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IRL520NPBF

IRL520NPBF
Mfr. #:
IRL520NPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 10A 13.3nC 180mOhm LogLvAB
Lifecycle:
New from this manufacturer.
Datasheet:
IRL520NPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRL520NPBF DatasheetIRL520NPBF Datasheet (P4-P6)IRL520NPBF Datasheet (P7-P9)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
10 A
Rds On - Drain-Source Resistance:
180 mOhms
Vgs - Gate-Source Voltage:
16 V
Qg - Gate Charge:
13.3 nC
Pd - Power Dissipation:
48 W
Configuration:
Single
Packaging:
Tube
Height:
15.65 mm
Length:
10 mm
Transistor Type:
1 N-Channel
Width:
4.4 mm
Brand:
Infineon Technologies
Product Type:
MOSFET
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Part # Aliases:
SP001558080
Unit Weight:
0.211644 oz
Tags
IRL520N, IRL52, IRL5, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.18Ohm;ID 10A;TO-220AB;PD 48W;VGS +/-16V
***el Electronic
In a Tube of 50, IRL520NPBF N-Channel MOSFET, 10 A, 100 V LogicFET, 3-Pin TO-220AB Infineon
***ure Electronics
Single N-Channel 100 V 0.22 Ohm 20 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 60 W
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:100V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:10A; Package / Case:TO-220AB; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:35A; SMD Marking:IRL520NPBF; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V
***emi
N-Channel Power MOSFET, Logic Level, QFET®, 100 V, 12.8 A, 180 mΩ, TO-220
***et
Trans MOSFET N-CH 100V 12.8A 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
N-Channel 100 V 0.18 Ohm Through Hole Mosfet - TO-220
*** Stop Electro
Power Field-Effect Transistor, 12.8A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 100V, 12.8A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 12.8A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.; Available until stocks are exhausted Alternative available
***ment14 APAC
MOSFET, N CH, 100V, 12.8A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:12.8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.142ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:65W; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (07-Jul-2017)
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ical
Trans MOSFET N-CH 100V 11A Automotive 3-Pin(3+Tab) TO-220AB Rail
***ponent Stockers USA
11 A 100 V 0.2 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***el Electronic
IC MPU SUPERVISORY 4.55V SOT23
***peria
N-channel TrenchMOS logic level FET
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.2Ohm;ID 9.7A;TO-220AB;PD 48W;VGS +/-20V
***ure Electronics
Single N-Channel 100 V 0.2 Ohm 25 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop
Trans MOSFET N-CH Si 100V 9.7A 3-Pin(3+Tab) TO-220AB Tube
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:9.7A; Current Temperature:25°C; Device Marking:IRF520N; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:47W; Power Dissipation Pd:47W; Pulse Current Idm:38A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***eco
Transistor RFP12N10L MOSFET N-Channel 100 Volt 12 Amp TO-220
***p One Stop Global
Trans MOSFET N-CH Si 100V 12A Automotive 3-Pin(3+Tab) TO-220AB Rail
***emi
N-Channel Logic Level Power MOSFET 100V, 12A, 200mΩ
***nell
TRANSISTOR, MOSFET, N, 100V, 12A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V
***r Electronics
Power Field-Effect Transistor, 12A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09526.
***ure Electronics
Single N-Channel 100 V 0.27 Ohms Flange Mount Power Mosfet - TO-220-3
***enic
100V 9.2A 270m´Î@5V5.5A 60W 2V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***ment14 APAC
MOSFET, N, LOGIC, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9.2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):270mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.2A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulse Current Idm:31A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
***emi
N-Channel Power MOSFET, QFET®, 100 V, 12.8 A, 180 mΩ, TO-220
***et
Trans MOSFET N-CH 100V 12.8A 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
N-Channel 00 V 0.18 Ohm Through Hole Mosfet - TO-220
***nell
MOSFET, N-CH, 100V, 12.8A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 12.8A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.; Available until stocks are exhausted Alternative available
***r Electronics
Power Field-Effect Transistor, 12.8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Part # Mfg. Description Stock Price
IRL520NPBF
DISTI # 26943215		Infineon Technologies AGTrans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		12920
  • 1750:$0.2832
  • 300:$0.3120
  • 40:$0.3312
IRL520NPBF
DISTI # 31234203		Infineon Technologies AGTrans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		100
  • 100:$0.5062
  • 50:$0.5725
  • 31:$0.7892
IRL520NPBF
DISTI # IRL520NPBF-ND		Infineon Technologies AGMOSFET N-CH 100V 10A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		7229In Stock
  • 1000:$0.4784
  • 500:$0.5928
  • 100:$0.7501
  • 50:$0.8502
  • 1:$1.0500
IRL520NPBF
DISTI # C1S322000501669		Infineon Technologies AGTrans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		100
  • 100:$0.3970
  • 50:$0.4490
  • 10:$0.6190
  • 5:$0.6630
IRL520NPBF
DISTI # IRL520NPBF		Infineon Technologies AGTrans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-220AB (Alt: IRL520NPBF)
RoHS: Compliant
Min Qty: 1000		Asia - 5000
  • 1000:$0.2925
  • 2000:$0.2805
  • 3000:$0.2767
  • 5000:$0.2659
  • 10000:$0.2625
  • 25000:$0.2559
  • 50000:$0.2497
IRL520NPBF
DISTI # SP001558080		Infineon Technologies AGTrans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-220AB (Alt: SP001558080)
RoHS: Compliant
Min Qty: 1		Europe - 2415
  • 1:€0.3999
  • 10:€0.3989
  • 25:€0.3979
  • 50:€0.3969
  • 100:€0.3959
  • 500:€0.3949
  • 1000:€0.3339
IRL520NPBF
DISTI # IRL520NPBF		Infineon Technologies AGTrans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRL520NPBF)
RoHS: Compliant
Min Qty: 1250
Container: Tube		Americas - 0
  • 1250:$0.2989
  • 1350:$0.2879
  • 2600:$0.2779
  • 6250:$0.2689
  • 12500:$0.2639
IRL520NPBF
DISTI # 97K2386		Infineon Technologies AGMOSFET, N, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:10A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.18ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:48W,RoHS Compliant: Yes235
  • 1:$0.9390
  • 10:$0.8040
  • 100:$0.6310
  • 500:$0.5640
  • 1000:$0.4570
  • 2500:$0.4110
  • 10000:$0.3980
IRL520NPBF
DISTI # 70017091		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 0.18Ohm,ID 10A,TO-220AB,PD 48W,VGS +/-16V
RoHS: Compliant		452
  • 1:$1.4800
  • 10:$1.3000
  • 100:$1.1400
  • 500:$0.9900
  • 1000:$0.8700
IRL520NPBFInfineon Technologies AGSingle N-Channel 100 V 0.22 Ohm 20 nC HEXFET Power Mosfet - TO-220-3
RoHS: Compliant		12160Tube
  • 25:$0.4150
  • 300:$0.3800
  • 1750:$0.3250
IRL520NPBF
DISTI # 942-IRL520NPBF		Infineon Technologies AGMOSFET MOSFT 10A 13.3nC 180mOhm LogLvAB
RoHS: Compliant		5829
  • 1:$0.8600
  • 10:$0.7280
  • 100:$0.5600
  • 500:$0.4950
  • 1000:$0.3900
IRL520NPBF
DISTI # 9194870		Infineon Technologies AGMOSFET N-CH 100V 10A LOGICFET TO220AB, TU650
  • 50:£0.5620
  • 250:£0.4690
  • 1000:£0.3750
  • 2500:£0.3150
IRL520NPBF
DISTI # 5411196		Infineon Technologies AGMOSFET N-CH 100V 10A LOGICFET TO220AB, EA4686
  • 1:£2.0000
  • 20:£0.5800
  • 25:£0.5300
IRL520NPBFInternational Rectifier10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB24
  • 14:$0.7460
  • 4:$1.1190
  • 1:$1.4920
IRL520NPBF
DISTI # IRL520NPBF		Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,10A,48W,TO220AB414
  • 1:$0.6454
  • 3:$0.4883
  • 10:$0.4086
  • 50:$0.3506
IRL520NPBFInternational Rectifier 
RoHS: Compliant		Europe - 235
    IRL520NPBF
    DISTI # IRL520NPBF    		Infineon Technologies AGN-LogL 100V 10A 48W 0,18R TO220AB
    RoHS: Compliant    		130
    • 10:€0.5330
    • 50:€0.2930
    • 200:€0.2330
    • 500:€0.2240
    IRL520NPBF
    DISTI # TMOSP12567    		Infineon Technologies AGN-CH 100V 10A 180mOhm TO220-3
    RoHS: Compliant    		Stock DE - 400Stock US - 0
    • 50:$0.4170
    • 150:$0.3932
    • 350:$0.3694
    • 800:$0.3336
    • 2000:$0.3217
    IRL520NPBFInternational RectifierINSTOCK24000
      IRL520NPBF
      DISTI # XSFP00000002724      		Infineon Technologies AGPower Field-Effect Transistor, 55AI(D),100V,0.03ohm, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET
      RoHS: Compliant      		8520
      • 250:$0.8300
      • 8520:$0.7545
      IRL520NPBF
      DISTI # 1013499      		Infineon Technologies AGMOSFET, N, TO-220
      RoHS: Compliant      		250
      • 5:£0.5970
      • 25:£0.5460
      • 100:£0.4370
      • 250:£0.4120
      • 500:£0.3860
      IRL520NPBF
      DISTI # 1013499      		Infineon Technologies AGMOSFET, N, TO-220
      RoHS: Compliant      		220
      • 1:$1.3700
      • 10:$1.1600
      • 100:$0.8870
      • 500:$0.7840
      • 1000:$0.6180
      • 2500:$0.5480
      • 10000:$0.5280
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      Availability
      Stock:
      Available
      On Order:
      1987
      Enter Quantity:
      Current price of IRL520NPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.85
      $0.85
      10
      $0.73
      $7.28
      100
      $0.56
      $56.00
      500
      $0.50
      $247.50
      1000
      $0.39
      $390.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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