TSM9NB50CI C0G

Product Attribute

Attribute Value

Manufacturer:

Taiwan Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

ITO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

500 V

Id - Continuous Drain Current:

9 A

Rds On - Drain-Source Resistance:

720 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.5 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

44 nC

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

-

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

1 N-Channel

Brand:

Taiwan Semiconductor

Fall Time:

5.7 ns

Product Type:

MOSFET

Rise Time:

46.8 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

13.3 ns

Typical Turn-On Delay Time:

27.4 ns

Tags

TSM9NB, TSM9N, TSM9, TSM