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FDB8874

FDB8874
Mfr. #:
FDB8874
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 30V N-Channel PowerTrench
Lifecycle:
New from this manufacturer.
Datasheet:
FDB8874 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDB8874 DatasheetFDB8874 Datasheet (P4-P6)FDB8874 Datasheet (P7-P9)FDB8874 Datasheet (P10-P11)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
121 A
Rds On - Drain-Source Resistance:
4.7 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
110 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
4.83 mm
Length:
10.67 mm
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
9.65 mm
Brand:
ON Semiconductor / Fairchild
Fall Time:
34 ns
Product Type:
MOSFET
Rise Time:
135 ns
Factory Pack Quantity:
800
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
45 ns
Typical Turn-On Delay Time:
10 ns
Part # Aliases:
FDB8874_NL
Unit Weight:
0.139332 oz
Tags
FDB887, FDB88, FDB8, FDB
Service Guarantees

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***inecomponents.com
30V,121A,4.7 OHM, N-CH,TO263,POWER TRENCH MOSFET
***eco
002, PLASTIC MOLDED, TO-263 PKG, CNTR LD CUT, SMD (45)
***or
MOSFET N-CH 30V 21A/121A TO263AB
***ser
MOSFETs 30V N-Channel PowerTrench
***nell
MOSFET, N, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 110W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Termination Type: Surface Mount Device; Transistor Type: Trench; Voltage Vds Typ: 30V; Voltage Vgs Rds on Measurement: 10V
Part # Mfg. Description Stock Price
FDB8874
DISTI # FDB8874-ND		ON SemiconductorMOSFET N-CH 30V 121A TO-263AB
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Limited Supply - Call
    FDB8874
    DISTI # 512-FDB8874    		ON SemiconductorMOSFET 30V N-Channel PowerTrench
    RoHS: Compliant    		0
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      		 Connecto
      Availability
      Stock:
      Available
      On Order:
      2000
      Enter Quantity:
      Current price of FDB8874 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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