 1.5 V
Device Package Shipping
ORDERING INFORMATION
NGTG15N60S1EG TO−220
(Pb−Free)
50 Units / Rail
www.onsemi.com
MARKING DIAGRAM
G
E
C
G15N60S1G
AYWW
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
G
C
E
C
NGTG15N60S1EG
www.onsemi.com
2
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction to case, for IGBT
R
q
JC
1.06 °C/W
Thermal resistance junction to ambient
R
q
JA
60 °C/W
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
GE
= 0 V, I
C
= 500 mA V
(BR)CES
650 − − V
Collector−emitter saturation voltage V
GE
= 15 V , I
C
= 15 A
V
GE
= 15 V , I
C
= 15 A, T
J
= 150°C
V
CEsat
1.3
1.55
1.5
1.75
1.7
1.95
V
Gate−emitter threshold voltage
V
GE
= V
CE
, I
C
= 250 mA V
GE(th)
4.5 5.5 6.5 V
Collector−emitter cut−off current, gate−emitter
short−circuited
V
GE
= 0 V, V
CE
= 600 V
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150°C
I
CES
−
−
10
−
−
200
mA
Gate leakage current, collector−emitter
short−circuited
V
GE
= 20 V, V
CE
= 0 V
I
GES
− − 100 nA
Forward Transconductance V
CE
= 20 V, I
C
= 15 A
g
fs
− 10.1 − S
DYNAMIC CHARACTERISTIC
Input capacitance
V
CE
= 20 V, V
GE
= 0 V, f = 1 MHz
C
ies
− 1950 −
pF
Output capacitance
C
oes
− 70 −
Reverse transfer capacitance
C
res
− 48 −
Gate charge total
V
CE
= 480 V, I
C
= 15 A, V
GE
= 15 V
Q
g
− 88 −
nC
Gate to emitter charge
Q
ge
− 16 −
Gate to collector charge
Q
gc
− 42 −
SWITCHING CHARACTERISTIC , INDUCTIVE LOAD
Turn−on delay time
T
J
= 25°C
V
CC
= 400 V, I
C
= 15 A
R
g
= 22 W
V
GE
= 0 V / 15 V*
t
d(on)
− 65 −
ns
Rise time
t
r
− 28 −
Turn−off delay time
t
d(off)
− 170 −
Fall time
t
f
− 140 −
Turn−on switching loss
E
on
− 0.550 −
mJ
Turn−off switching loss E
off
− 0.350 −
Total switching loss E
ts
− 0.900 −
Turn−on delay time
T
J
= 150°C
V
CC
= 400 V, I
C
= 15 A
R
g
= 22 W
V
GE
= 0 V / 15 V*
t
d(on)
− 65 −
ns
Rise time
t
r
− 28 −
Turn−off delay time
t
d(off)
− 180 −
Fall time
t
f
− 260 −
Turn−on switching loss
E
on
− 0.650 −
mJ
Turn−off switching loss
E
off
− 0.600 −
Total switching loss
E
ts
− 1.250 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Includes diode reverse recovery loss using NGTB15N60S1EG.
NGTG15N60S1EG
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Output Characteristics Figure 2. Output Characteristics
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
87643210
0
10
20
30
40
50
60
Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics
V
CE
, COLLECTOR−EMITTER VOLTAGE (V) V
GE
, GATE−EMITTER VOLTAGE (V)
86543210
0
10
20
30
40
50
60
70
12 141086420
0
10
20
30
40
50
60
Figure 5. V
CE(sat)
vs. T
J
Figure 6. Typical Capacitance
T
J
, JUNCTION TEMPERATURE (°C) V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
1304010−20−50
0
0.5
1.0
1.5
2.0
2.5
3.0
908060504020100
10
100
1000
10,000
I
C
, COLLECTOR CURRENT (A)I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
CAPACITANCE (pF)
5
V
GE
= 7 V
V
GE
= 9 V
V
GE
= 11 V
V
GE
= 17 V to 13 V
T
J
= 25°C
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
87643210
0
10
20
30
40
50
60
I
C
, COLLECTOR CURRENT (A)
5
V
GE
= 7 V
V
GE
= 9 V
V
GE
= 11 V
7
V
GE
= 7 V
V
GE
= 9 V
V
GE
= 11 V
150°C
−40°C
T
J
= 25°C
70 160
I
C
= 30 A
I
C
= 15 A
I
C
= 10 A
I
C
= 5 A
30 70 100
C
ies
C
oes
C
res
V
GE
= 17 V to 13 V
T
J
= 150°C
V
GE
= 17 V to 13 V
T
J
= −40°C
100
P1-P3P4-P6P7-P9

NGTG15N60S1EG

Mfr. #:
Buy NGTG15N60S1EG
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 15A 600V IGBT
Lifecycle:
New from this manufacturer.
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