IRL520NLPBF

Mfr. #:: IRL520NLPBF
Manufacturer:: IR
Description:: MOSFET, 100V, 10A, 180 MOHM, 13.3 NC QG, LOGIC LEVEL, TO-262
Lifecycle:: New from this manufacturer.
Datasheet:: IRL520NLPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer: IR

Product Category: IC Chips

Tags: IRL520N, IRL52, IRL5, IRL

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Vacuum Packaging with PL

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IRL520NLPBF Description

***ernational Rectifier: 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package

***(Formerly Allied Electronics): MOSFET; 100V; 10A; 180 MOHM; 13.3 NC QG; LOGIC LEVEL; TO-262

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:10A; On Resistance, Rds(on):180mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes

***i-Key: MOSFET N-CH 55V 45A TO-262

***i-Key Marketplace: OPTLMOS N-CHANNEL POWER MOSFET

***ical: Trans MOSFET N-CH 600V 10.6A 3-Pin(3+Tab) TO-262 Tube

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO262-3-3, RoHS

***nell: MOSFET,N CH,600V,10.6A,TO262; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.34ohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-262; No. of Pins:3; Current Id Max:10.6A; Power Dissipation Pd:83W; Voltage Vgs Max:30V

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS

***ical: Trans MOSFET N-CH 100V 61A 3-Pin(3+Tab) TO-262 Tube

*** Electronic Components: MOSFET MOSFET, 100V, 64A, 1 50 nC Qg, TO-262

***i-Key Marketplace: IRFSL451 - HEXFET N-CHANNEL POWE

***nell: MOSFET N CH 100V, 61A, TO262; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0113ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:140W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-262; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

***emi: PowerTrench® MOSFET, N-Channel, 100V, 57A, 16mΩ

***r Electronics: Power Field-Effect Transistor, 57A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***emi: N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, I2PAK

***ure Electronics: Single N-Channel 600 V 0.6 Ohm 30 nC 83 W Silicon Through Hole Mosfet - TO-262

***nell: MOSFET, N CH, 600V, 7A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-262; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Market price

Part #	Mfg.	Description	Stock	Price
IRL520NLPBF DISTI # 70018548	Infineon Technologies AG	MOSFET,100V,10A,180 MOHM,13.3 NC QG,LOGIC LEVEL,TO-262 RoHS: Compliant	0	700:$0.6300
IRL520NLPBF	International Rectifier	RoHS: Compliant	Europe - 900

Image	Part #	Description
	Mfr.#: IRL520NPBF OMO.#: OMO-IRL520NPBF	MOSFET MOSFT 10A 13.3nC 180mOhm LogLvAB
	Mfr.#: IRL520NSTRR OMO.#: OMO-IRL520NSTRR-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 10A D2PAK
	Mfr.#: IRL520STRR OMO.#: OMO-IRL520STRR-VISHAY	MOSFET N-CH 100V 9.2A D2PAK
	Mfr.#: IRL520NSPBF OMO.#: OMO-IRL520NSPBF-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET 100V 1 N-CH HEXFET 180mOhms 13.3nC
	Mfr.#: IRL520 OMO.#: OMO-IRL520-VISHAY	MOSFET N-CH 100V 9.2A TO-220AB
	Mfr.#: IRL520L OMO.#: OMO-IRL520L-VISHAY	MOSFET N-CH 100V 9.2A TO-262
	Mfr.#: IRL520NL OMO.#: OMO-IRL520NL-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 10A TO-262
	Mfr.#: IRL520NLPBF OMO.#: OMO-IRL520NLPBF-1190	MOSFET, 100V, 10A, 180 MOHM, 13.3 NC QG, LOGIC LEVEL, TO-262
	Mfr.#: IRL520NSTRRPBF OMO.#: OMO-IRL520NSTRRPBF-1190	New and Original
	Mfr.#: IRL520PDF OMO.#: OMO-IRL520PDF-1190	New and Original

IRL520NLPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes