SI4952DY-T1-GE3

SI4952DY-T1-GE3
Mfr. #:
SI4952DY-T1-GE3
Manufacturer:
Vishay
Description:
RF Bipolar Transistors MOSFET Dual N-Ch MOSFET 25V 23mohm @ 10V
Lifecycle:
New from this manufacturer.
Datasheet:
SI4952DY-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
Vishay Siliconix
Product Category
FETs - Arrays
Series
TrenchFETR
Packaging
Digi-ReelR Alternate Packaging
Part-Aliases
SI4952DY-GE3
Unit-Weight
0.006596 oz
Mounting-Style
SMD/SMT
Package-Case
8-SOIC (0.154", 3.90mm Width)
Technology
Si
Operating-Temperature
-55°C ~ 150°C (TJ)
Mounting-Type
Surface Mount
Number-of-Channels
2 Channel
Supplier-Device-Package
8-SO
Configuration
Dual
FET-Type
2 N-Channel (Dual)
Power-Max
2.8W
Transistor-Type
2 N-Channel
Drain-to-Source-Voltage-Vdss
25V
Input-Capacitance-Ciss-Vds
680pF @ 13V
FET-Feature
Logic Level Gate
Current-Continuous-Drain-Id-25°C
8A
Rds-On-Max-Id-Vgs
23 mOhm @ 7A, 10V
Vgs-th-Max-Id
2.2V @ 250μA
Gate-Charge-Qg-Vgs
18nC @ 10V
Pd-Power-Dissipation
1.8 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
50 ns
Rise-Time
50 ns
Vgs-Gate-Source-Voltage
16 V
Id-Continuous-Drain-Current
7 A
Vds-Drain-Source-Breakdown-Voltage
25 V
Rds-On-Drain-Source-Resistance
23 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
20 ns
Typical-Turn-On-Delay-Time
15 ns
Channel-Mode
Enhancement
Tags
SI4952DY-T, SI4952D, SI4952, SI495, SI49, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
SI4952DY-T1-GE3
DISTI # SI4952DY-T1-GE3TR-ND
Vishay SiliconixMOSFET 2N-CH 25V 8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    SI4952DY-T1-GE3
    DISTI # 781-SI4952DY-T1-GE3
    Vishay IntertechnologiesMOSFET Dual N-Ch MOSFET 25V 23mohm @ 10V
    RoHS: Compliant
    0
      Image Part # Description
      SI4952DY-T1-GE3

      Mfr.#: SI4952DY-T1-GE3

      OMO.#: OMO-SI4952DY-T1-GE3

      MOSFET RECOMMENDED ALT 781-SI4214DDY-GE3
      SI4952DY-T1-E3

      Mfr.#: SI4952DY-T1-E3

      OMO.#: OMO-SI4952DY-T1-E3

      MOSFET RECOMMENDED ALT 781-SI4214DDY-GE3
      SI4952DY-T1-E3

      Mfr.#: SI4952DY-T1-E3

      OMO.#: OMO-SI4952DY-T1-E3-VISHAY

      RF Bipolar Transistors MOSFET 25V 8.0A 2.8W
      SI4952DY-T1-GE3

      Mfr.#: SI4952DY-T1-GE3

      OMO.#: OMO-SI4952DY-T1-GE3-VISHAY

      RF Bipolar Transistors MOSFET Dual N-Ch MOSFET 25V 23mohm @ 10V
      SI4952DY

      Mfr.#: SI4952DY

      OMO.#: OMO-SI4952DY-1190

      New and Original
      SI4952DY-T1

      Mfr.#: SI4952DY-T1

      OMO.#: OMO-SI4952DY-T1-1190

      New and Original
      Availability
      Stock:
      Available
      On Order:
      3500
      Enter Quantity:
      Current price of SI4952DY-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.00
      $0.00
      10
      $0.00
      $0.00
      100
      $0.00
      $0.00
      500
      $0.00
      $0.00
      1000
      $0.00
      $0.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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