SI7772DP-T1-GE3

Mfr. #:: SI7772DP-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Lifecycle:: New from this manufacturer.
Datasheet:: SI7772DP-T1-GE3 Datasheet
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ECAD Model:
More Information:: SI7772DP-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: E

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PowerPAK-SO-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 35.6 A

Rds On - Drain-Source Resistance:: 13 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 28 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 29.8 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: TrenchFET

Packaging:: Reel

Height:: 1.04 mm

Length:: 6.15 mm

Series:: SI7

Transistor Type:: 1 N-Channel

Width:: 5.15 mm

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 37 S

Fall Time:: 10 ns

Product Type:: MOSFET

Rise Time:: 18 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 15 ns

Typical Turn-On Delay Time:: 16 ns

Part # Aliases:: SI7772DP-GE3

Unit Weight:: 0.017870 oz

Tags: SI77, SI7

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We provide 90-360 days warranty.

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SI7772DP-T1-GE3 Description

***ure Electronics: Single N-Channel 30 V 13 mOhm SMT TrenchFET Gen III Power Mosfet - PowerPAK SO-8

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35.6A; On Resistance Rds(On):0.0105Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V Rohs Compliant: Yes

***ment14 APAC: MOSFET,N CH,SC DIO,30V,35.6A,SO8PPAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):10500µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.9W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12.9A; Power Dissipation Pd:3.9W; Voltage Vgs Max:20V

SI7772DP-T1-GE3 More Information

SkyFET® Power MOSFETs: Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

Part #	Mfg.	Description	Stock	Price
SI7772DP-T1-GE3 DISTI # V72:2272_09215678	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12.9A 8-Pin PowerPAK SO T/R RoHS: Compliant	5930	3000:$0.2938 1000:$0.3135 500:$0.3648 250:$0.4058 100:$0.4252 25:$0.5137 10:$0.5241 1:$0.6158
SI7772DP-T1-GE3 DISTI # SI7772DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 35.6A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8242In Stock	1000:$0.3716 500:$0.4645 100:$0.6271 10:$0.8130 1:$0.9300
SI7772DP-T1-GE3 DISTI # SI7772DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 35.6A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8242In Stock	1000:$0.3716 500:$0.4645 100:$0.6271 10:$0.8130 1:$0.9300
SI7772DP-T1-GE3 DISTI # SI7772DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 35.6A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	3000:$0.3270
SI7772DP-T1-GE3 DISTI # 26730596	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12.9A 8-Pin PowerPAK SO T/R RoHS: Compliant	5930	3000:$0.2975 1000:$0.3008 500:$0.3273 250:$0.3609 100:$0.3648 25:$0.3925
SI7772DP-T1-GE3 DISTI # SI7772DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12.9A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7772DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 21000	3000:$0.3199 6000:$0.3189 12000:$0.3179 18000:$0.3169 30000:$0.3169
SI7772DP-T1-GE3 DISTI # SI7772DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12.9A 8-Pin PowerPAK SO T/R (Alt: SI7772DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI7772DP-T1-GE3 DISTI # 35R6247	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 35.6A,Transistor Polarity:N Channel,Continuous Drain Current Id:35.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0105ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Product Range:- RoHS Compliant: Yes	0	1:$0.8200 25:$0.6540 50:$0.5760 100:$0.4970 250:$0.4540 500:$0.4100 1000:$0.3430
SI7772DP-T1-GE3. DISTI # 15AC0304	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:35.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0105ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power Dissipation Pd:3.9W,No. of Pins:8Pins RoHS Compliant: Yes	21000	1:$0.3420 3000:$0.3420
SI7772DP-T1-GE3 DISTI # 781-SI7772DP-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	1843	1:$0.8200 10:$0.6540 100:$0.4970 500:$0.4100 1000:$0.3430 3000:$0.3420
SI7772DP-T1-GE3	Vishay Siliconix		2988
SI7772DP-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	Americas - Stock
SI7772DP-T1-GE3 DISTI # C1S803604553529	Vishay Intertechnologies	MOSFETs RoHS: Compliant	5930	250:$0.3609 100:$0.3648 25:$0.3925 10:$0.4361

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Availability

Stock:: Available
On Order:: 1987
Enter Quantity:

Current price of SI7772DP-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.81~~; ~~$0.81~~

10: ~~$0.65~~; ~~$6.53~~

100: ~~$0.50~~; ~~$49.60~~

500: ~~$0.41~~; ~~$205.00~~

1000: ~~$0.33~~; ~~$328.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes